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Inductively-coupled plasma source 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H05B-031/26
출원번호 US-0639680 (2006-12-15)
등록번호 US7969096 (2011-06-15)
발명자 / 주소
  • Chen, Xing
출원인 / 주소
  • MKS Instruments, Inc.
대리인 / 주소
    Proskauer Rose LLP
인용정보 피인용 횟수 : 16  인용 특허 : 37

초록

A method and apparatus for exciting gas that involves generating an alternating magnetic field unidirectionally through a magnetic core defining a gap, across the gap and through a plasma vessel that includes dielectric material. The magnetic field induces an electric field in the plasma vessel that

대표청구항

What is claimed is: 1. An inductively-coupled plasma source for exciting gases comprising:a. a plasma vessel comprising a dielectric material; andb. a transformer comprising a magnetic core defining a gap that generates an alternating magnetic field unidirectionally through the core, across the gap

이 특허에 인용된 특허 (37)

  1. Powell, Ronald Allan; Font-Rodriguez, Gabriel I.; Selitser, Simon; Settles, Emerson Derryck, Apparatus and method for injecting and modifying gas concentration of a meta-stable or atomic species in a downstream plasma reactor.
  2. Mavretic Anton (Marlton NJ) Ciszek Andrew (Maple Shade NJ) Stach Joseph (Medford NJ), Apparatus for matching a variable load impedance with an RF power generator impedance.
  3. Awakowicz Peter,DEX ; Frost Robert,DEX, Arrangement and process for sterilizing containers by means of low-pressure plasma.
  4. Patrick Roger (Santa Clara CA) Bose Frank (Wettingen CA CHX) Schoenborn Philippe (San Jose CA) Toda Harry (Santa Clara CA), Coil configurations for improved uniformity in inductively coupled plasma systems.
  5. Willi Neff BE; Klaus Pochner DE; Franz-Josef Trompeter DE; Jens Kamp DE, Device and method for treating flowing gases, in particular exhaust gases.
  6. Balish Kenneth E. ; Nowak Thomas ; Tanaka Tsutomu ; Beals Mark, Dilute remote plasma clean.
  7. Gorin Georges J., Downstream plasma using oxygen gas mixtures.
  8. Godyak Valery A. ; Alexandrovich Benjamin ; Piejak Robert B. ; Statnic Eugene,DEX, High intensity electrodeless low pressure light source driven by a transformer core arrangement.
  9. Claes Bjorkman ; Hongching Shan ; Michael Welch, High selectivity etch using an external plasma discharge.
  10. Fujimura Shuzo,JPX ; Ogawa Hiroki,JPX ; Kikuchi Jun,JPX, Hydrogen plasma downstream treatment equipment and hydrogen plasma downstream treatment method.
  11. Kikuchi Jun (Kawasaki JPX), Hydrogen radical processing.
  12. Evgeny V. Shun'ko, Inductive RF plasma source with external discharge bridge.
  13. Reinberg Alan R. (Westport CT) Steinberg George N. (Westport CT) Zarowin Charles B. (Rowayton CT), Inductively coupled discharge for plasma etching and resist stripping.
  14. Choi, Dae-Kyu, Inductively coupled plasma source with conductive layer and process of plasma generation.
  15. Chen, Xing; Holber, William M.; Cowe, Andrew Barnett; Georgelis, Eric; Bystyak, Ilya M.; Bortkiewicz, Andrzej, Inductively-coupled toroidal plasma source.
  16. Leung, Ka-Ngo; Ji, Qing; Wilde, Stephen, Ion source with external RF antenna.
  17. De Reuver Johannes L. (Nijmegen NLX), Magnetic filter.
  18. Gerald Yin ; Peter Loewenhardt ; Arnold Kholodenko ; Hong Chin Shan ; Chii Lee ; Dan Katz, Magnetically enhanced inductively coupled plasma reactor with magnetically confined plasma.
  19. Colpo, Pascal; Rossi, Fran.cedilla.ois, Method and apparatus for inductively coupled plasma treatment.
  20. Robbins Roger A. (Allen TX) Brown Donald E. (Bedford TX) Buck David W. (Mesquite TX) Rose Alan D. (Wylie TX), Method and apparatus for reducing etching erosion in a plasma containment tube.
  21. Moslehi Mehrdad M. (Dallas TX), Method and apparatus for time-division plasma chopping in a multi-channel plasma processing equipment.
  22. Konkola Seppo T. (Varastotie 11 Jamsa FIX FIN-42100 ), Method for generating and exploiting a plasma ball or a similar phenomenon in a chamber and the chamber.
  23. Min,Young Min; Choi,Dae Kyu; Bae,Do In; Yang,Yun Sik; Hwang,Wan Goo; Kim,Jin Man, Method for generating gas plasma.
  24. Zarowin Charles B. (Rowayton CT) Bollinger L. David (Ridgefield CT), Methods and apparatus for generating a plasma for “downstream”rapid shaping of surfaces of substrates and films.
  25. Jewett Russell F., Methods and apparatus for plasma processing.
  26. Shelton Jay D. (1126 16 Rd. Fruita CO 81521), Plasma containment device.
  27. Satoru Kawakami JP; Katsuhiko Iwabuchi JP; Ryo Kuwajima JP; Ryusuke Ushikoshi JP; Naohito Yamada JP; Tetsuya Kawajiri JP, Plasma processing apparatus.
  28. Fujii Shuitsu,JPX, Plasma source for generating inductively coupled, plate-shaped plasma, having magnetically permeable core.
  29. Bittenson Steven ; Becker Frederick ; Breault Ronald, Preparation of independently generated highly reactive chemical species.
  30. Dessaux Odile (Lille FRX) Goudmand Pierre W. N. (Lille FRX) Ben Taleb Abdellah (Lille FRX) Cannesson Catherine (Villeneuve d\ASCQ FRX), Process for metallizing a surface.
  31. Markunas Robert J. (Chapel Hill NC) Hendry Robert (Hillsborough NC) Rudder Ronald A. (Cary NC), Remote plasma enhanced CVD method for growing an epitaxial semiconductor layer.
  32. Benjamin Neil ; Mangano Stefano ; Jewett Russell, Scalable helicon wave plasma processing device with a non-cylindrical source chamber having a serpentine antenna.
  33. Collins Kenneth ; Rice Michael ; Askarinam Eric ; Buchberger Douglas ; Roderick Craig, Thermal control apparatus for inductively coupled RF plasma reactor having an overhead solenoidal antenna.
  34. Holber, William M.; Chen, Xing; Cowe, Andrew B.; Besen, Matthew M.; Collins, Jr., Ronald W.; Trulli, Susan C.; Shao, Shouqian, Toroidal low-field reactive gas and plasma source having a dielectric vacuum vessel.
  35. Smith Donald K. ; Chen Xing ; Holber William M. ; Georgelis Eric, Toroidal low-field reactive gas source.
  36. Michael S. Cox ; Canfeng Lai ; Robert B. Majewski ; David P. Wanamaker ; Christopher T. Lane ; Peter Loewenhardt ; Shamouil Shamouilian ; John P. Parks, Toroidal plasma source for plasma processing.
  37. Ootera Hiroki,JPX ; Taki Masakazu,JPX ; Shintani Kenji,JPX ; Nishikawa Kazuyasu,JPX, Two chamber plasma processing apparatus.

