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Provided are a semiconductor chip, a method of fabricating a semiconductor chip, and a semiconductor chip stack package. The semiconductor chip includes a semiconductor substrate and a semiconductor device on the semiconductor substrate. A dielectric covers the semiconductor device. A top metal is o

Provided are a semiconductor chip, a method of fabricating a semiconductor chip, and a semiconductor chip stack package. The semiconductor chip includes a semiconductor substrate and a semiconductor device on the semiconductor substrate. A dielectric covers the semiconductor device. A top metal is on the dielectric and electrically connected to the semiconductor device. A deep via penetrates the semiconductor substrate and the dielectric. An interconnection connects the deep via and the top metal electrically. A bump is in contact with the top metal and the interconnection.

대표청구항 ▼

What is claimed is: 1. A semiconductor chip comprising:a semiconductor substrate;a semiconductor device on the semiconductor substrate;a dielectric covering the semiconductor device;a top metal on the dielectric and electrically connected to the semiconductor device;a deep via passing through the se

What is claimed is: 1. A semiconductor chip comprising:a semiconductor substrate;a semiconductor device on the semiconductor substrate;a dielectric covering the semiconductor device;a top metal on the dielectric and electrically connected to the semiconductor device;a deep via passing through the semiconductor substrate and the dielectric;an interconnection electrically connecting the deep via and the top metal, wherein the interconnection directly contacts a first part of an upper surface of the top metal; anda bump in contact with the top metal and the interconnection, wherein the bump directly contacts a second part of the upper surface of the top metal and an upper surface of the interconnection.