초록 ▼

The invention relates to a process for manufacturing a multilayered semiconductor wafer comprising a handle wafer (5) and a layer (40) comprising silicon carbide bonded to the handle wafer (5), the process comprising the steps of: a) providing a handle wafer (5), b) providing a donor wafer (1) compr

The invention relates to a process for manufacturing a multilayered semiconductor wafer comprising a handle wafer (5) and a layer (40) comprising silicon carbide bonded to the handle wafer (5), the process comprising the steps of: a) providing a handle wafer (5), b) providing a donor wafer (1) comprising a donor layer (2) and a remainder (3) of the donor wafer, the donor layer (2) comprising monocrystalline silicon, e) bonding the donor layer (2) of the donor wafer (1) to the handle wafer (5), and f) removing the remainder (3) of the donor wafer in order to expose the donor layer (2) which remains bonded to the handle wafer (5), the process being characterized by further steps of c) implanting carbon ions into the donor layer (2) in order to produce a layer (4) comprising implanted carbon, and d) heat-treating the donor layer (2) comprising the layer (4) comprising implanted carbon in order to form a silicon carbide donor layer (44) in at least part of the donor layer (2). The invention also relates to a multilayered semiconductor wafer comprising a handle wafer (5) and a silicon carbide donor layer (44) which is bonded to the handle wafer (5), wherein the silicon carbide donor layer (44) is free of twins and free of additional silicon carbide polytypes, as determined by X-ray diffraction.

대표청구항 ▼

The invention claimed is: 1. A process for manufacturing a multilayered semiconductor wafer comprising a handle wafer and a silicon carbide donor layer bonded to the handle wafer, the process comprising the steps of:a) providing a handle wafer,b) providing a donor wafer comprising a donor layer and

The invention claimed is: 1. A process for manufacturing a multilayered semiconductor wafer comprising a handle wafer and a silicon carbide donor layer bonded to the handle wafer, the process comprising the steps of:a) providing a handle wafer,b) providing a donor wafer comprising a donor layer and a remainder of the donor wafer, the donor layer comprising monocrystalline silicon,c) implanting carbon ions into the donor layer in order to produce a layer comprising implanted carbon,d) heat-treating the donor layer comprising the layer comprising implanted carbon in order to form a silicon carbide donor layer in at least part of the donor layer,e) bonding the donor layer of the donor wafer to the handle wafer, andf) removing the remainder of the donor wafer in order to expose the donor layer which remains bonded to the handle wafer.