초록 ▼

A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charg

A thin film transistor of the present invention has an active layer including at least source, drain and channel regions formed on an insulating surface. A high resistivity region is formed between the channel region and each of the source and drain regions. A film capable of trapping positive charges therein is provided on at least the high resistivity region so that N-type conductivity is induced in the high resistivity region. Accordingly, the reliability of N-channel type TFT against hot electrons can be improved.

대표청구항 ▼

What is claimed is: 1. A semiconductor device comprising:a single crystalline semiconductor layer on an insulating layer, the single crystalline semiconductor layer comprising a source region, a drain region, and a channel region located between the source region and the drain region;a gate electrod

What is claimed is: 1. A semiconductor device comprising:a single crystalline semiconductor layer on an insulating layer, the single crystalline semiconductor layer comprising a source region, a drain region, and a channel region located between the source region and the drain region;a gate electrode over the channel region with an insulating layer interposed therebetween;an impurity region having a lower impurity concentration than the source region and the drain region, the impurity region being located between the channel region and at least one of the source region and the drain region; anda silicon nitride film over the gate electrode and the single crystalline semiconductor layer,wherein each of the source region and the drain region comprises a metal silicide region, and the silicon nitride film is in contact with an upper surface of the metal silicide region.