초록 ▼

The formation of bonding pad protective layer over exposed bonding pad materials between stacked integrated circuit (IC) dies or wafers is described in preferred embodiments in which the bonding pad protective layer is formed in the integrated process of forming wafer bonding pads. The bonding pad p

The formation of bonding pad protective layer over exposed bonding pad materials between stacked integrated circuit (IC) dies or wafers is described in preferred embodiments in which the bonding pad protective layer is formed in the integrated process of forming wafer bonding pads. The bonding pad protective layer prevents the exposed bonding pad materials from oxidation and corrosion in open-air or other harsh environments. By providing a bonding pad protective layer on exposed bonding pad materials, significant product reliability improvement is expected on ICs having a three-dimensional “stacked-die” configuration.

대표청구항 ▼

What is claimed is: 1. A stacked integrated circuit (IC) comprising:a first semiconductor die having a front side and a back side, wherein said first semiconductor die comprises one or more first devices;a first insulation layer on said front side of said first semiconductor die;one or more first bo

What is claimed is: 1. A stacked integrated circuit (IC) comprising:a first semiconductor die having a front side and a back side, wherein said first semiconductor die comprises one or more first devices;a first insulation layer on said front side of said first semiconductor die;one or more first bonding pads disposed on the insulation layer and electrically connected to respective said one or more first devices, wherein each of the one or more first bonding pads has a bonding surface and a perimeter surface;a second semiconductor die bonded to said first semiconductor die at said bonding surface of the one or more first bonding pads; anda conductive protective layer disposed on the perimeter surface of each of the one or more bonding pads in a gap between said insulation layer and said second semiconductor die.