IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
UP-0359367
(2009-01-26)
|
등록번호 |
US-7858495
(2011-02-24)
|
우선권정보 |
JP-2008-024608(2008-02-04) |
발명자
/ 주소 |
- Ohnuma, Hideto
- Yamazaki, Shunpei
|
출원인 / 주소 |
- Semiconductor Energy Laboratory Co., Ltd.
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
7 인용 특허 :
5 |
초록
▼
A method for manufacturing an SOI substrate is provided in which adhesiveness between a single crystal semiconductor substrate and a semiconductor substrate is improved; bonding defects are reduced; and sufficient bonding strength is provided in a bonding step and also in a process of manufacturing
A method for manufacturing an SOI substrate is provided in which adhesiveness between a single crystal semiconductor substrate and a semiconductor substrate is improved; bonding defects are reduced; and sufficient bonding strength is provided in a bonding step and also in a process of manufacturing a semiconductor device. An insulating film including halogen is formed on a single crystal semiconductor substrate side in which an embrittlement layer is formed. The insulating film including halogen undergoes a plasma treatment. The insulating film including halogen and a face of a semiconductor substrate are bonded so as to face each other. A thermal treatment is performed to split the single crystal semiconductor substrate along the embrittlement layer, thereby separating the single crystal semiconductor substrate into a single crystal semiconductor substrate and the semiconductor substrate to which a single crystal semiconductor layer is bonded. The single crystal semiconductor layer bonded to the semiconductor substrate undergoes a planarization treatment.
대표청구항
▼
What is claimed is: 1. A method for manufacturing an SOI substrate, comprising: forming an insulating film including halogen on a surface of a single crystal semiconductor substrate by performing a thermal oxidation treatment in an atmosphere including halogen; forming an embrittlement layer in the
What is claimed is: 1. A method for manufacturing an SOI substrate, comprising: forming an insulating film including halogen on a surface of a single crystal semiconductor substrate by performing a thermal oxidation treatment in an atmosphere including halogen; forming an embrittlement layer in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with ions through the insulating film including halogen; performing a plasma treatment on the insulating film including halogen by applying a bias voltage to the insulating film including halogen; bonding the insulating film including halogen and a face of a semiconductor substrate with each other; splitting the single crystal semiconductor substrate along the embrittlement layer, whereby a single crystal semiconductor layer is bonded to the semiconductor substrate; and performing a planarization treatment on the single crystal semiconductor layer bonded to the semiconductor substrate. 2. The method for manufacturing an SOI substrate according to claim 1, wherein a hydrogen gas is used for forming the embrittlement layer, and wherein the hydrogen gas is excited to produce plasma including H3+, and ions included in the plasma are accelerated to irradiate the single crystal semiconductor substrate with the ions, whereby the embrittlement layer is formed. 3. The method for manufacturing an SOI substrate according to claim 1, wherein the insulating film including halogen comprises silicon oxide. 4. The method for manufacturing an SOI substrate according to claim 1, wherein the halogen is at a concentration from 1×1016 atoms/cm3 to 2×1021 atoms/cm3, inclusive. 5. The method for manufacturing an SOI substrate according to claim 1, wherein the halogen is chlorine. 6. The method for manufacturing an SOI substrate according to claim 1, wherein oxygen is used as a gas used for the plasma treatment. 7. The method for manufacturing an SOI substrate according to claim 1, wherein the semiconductor substrate is a single crystal silicon substrate, a polycrystalline silicon substrate, or a solar-grade silicon substrate. 8. The method for manufacturing an SOI substrate according to claim 1, wherein the SOI substrate is incorporated in one selected from the group consisting of a phone, a camera, a game machine, and an audio reproducing device. 9. A method for manufacturing an SOI substrate, comprising: forming an embrittlement layer in a single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with ions; forming an insulating film including halogen on a surface of a semiconductor substrate by performing a thermal oxidation treatment in an atmosphere including halogen; performing a plasma treatment on the insulating film including halogen by applying a bias voltage to the insulating film including halogen; bonding the insulating film including halogen and a face of the single crystal semiconductor substrate with each other; splitting the single crystal semiconductor substrate along the embrittlement layer, whereby a single crystal semiconductor layer is bonded to the semiconductor substrate; and performing a planarization treatment on the single crystal semiconductor layer bonded to the semiconductor substrate. 10. The method for manufacturing an SOI substrate according to claim 9, wherein a hydrogen gas is used for forming the embrittlement layer, and wherein the hydrogen gas is excited to produce plasma including H3+, and ions included in the plasma are accelerated to irradiate the single crystal semiconductor substrate with the ions, whereby the embrittlement layer is formed. 11. The method for manufacturing an SOI substrate according to claim 9, wherein the insulating film including halogen comprises silicon oxide. 12. The method for manufacturing an SOI substrate according to claim 9, wherein the halogen is at a concentration from 1×1016 atoms/cm3 to 2×1021 atoms/cm3, inclusive. 13. The method for manufacturing an SOI substrate according to claim 9, wherein the halogen is chlorine. 14. The method for manufacturing an SOI substrate according to claim 9, wherein oxygen is used as a gas used for the plasma treatment. 15. The method for manufacturing an SOI substrate according to claim 9, wherein the semiconductor substrate is a single crystal silicon substrate, a polycrystalline silicon substrate, or a solar-grade silicon substrate. 16. The method for manufacturing an SOI substrate according to claim 9, wherein the SOI substrate is incorporated in one selected from the group consisting of a phone, a camera, a game machine, and an audio reproducing device. 