초록 ▼

A photovoltaic cell device, e.g., solar cell, solar panel, and method of manufacture. The device has an optically transparent substrate comprises a first surface and a second surface. A first thickness of material (e.g., semiconductor material, single crystal material) having a first surface region

A photovoltaic cell device, e.g., solar cell, solar panel, and method of manufacture. The device has an optically transparent substrate comprises a first surface and a second surface. A first thickness of material (e.g., semiconductor material, single crystal material) having a first surface region and a second surface region is included. In a preferred embodiment, the surface region is overlying the first surface of the optically transparent substrate. The device has an optical coupling material provided between the first surface region of the thickness of material and the first surface of the optically transparent material. A second thickness of semiconductor material is overlying the second surface region to form a resulting thickness of semiconductor material.

대표청구항 ▼

What is claimed is: 1. A method of fabricating substrates for photovoltaic materials, the method comprising:providing a donor substrate, the donor substrate including a cleave region, a surface region, and a first thickness of silicon or germanium material defined between the cleave region and the s

What is claimed is: 1. A method of fabricating substrates for photovoltaic materials, the method comprising:providing a donor substrate, the donor substrate including a cleave region, a surface region, and a first thickness of silicon or germanium material defined between the cleave region and the surface region;transferring the first thickness of silicon or germanium material to a handle substrate surface region of a handle substrate to detach a portion of the donor substrate within a vicinity of the cleave region and to couple the surface region to the handle substrate surface region of the handle substrate to cause formation of a cleaved surface region overlying the first thickness of silicon or germanium material;supplying a gas including a silane and/or germane species into a reaction chamber;depositing material, using a process selected from at least glow discharge, plasma, photo-enhanced or thermal CVD and the silane and/or germane species, overlying the cleaved surface to thicken the first thickness of silicon or germanium material at a deposition rate equal to or greater than or less than a solid phase epitaxial re-growth rate of the material to crystallize the material overlying the first thickness of silicon or germanium material; and the method further comprising simultaneously depositing a second silicon material on a backside region of the handle substrate to form a first photovoltaic region on the handle substrate surface region and the backside of the handle substrate to respectively form a first photovoltaic material on the handle substrate surface region and a second photovoltaic material on the backside of the handle substrate.