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Process to make high-K transistor dielectrics 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/00
출원번호 US-0454596 (2006-06-16)
등록번호 US8012824 (2011-08-23)
발명자 / 주소
  • Yao, Liang-Gi
  • Wang, Ming-Fang
  • Chen, Shih-Chang
  • Liang, Mong-Song
출원인 / 주소
  • Taiwan Semiconductor Manufacturing Company, Ltd.
대리인 / 주소
    Haynes and Boone, LLP
인용정보 피인용 횟수 : 2  인용 특허 : 39

초록 ▼

A method of reducing impurities in a high-k dielectric layer comprising the following steps. A substrate is provided. A high-k dielectric layer having impurities is formed over the substrate. The high-k dielectric layer being formed by an MOCVD or an ALCVD process. The high-k dielectric layer is ann

대표청구항 ▼

We claim: 1. A method of reducing impurities in a high-k dielectric layer, comprising the steps of: providing a substrate having STIs formed therein; forming a high-k dielectric layer between the STIs; the high-k dielectric layer having impurities therein and being formed by an ALCVD process; anneal

이 특허에 인용된 특허 (39)

  1. Chen,Chien Hao; Lee,Tze Liang; Chen,Shih Chang; Ku,Keh Chiang; Nieh,Chun Feng; Wang,Li Ting; Chang,Hsun, Advanced activation approach for MOS devices.
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  2. Ahn,Kie Y.; Forbes,Leonard, Atomic layer deposition of ZrHfSnOfilms as high k gate dielectrics.
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  3. Yao, Liang-Gi; Wang, Ming-Fang; Lin, Yeou-Ming; Ho, Tuo-Hung; Chen, Shih-Chang, Chemical vapor deposition (CVD) method employing wetting pre-treatment.
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  4. Thakur Randhir P. S. ; Deboer Scott J., Conditioning of dielectric materials.
    상세보기
  5. Lawrence A. Clevenger ; Louis L. Hsu ; Carl J. Radens ; Joseph F. Shepard, Jr., High dielectric constant materials forming components of DRAM storage cells.
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  6. Buchanan, Douglas A.; Callegari, Alessandro C.; Gribelyuk, Michael A.; Jamison, Paul C.; Neumayer, Deborah Ann, High mobility FETS using A1203 as a gate oxide.
    상세보기
  7. Tsu Robert ; Asano Isamu,JPX ; Iijima Shinpei,JPX ; McKee William R., Integrated circuit capacitor.
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  8. Robert J. Higgins, Jr. ; Robert E. Stengel, Integrated gallium arsenide communications systems.
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  9. Forbes,Leonard; Ahn,Kie Y., Memory utilizing oxide-nitride nanolaminates.
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  10. Sohn, Yong-Sun; Joo, Sung-Jae, Method for fabricating semiconductor device with ultra-shallow super-steep-retrograde epi-channel by decaborane doping.
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  11. Brask, Justin K.; Glassman, Timothy E.; Doczy, Mark L.; Metz, Matthew V., Method for making a semiconductor device having a high-k gate dielectric.
    상세보기
  12. Haukka, Suvi; Huotari, Hannu, Method of depositing barrier layer for metal gates.
    상세보기
  13. Iwamoto,Kunihiko; Tominaga,Koji; Nabatame,Toshihide; Nishimura,Tomoaki, Method of fabricating a metal oxynitride thin film that includes a first annealing of a metal oxide film in a nitrogen-containing atmosphere to form a metal oxynitride film and a second annealing of the metal oxynitride film in an oxidizing atmosphere.
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  14. Kim,Kyoung seok; Park,Hong bae; Kim,Bong hyun; Kim,Sung tae; Kwon,Jong wan; Lee,Jung hyun; Kim,Ki chul; Lim,Jae soon; Nam,Gab jin; Kim,Young sun, Method of forming high dielectric film using atomic layer deposition and method of manufacturing capacitor having the high dielectric film.
    상세보기
  15. Yeo,Jae Hyun; Kim,Young Sun; Kim,Sung Tae; Park,In Sung; Im,Gi Vin, Method of forming material using atomic layer deposition and method of forming capacitor of semiconductor device using the same.
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  16. Boyd Diane Catherine ; Hanafi Hussein Ibrahim ; Ieong Meikei ; Natzle Wesley Charles, Method of making MOSFET with high dielectric constant gate insulator and minimum overlap capacitance.
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  17. Gardner Mark I. ; Gilmer Mark C., Method of making a semiconductor device with a composite gate dielectric layer and gate barrier layer.
