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Method for manufacturing SOI substrate

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/76
출원번호 US-0399047 (2009-03-06)
등록번호 US8003483 (2011-08-08)
우선권정보 JP-2008-008-070474(2008-03-18)
발명자 / 주소
  • Suzawa, Hideomi
  • Sasagawa, Shinya
  • Shimomura, Akihisa
  • Momo, Junpei
  • Kurata, Motomu
  • Muraoka, Taiga
  • Nei, Kosei
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
    Robinson Intellectual Property Law Office, P.C.
인용정보 피인용 횟수 : 7  인용 특허 : 29

초록

Forming an insulating film on a surface of the single crystal semiconductor substrate, forming a fragile region in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substrate with an ion beam through the insulating film, forming a bonding layer over the insul

대표청구항

What is claimed is: 1. A method for manufacturing an SOI substrate comprising the steps of:forming an insulating film on a surface of a single crystal semiconductor substrate;forming a fragile region in the single crystal semiconductor substrate by irradiating the single crystal semiconductor substr

이 특허에 인용된 특허 (29)

  1. Shunpei Yamazaki JP; Jun Koyama JP; Yoshiharu Hirakata JP; Takeshi Fukunaga JP, Electrooptical device.
  2. Yamazaki, Shunpei; Koyama, Jun; Hirakata, Yoshiharu; Fukunaga, Takeshi, Electrooptical device.
  3. Yamazaki,Shunpei; Koyama,Jun; Hirakata,Yoshiharu; Fukunaga,Takeshi, Electrooptical device.
  4. Endo,Akihiko; Kusaba,Tatsumi; Okuda,Hidehiko; Morita,Etsurou, Method for manufacturing SOI substrate.
  5. Endo,Akihiko; Kusaba,Tatsumi; Okuda,Hidehiko; Morita,Etsurou, Method for manufacturing SOI substrate.
  6. Endo,Akihiko; Kusaba,Tatsumi; Okuda,Hidehiko; Morita,Etsurou, Method for manufacturing SOI substrate.
  7. Matsui Masaki,JPX ; Yamauchi Shoichi,JPX ; Ohshima Hisayoshi,JPX ; Onoda Kunihiro,JPX ; Asai Akiyoshi,JPX ; Sasaya Takanari,JPX ; Enya Takeshi,JPX ; Sakakibara Jun,JPX, Method for manufacturing a semiconductor substrate.
  8. Hiroji Aga JP; Naoto Tate JP; Kiyoshi Mitani JP, Method of Fabricating SOI wafer by hydrogen ION delamination method and SOI wafer fabricated by the method.
  9. Shunpei Yamazaki JP; Hisashi Ohtani JP, Method of fabricating a high reliable SOI substrate.
  10. Yamazaki, Shunpei; Ohtani, Hisashi, Method of fabricating a semiconductor device.
  11. Park, Jea-Gun; Lee, Gon-Sub; Lee, Sang-Hee, Method of fabricating nano SOI wafer and nano SOI wafer fabricated by the same.
  12. Park,Jea Gun; Lee,Gon Sub; Lee,Sang Hee, Method of fabricating nano SOI wafer and nano SOI wafer fabricated by the same.
  13. Shunpei Yamazaki JP, Method of manufacturing a semiconductor device.
  14. Yamazaki, Shunpei; Nakajima, Setsuo; Miyairi, Hidekazu, Method of manufacturing a semiconductor device.
  15. Yamazaki,Shunpei, Method of manufacturing a semiconductor device.
  16. Yamazaki,Shunpei; Nakajima,Setsuo; Miyairi,Hidekazu, Method of manufacturing a semiconductor device.
  17. Yamazaki,Shunpei; Nakajima,Setsuo; Miyairi,Hidekazu, Method of manufacturing a semiconductor device.
  18. Takao Yonehara JP; Kunio Watanabe JP; Tetsuya Shimada JP; Kazuaki Ohmi JP; Kiyofumi Sakaguchi JP, Method of producing semiconductor member.
  19. Yamazaki, Shunpei, Nonvolatile memory and electronic apparatus.
  20. Fukunaga Takeshi,JPX, Process for production of SOI substrate and process for production of semiconductor device.
  21. Fukunaga, Takeshi, Process for production of SOI substrate and process for production of semiconductor device.
  22. Fukunaga, Takeshi, Process for production of SOI substrate and process for production of semiconductor device.
  23. Fukunaga,Takeshi, Process for production of SOI substrate and process for production of semiconductor device.
  24. Bruel Michel (Veurey FRX), Process for the production of thin semiconductor material films.
  25. Takafuji,Yutaka; Itoga,Takashi, Semiconductor device and manufacturing method thereof, SOI substrate and display device using the same, and manufacturing method of the SOI substrate.
  26. Yamazaki Shunpei,JPX ; Ohtani Hisashi,JPX ; Koyama Jun,JPX ; Fukunaga Takeshi,JPX, Semiconductor device having an SOI structure and manufacturing method therefor.
  27. Sato Nobuhiko,JPX ; Yonehara Takao,JPX ; Sakaguchi Kiyofumi,JPX, Semiconductor substrate and method of manufacturing the same.
  28. Yamauchi, Shoichi; Ohshima, Hisayoshi; Matsui, Masaki; Onoda, Kunihiro; Ooka, Tadao; Yamanaka, Akitoshi; Izumi, Toshifumi, Semiconductor substrate and method of manufacturing the same.
  29. Ohshima Hisayoshi,JPX ; Matsui Masaki,JPX ; Onoda Kunihiro,JPX ; Yamauchi Shoichi,JPX, Semiconductor substrate manufacturing method.

이 특허를 인용한 특허 (7)

  1. Dang, Bing; Knickerbocker, John U.; Lewandowski, Eric Peter; Tsang, Cornelia Kang-I, Adhesives for bonding handler wafers to device wafers and enabling mid-wavelength infrared laser ablation release.
  2. Koyama, Masaki; Momo, Junpei; Higa, Eiji; Honda, Hiroaki; Moriwaka, Tamae; Shimomura, Akihisa, Manufacturing method of SOI semiconductor device.
  3. Chang, Mei; Yudovsky, Joseph, Methods for atomic layer etching.
  4. Chang, Mei; Yudovsky, Joseph, Methods for atomic layer etching.
  5. Chang, Mei; Yudovsky, Joseph, Methods for atomic layer etching.
  6. Dang, Bing; Knickerbocker, John U.; Tsang, Cornelia Kang-I, Wafer debonding using long-wavelength infrared radiation ablation.
  7. Dang, Bing; Knickerbocker, John U.; Tsang, Cornelia Kang-I, Wafer debonding using mid-wavelength infrared radiation ablation.
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