초록 ▼

An apparatus and method for depositing film on a substrate includes a plurality of conduits that allow by-product and reactant gases to flow past the edge of a substrate. The apparatus and process of the present invention has several advantages for enhanced chamber performance, particularly for micr

An apparatus and method for depositing film on a substrate includes a plurality of conduits that allow by-product and reactant gases to flow past the edge of a substrate. The apparatus and process of the present invention has several advantages for enhanced chamber performance, particularly for micro-volume chambers using pulsed deposition layer processes.

대표청구항 ▼

What is claimed: 1. An apparatus, comprising:a chemical isolation chamber;a deposition sub-chamber formed within the chemical isolation chamber;a substrate pedestal module, the substrate pedestal module comprising a pedestal base located within the chemical isolation chamber,wherein the substrate pe

What is claimed: 1. An apparatus, comprising:a chemical isolation chamber;a deposition sub-chamber formed within the chemical isolation chamber;a substrate pedestal module, the substrate pedestal module comprising a pedestal base located within the chemical isolation chamber,wherein the substrate pedestal module is configured to be movable between a first position and a second position,wherein an annular gap fluidly connects the deposition sub-chamber and the chemical isolation chamber when the substrate pedestal module is in the first position, andwherein the annular gap fluidly connecting the deposition sub-chamber and the chemical isolation chamber when the substrate pedestal module is in the first position is hermetically sealed when the substrate pedestal module is in the second position;a gas delivery module for delivering process gases; andan evacuation apparatus fluidly connected to the isolation chamber;a plurality of conduits fluidly connecting the deposition sub-chamber with the chemical isolation chamber,wherein the plurality of conduits permits fluidic flow between the deposition sub-chamber and the chemical isolation chamber when the substrate pedestal module is in the second position, andwherein the plurality of conduits is configured to maintain a pressure differential between the deposition sub-chamber and the isolation chamber when the substrate pedestal module is in the second position during a deposition process.