초록 ▼

A fragile layer is formed in a single crystal silicon substrate, a first impurity silicon layer is formed on the one surface side in the single crystal silicon substrate, and a first electrode is formed thereover. After one surface of a supporting substrate and the first electrode are bonded, the si

A fragile layer is formed in a single crystal silicon substrate, a first impurity silicon layer is formed on the one surface side in the single crystal silicon substrate, and a first electrode is formed thereover. After one surface of a supporting substrate and the first electrode are bonded, the single crystal silicon substrate is separated along the fragile layer to form a single crystal silicon layer over the supporting substrate. Crystal defect repair treatment or crystal defect elimination treatment of the single crystal silicon layer is performed; then, epitaxial growth is conducted on the single crystal silicon layer by activating a source gas containing at least a silane-based gas with plasma generated at atmospheric pressure or near atmospheric pressure. A second impurity silicon layer is formed on a surface side in the single crystal silicon layer which is epitaxial grown.

대표청구항 ▼

What is claimed is: 1. A method for manufacturing a photoelectric conversion device comprising:forming a fragile layer in a region at a predetermined depth from one surface of a single crystal silicon substrate;forming a first impurity silicon layer on the one surface side in the single crystal sili

What is claimed is: 1. A method for manufacturing a photoelectric conversion device comprising:forming a fragile layer in a region at a predetermined depth from one surface of a single crystal silicon substrate;forming a first impurity silicon layer on the one surface side in the single crystal silicon substrate;forming a first electrode over the first impurity silicon layer;disposing a supporting substrate and the single crystal silicon substrate so that one surface of the supporting substrate and the one surface of the single crystal silicon substrate face each other;bonding the single crystal silicon substrate with the supporting substrate with at least the first impurity silicon layer and the first electrode interposed therebetween;forming a single crystal silicon layer over the supporting substrate by separating the single crystal silicon substrate along the fragile layer or vicinity of the fragile layer with heat treatment;performing crystal defect repair treatment of the single crystal silicon layer;forming a silicon layer while epitaxially growing the silicon layer using the single crystal silicon layer as a seed layer by activating a source gas containing at least a silane-based gas with plasma generated at atmospheric pressure or near atmospheric pressure; andforming a second impurity silicon layer on a surface side in the single crystal silicon layer which is epitaxial grown.