초록 ▼

A protective film (56) having a water/hydrogen blocking function is formed so as to cover the periphery of a pad electrode (54a) while being electrically isolated from the pad electrode. A material selected in the embodiment for composing the protective film is a highly moisture-proof material havin

A protective film (56) having a water/hydrogen blocking function is formed so as to cover the periphery of a pad electrode (54a) while being electrically isolated from the pad electrode. A material selected in the embodiment for composing the protective film is a highly moisture-proof material having a water/hydrogen blocking function considerably superior to that of the insulating material, such as palladium (Pd) or palladium-containing material, and iridium (Ir) or iridium oxide (IrOx: typically x=2) or an iridium- or iridium oxide-containing material. An FeRAM capable of reliably preventing water/hydrogen from entering inside, and of maintaining high performance of the ferroelectric capacitor structure (30) may be realized only by a simple configuration.

대표청구항 ▼

What is claimed is: 1. A semiconductor device comprising:a semiconductor substrate;a capacitor structure formed over said semiconductor substrate, and having a dielectric film held between a lower electrode and an upper electrode;an interconnect structure formed over said capacitor structure, and el

What is claimed is: 1. A semiconductor device comprising:a semiconductor substrate;a capacitor structure formed over said semiconductor substrate, and having a dielectric film held between a lower electrode and an upper electrode;an interconnect structure formed over said capacitor structure, and electrically connected to said capacitor structure; anda pad electrode electrically connected to said interconnect structure so as to establish electrical connection with externals;wherein a protective film composed of a palladium-containing material is formed so as to cover the periphery of said pad electrode, while being electrically isolated from said pad electrode, andwherein said pad electrode and said protective film are formed in the same level, are composed of the same material and have the same film thickness.