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  18. Hwang, Hyun Sang, Method of manufacturing high-k gate dielectric by use of annealing in high-pressure hydrogen atmosphere.
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  19. Zhuang, Wei-Wei; Evans, David R.; Hsu, Sheng Teng, Method of synthesis of hafnium nitrate for HfO2 thin film deposition via ALCVD process.
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  20. Conley, Jr., John F.; Ono, Yoshi, Method to control the interfacial layer for deposition of high dielectric constant films.
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  21. Yoshi Ono ; Wei-Wei Zhuang ; Rajendra Solanki, Methods of using atomic layer deposition to deposit a high dielectric constant material on a substrate.
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  22. Liang Gi Yao TW; Ming Fang Wang TW; Shih Chang Chen TW; Mong Song Liang TW, Methods to create high-k dielectric gate electrodes with backside cleaning.
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  23. Peter J. Wilson ; Mihir A. Pandya, Microprocessor structure having a compound semiconductor layer.
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  24. Pan,Wei; Ono,Yoshi; Evans,David R.; Hsu,Sheng Teng, Multi-layered barrier metal thin films for Cu interconnect by ALCVD.
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  25. Gardner Mark I. ; Fulford H. Jim ; May Charles E, Process for formation of isolation trenches with high-K gate dielectrics.
    상세보기
  26. Wang, Ming-Fang; Chen, Chien-Hao; Yao, Liang-Gi; Chen, Shih-Chang, Process for integration of a high dielectric constant gate insulator layer in a CMOS device.
    상세보기
  27. Wang, Ming-Fang; Chen, Chien-Hao; Yao, Liang-Gi; Chen, Shih-Chang, Process for integration of a high dielectric constant gate insulator layer in a CMOS device.
    상세보기
  28. Yao,Liang Gi; Wang,Ming Fang; Chen,Shih Chang; Liang,Mon Song, Process to make high-k transistor dielectrics.
    상세보기
  29. Halliyal,Arvind; Singh,Bhanwar; Subramanian,Ramkumar, Scatterometry and acoustic based active control of thin film deposition process.
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  30. Yoshihara, Takuya, Semiconductor device and its manufacturing method.
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  31. Ngo,Minh Van; Woo,Christy; Pan,James; Besser,Paul R.; Yin,Jinsong, Semiconductor device with metal gate and high-k tantalum oxide or tantalum oxynitride gate dielectric.
    상세보기
  32. Iwamoto,Kunihiko; Nabatame,Toshihide; Tominaga,Koji; Yasuda,Tetsuji, Semiconductor device, process for producing the same and process for producing metal compound thin film.
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  33. Shih,Chien Hsueh; Chou,Shih Wei; Su,Hung Wen; Tsai,Minghsing, Silicide structure for ultra-shallow junction for MOS devices.
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  34. Lawrence E. Lach ; Robert Lempkowski ; Tomasz L. Klosowiak ; Keryn Lian, Structure and method for fabricating an electro-optic system having an electrochromic diffraction grating.
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  35. Jerome M. Eldridge, Thin dielectric films for DRAM storage capacitors.
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  36. Quevedo Lopez,Manuel A.; Chambers,James J.; Colombo,Luigi; Visokay,Mark R., Top surface roughness reduction of high-k dielectric materials using plasma based processes.
    상세보기
  37. Gardner Mark I. ; Gilmer Mark C., Ultra short transistor channel length formed using a gate dielectric having a relatively high dielectric constant.
    상세보기
  38. Gardner Mark I. ; Fulford ; Jr. H. Jim ; Wristers Derrick J., Ultra thin high K spacer material for use in transistor fabrication.
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  39. Lyndee L. Hilt ; Ravindranath Droopad, Using silicate layers for composite semiconductor.
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이 특허를 인용한 특허 (2)

  1. Chen, Yong; He, Yonggen, High-K layers, transistors, and fabrication method.
    상세보기
  2. Yao, Liang-Gi; Wang, Ming-Fang; Chen, Shih-Chang; Liang, Mong-Song, Process to make high-K transistor dielectrics.
    상세보기

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