초록 ▼

TOF and color sensing detector structures have x-axis spaced-apart y-axis extending finger-shaped gate structures with adjacent source collection regions. X-dimension structures are smaller than y-dimension structure and govern performance, characterized by high x-axis electric fields and rapid char

TOF and color sensing detector structures have x-axis spaced-apart y-axis extending finger-shaped gate structures with adjacent source collection regions. X-dimension structures are smaller than y-dimension structure and govern performance, characterized by high x-axis electric fields and rapid charge movement, contrasted with lower y-axis electric fields and slower charge movement. Preferably a potential barrier is implanted between adjacent gates and a bias gate is formed intermediate a gate and associated source region. For color detection sensor devices, gate bias voltage signals VA, VB coupled to the finger-shaped gate structures are high during sub-integration periods t1 and are low during a shorter charge movement period t2. In one embodiment, alternate finger-shaped gate structures preferable have different high magnitude sub-integration period voltages that enable detected ambient optical energy of different wavelengths to be discerned. Resultant detector structures can be operated at the more extreme gate voltages that are desirable for high performance.

대표청구항 ▼

What is claimed is: 1. A method to determine at least one spectral characteristic of multi-spectral optical energy, the method comprising the following steps:(a) subjecting to multi-spectral optical energy, a CMOS optical energy detector having at least one gate and an associated charge collection s

What is claimed is: 1. A method to determine at least one spectral characteristic of multi-spectral optical energy, the method comprising the following steps:(a) subjecting to multi-spectral optical energy, a CMOS optical energy detector having at least one gate and an associated charge collection source region from which an output detection signal is obtainable responsive to said multi-spectral optical energy, wherein a spectral response of said detector varies dynamically as a function of voltage coupled to said gate;(b) collecting from said detector at least two output detection signals generated responsive to detected said multi-spectral optical energy;(c) determining from said at least two output detection signals at least one spectral characteristic of said multi-spectral optical energy.