초록 ▼

Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer

Techniques for temperature-controlled ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for temperature-controlled ion implantation. The apparatus may comprise at least one thermal sensor adapted to measure a temperature of a wafer during an ion implantation process inside an end station of an ion implanter. The apparatus may also comprise a thermal conditioning unit coupled to the end station. The apparatus may further comprise a controller in communication with the thermal sensor and the thermal conditioning unit, wherein the controller compares the measured temperature to a desired wafer temperature and causes the thermal conditioning unit to adjust the temperature of the wafer based upon the comparison.

대표청구항 ▼

The invention claimed is: 1. A method for temperature-controlled ion implantation, the method comprising the steps of:performing a first ion implantation process on a first wafer;recording a first temperature profile during the first ion implantation process, the first temperature profile representa

The invention claimed is: 1. A method for temperature-controlled ion implantation, the method comprising the steps of:performing a first ion implantation process on a first wafer;recording a first temperature profile during the first ion implantation process, the first temperature profile representative of a change in temperature of the first wafer over time from a start time to an end time of the first ion implantation process;measuring a first dopant profile of the first wafer resulting from the first ion implantation process;determining, based on the first temperature profile and the first dopant profile, a second variable temperature profile for a second wafer, the second variable temperature profile representative of a non-zero change in temperature of the second wafer over time from a start time to an end time of a second ion implantation process, such that the second ion implantation process on the second wafer produces a second dopant profile of the second wafer substantially similar to the first dopant profile;performing the second ion implantation process on the second wafer;monitoring a temperature of the second wafer during the second ion implantation process; andadjusting the temperature of the second wafer to cause the second wafer to exhibit the second temperature profile.