이 특허를 인용한 특허 (16)

  1. Bhutta, Imran Ahmed, Electronically variable capacitor and RF matching network incorporating same.
  2. Bhutta, Imran Ahmed, High speed high voltage switching circuit.
  3. Bhutta, Imran, High voltage switching circuit.
  4. Druz, Boris; Yevtukhov, Rustam; Hieronymi, Robert; Hayes, Alan V.; Levoso, Mathew; Porshnev, Peter, Ion sources and methods for generating ion beams with controllable ion current density distributions over large treatment areas.
  5. Bhutta, Imran Ahmed, RF impedance matching network.
  6. Bhutta, Imran Ahmed, RF impedance matching network.
  7. Bhutta, Imran Ahmed, RF impedance matching network.
  8. Bhutta, Imran Ahmed, RF impedance matching network.
  9. Mavretic, Anton, RF impedance matching network.
  10. Mavretic, Anton, RF impedance matching network.
  11. Khaja, Abdul Aziz; Ayoub, Mohamad A.; Bokka, Ramesh; Pinson, II, Jay D.; Rocha-Alvarez, Juan Carlos, Remote plasma source for controlling plasma skew.
  12. Hoffman, Daniel J.; Carter, Daniel; Grilley, Randy; Peterson, Karen, Remote plasma source generating a disc-shaped plasma.
  13. Choi, Dai Kyu, Remote plasma system having self-management function and self management method of the same.
  14. Mavretic, Anton, Switching circuit.
  15. Mavretic, Anton, Switching circuit.
  16. Mavretic, Anton, Switching circuit for RF currents.
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