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Post passivation interconnection schemes on top of the IC chips 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-023/48
출원번호 US-0142825 (2008-06-20)
등록번호 US8013449 (2011-08-23)
발명자 / 주소
  • Lin, Mou-Shiung
  • Chou, Chiu-Ming
  • Chou, Chien-Kang
출원인 / 주소
  • Megica Corporation
대리인 / 주소
    McDermott Will & Emery, LLP
인용정보 피인용 횟수 : 0  인용 특허 : 162

초록

A new method is provided for the creation of interconnect lines. Fine line interconnects are provided in a first layer of dielectric overlying semiconductor circuits that have been created in or on the surface of a substrate. A layer of passivation is deposited over the layer of dielectric and a thi

대표청구항

What is claimed is: 1. A chip comprising:a silicon substrate;an ESD circuit on said silicon substrate;an internal circuit on said silicon substrate;a driver, receiver or I/O circuit on said silicon substrate;a dielectric layer over said silicon substrate;a fine-line metallization structure over said

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