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Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-029/786
출원번호 US-0833855 (2010-07-09)
등록번호 US7956361 (2011-05-23)
우선권정보 JP-2005-005-258263(2005-09-06)
발명자 / 주소
  • Iwasaki, Tatsuya
출원인 / 주소
  • Canon Kabushiki Kaisha
대리인 / 주소
    Fitzpatrick, Cella, Harper & Scinto
인용정보 피인용 횟수 : 186  인용 특허 : 0

초록

An amorphous oxide containing hydrogen (or deuterium) is applied to a channel layer of a transistor. Accordingly, a thin film transistor having superior TFT properties can be realized, the superior TFT properties including a small hysteresis, normally OFF operation, a high ON/OFF ratio, a high satur

대표청구항

The invention claimed is: 1. A field effect transistor comprising:a channel layer of an amorphous oxide film containing In and Zn,wherein the amorphous oxide film shows an electron carrier concentration and an electron mobility such that the electron mobility tends to increase as the electron carrie

이 특허를 인용한 특허 (186)

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