IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0950440
(2010-11-19)
|
발명자
/ 주소 |
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출원인 / 주소 |
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
1 인용 특허 :
47 |
초록
▼
Methods and apparatus provide for: a first source of plasma (first plasma), which includes a first species of ions, directing the first plasma out along a first axis; a second source of plasma (second plasma), which includes a second, differing, species of ions, directing the second plasma out along
Methods and apparatus provide for: a first source of plasma (first plasma), which includes a first species of ions, directing the first plasma out along a first axis; a second source of plasma (second plasma), which includes a second, differing, species of ions, directing the second plasma out along a second axis; and an accelerator system in communication with the first and second sources of plasma, and operating to: (i) accelerate the first species of ions at a first magnitude therethrough, and toward a semiconductor wafer, and (ii) simultaneously accelerate the second species of ions at a second magnitude, different from the first magnitude, therethrough, and toward the semiconductor wafer.
대표청구항
▼
The invention claimed is: 1. An apparatus, comprising:a first source of plasma (first plasma), which includes a first species of ions, directing the first plasma out along a first axis;a second source of plasma (second plasma), which includes a second, differing, species of ions, directing the secon
The invention claimed is: 1. An apparatus, comprising:a first source of plasma (first plasma), which includes a first species of ions, directing the first plasma out along a first axis;a second source of plasma (second plasma), which includes a second, differing, species of ions, directing the second plasma out along a second axis; andan accelerator system in communication with the first and second sources of plasma, and operating to: (i) accelerate the first species of ions at a first magnitude therethrough, and toward a semiconductor wafer, and (ii) simultaneously accelerate the second species of ions at a second magnitude, different from the first magnitude, therethrough, and toward the semiconductor wafer.
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