초록 ▼

A method for locally controlling the stoichiometry of an epitaxially deposited layer on a semiconductor substrate is provided. The method includes directing a first reactant gas and a doping gas across a top surface of a semiconductor substrate and directing a drive gas and a second reactant gas aga

A method for locally controlling the stoichiometry of an epitaxially deposited layer on a semiconductor substrate is provided. The method includes directing a first reactant gas and a doping gas across a top surface of a semiconductor substrate and directing a drive gas and a second reactant gas against the substrate separately from the first reactant gas in a manner that rotates the substrate while introducing the second reactant gas at an edge of the substrate to control each reactant separately, thereby compensating and controlling depletion effects and improving doping uniformity in resulting epitaxial layers on the substrate.

대표청구항 ▼

The invention claimed is: 1. A method for forming uniformly-doped epitaxial layers on a substrate, the method comprising:positioning a substrate on a top surface of a satellite in a reactor for epitaxial deposition, the satellite being positioned such that at least a first drive gas channel through

The invention claimed is: 1. A method for forming uniformly-doped epitaxial layers on a substrate, the method comprising:positioning a substrate on a top surface of a satellite in a reactor for epitaxial deposition, the satellite being positioned such that at least a first drive gas channel through which a drive gas travels is defined between the bottom surface of the satellite and a top surface of a platter;positioning the bottom surface of the satellite on the top surface of the platter having at least a second drive gas channel through which a drive gas travels, the second drive gas channel being in communication with the top surface of the platter and a bottom surface of the platter;directing a first gas flow containing a reactant gas and a doping gas across a top surface of the substrate;directing a drive gas and a second reactant gas through the second drive gas channel;directing the drive gas and the second reactant gas through the first drive gas channel; androtating the platter and the satellite to introduce the second reactant gas from the second drive gas channel to the first drive gas channel and to the edge of the rotating substrate.