17. A method for manufacturing an SOI substrate, comprising: forming an insulating film including halogen on a surface of a single crystal semiconductor substrate by performing a thermal oxidation treatment in an atmosphere including halogen; forming an embrittlement layer in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with ions through the insulating film including halogen; performing a plasma treatment on the insulating film including halogen by applying a bias voltage to the insulating film including halogen; forming an insulating film on a surface of a semiconductor substrate by performing a thermal oxidation treatment on the surface of the semiconductor substrate; bonding the insulating film including halogen and a face of the insulating film with each other; splitting the single crystal semiconductor substrate along the embrittlement layer, whereby a single crystal semiconductor layer is bonded to the semiconductor substrate; and performing a planarization treatment on the single crystal semiconductor layer bonded to the semiconductor substrate. 18. The method for manufacturing an SOI substrate according to claim 17, wherein a hydrogen gas is used for forming the embrittlement layer, and wherein the hydrogen gas is excited to produce plasma including H3+, and ions included in the plasma are accelerated to irradiate the single crystal semiconductor substrate with the ions, whereby the embrittlement layer is formed. 19. The method for manufacturing an SOI substrate according to claim 17, wherein the insulating film including halogen comprises silicon oxide. 20. The method for manufacturing an SOI substrate according to claim 17, wherein the halogen is at a concentration from 1×1016 atoms/cm3 to 2×1021 atoms/cm3, inclusive. 21. The method for manufacturing an SOI substrate according to claim 17, wherein the halogen is chlorine. 22. The method for manufacturing an SOI substrate according to claim 17, wherein oxygen is used as a gas used for the plasma treatment. 23. The method for manufacturing an SOI substrate according to claim 17, wherein the semiconductor substrate is a single crystal silicon substrate, a polycrystalline silicon substrate, or a solar-grade silicon substrate. 24. The method for manufacturing an SOI substrate according to claim 17, wherein the SOI substrate is incorporated in one selected from the group consisting of a phone, a camera, a game machine, and an audio reproducing device. 25. A method for manufacturing an SOI substrate, comprising: forming an insulating film on a surface of a single crystal semiconductor substrate by performing a thermal oxidation treatment on the single crystal semiconductor substrate; forming an embrittlement layer in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with ions through the insulating film; forming an insulating film including halogen on a surface of a semiconductor substrate by performing a thermal oxidation treatment in an atmosphere including halogen; performing a plasma treatment on the insulating film including halogen by applying a bias voltage to the insulating film including halogen; bonding the insulating film including halogen and a face of the insulating film with each other; splitting the single crystal semiconductor substrate along the embrittlement layer, whereby a single crystal semiconductor layer is bonded to the semiconductor substrate; and performing a planarization treatment on the single crystal semiconductor layer bonded to the semiconductor substrate. 26. The method for manufacturing an SOI substrate according to claim 25, wherein a hydrogen gas is used for forming the embrittlement layer, and wherein the hydrogen gas is excited to produce plasma including H3+, and ions included in the plasma are accelerated to irradiate the single crystal semiconductor substrate with the ions, whereby the embrittlement layer is formed. 27. The method for manufacturing an SOI substrate according to claim 25, wherein the insulating film including halogen comprises silicon oxide. 28. The method for manufacturing an SOI substrate according to claim 25, wherein the halogen is at a concentration from 1×1016 atoms/cm3 to 2×1021 atoms/cm3, inclusive. 29. The method for manufacturing an SOI substrate according to claim 25, wherein the halogen is chlorine. 30. The method for manufacturing an SOI substrate according to claim 25, wherein oxygen is used as a gas used for the plasma treatment. 31. The method for manufacturing an SOI substrate according to claim 25, wherein the semiconductor substrate is a single crystal silicon substrate, a polycrystalline silicon substrate, or a solar-grade silicon substrate. 32. The method for manufacturing an SOI substrate according to claim 25, wherein the SOI substrate is incorporated in one selected from the group consisting of a phone, a camera, a game machine, and an audio reproducing device. 33. A method for manufacturing an SOI substrate, comprising: forming a first insulating film on a surface of a single crystal semiconductor substrate by performing a thermal oxidation treatment; forming an embrittlement layer in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with ions through the first insulating film; forming a second insulating film on the first insulating film; performing a plasma treatment on the second insulating film by applying a bias voltage to the second insulating film; forming a third insulating film including halogen on a surface of a semiconductor substrate by performing a thermal oxidation treatment in an atmosphere including halogen; bonding the third insulating film including halogen and a face of the second insulating film with each other; splitting the single crystal semiconductor substrate along the embrittlement layer, whereby a single crystal semiconductor layer is bonded to the semiconductor substrate; and performing a planarization treatment on the single crystal semiconductor layer bonded to the semiconductor substrate. 34. The method for manufacturing an SOI substrate according to claim 33, wherein a hydrogen gas is used for forming the embrittlement layer, and wherein the hydrogen gas is excited to produce plasma including H3+, and ions included in the plasma are accelerated to irradiate the single crystal semiconductor substrate with the ions, whereby the embrittlement layer is formed. 35. The method for manufacturing an SOI substrate according to claim 33, wherein the third insulating film including halogen comprises silicon oxide. 36. The method for manufacturing an SOI substrate according to claim 33, wherein the halogen is at a concentration from 1×1016 atoms/cm3 to 2×1021 atoms/cm3, inclusive. 37. The method for manufacturing an SOI substrate according to claim 33, wherein the halogen is chlorine. 38. The method for manufacturing an SOI substrate according to claim 33, wherein oxygen is used as a gas used for the plasma treatment. 39. The method for manufacturing an SOI substrate according to claim 33, wherein the semiconductor substrate is a single crystal silicon substrate, a polycrystalline silicon substrate, or a solar-grade silicon substrate. 40. The method for manufacturing an SOI substrate according to claim 33, wherein the SOI substrate is incorporated in one selected from the group consisting of a phone, a camera, a game machine, and an audio reproducing device.
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