초록 ▼

A method for fabricating a laser diode comprising providing a laser diode epitaxial structure and depositing a metal layer stack on the epitaxial structure, the stack comprising a contact and sacrificial layer. A ridge is formed in the laser diode epitaxial structure, the stack being the mask formin

A method for fabricating a laser diode comprising providing a laser diode epitaxial structure and depositing a metal layer stack on the epitaxial structure, the stack comprising a contact and sacrificial layer. A ridge is formed in the laser diode epitaxial structure, the stack being the mask forming the ridge. An insulating layer is deposited over the ridge and at least a portion of the sacrificial layer is removed. At least a portion of the insulating thin film at the top of the stack is also removed. A pad metal is deposited in electrical contact with the contact and is insulated from the ridge and laser diode epitaxial structures by the insulating layer.

대표청구항 ▼

I claim: 1. A laser diode, comprising:a laser diode epitaxial structure comprising a ridge with mesas on the sides of said ridge, said ridge having a top surface and side surfaces, said ridge comprising a metal p-contact and a protection layer on said p-contact;an insulating layer covering said side

I claim: 1. A laser diode, comprising:a laser diode epitaxial structure comprising a ridge with mesas on the sides of said ridge, said ridge having a top surface and side surfaces, said ridge comprising a metal p-contact and a protection layer on said p-contact;an insulating layer covering said side surfaces of said ridge; anda pad metal on said insulating layer and in electrical contact with said p-contact through said top surface of said ridge, said pad metal on said side surfaces of said ridge and insulated from said side surfaces of said ridge by said insulating layer.