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Quantum tunneling devices and circuits with lattice-mismatched semiconductor structures 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-029/30
출원번호 US-0862850 (2007-09-27)
등록번호 US7875958 (2011-01-10)
발명자 / 주소
  • Cheng, Zhiyuan
  • Sheen, Calvin
출원인 / 주소
  • Taiwan Semiconductor Manufacturing Company, Ltd.
대리인 / 주소
    Slater & Matsil, L.L.P.
인용정보 피인용 횟수 : 67  인용 특허 : 148

초록

Structures include a tunneling device disposed over first and second lattice-mismatched semiconductor materials. Process embodiments include forming tunneling devices over lattice-mismatched materials.

대표청구항 ▼

What is claimed is: 1. A structure comprising:a non-crystalline material defining an opening having a sidewall disposed above a surface of a substrate, the substrate comprising a first crystalline semiconductor material;a second crystalline semiconductor material disposed in the opening, the second

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