초록 ▼

It is an object of one embodiment of the preset invention to conduct separation without damaging a semiconductor element when the semiconductor element is made flexible. Further, it is another object of one embodiment of the preset invention to provide a technique for weakening adhesion between a se

It is an object of one embodiment of the preset invention to conduct separation without damaging a semiconductor element when the semiconductor element is made flexible. Further, it is another object of one embodiment of the preset invention to provide a technique for weakening adhesion between a separation layer and a buffer layer. Furthermore, it is another object of one embodiment of the preset invention to provide a technique for preventing generation of the bending stress on a semiconductor element due to separation. A semiconductor element formed over a separation layer with a buffer layer interposed therebetween is separated by dissolving the separation layer by using an etchant. Alternatively, separation is conducted by inserting a film into a region where a separation layer is dissolved by being in contact with an etchant and moving the film in a direction toward a region where the separation layer is not dissolved.

대표청구항 ▼

What is claimed is: 1. A method for manufacturing a flexible semiconductor device, comprising the steps of:forming a separation layer over a substrate;forming a semiconductor element over the separation layer;forming a resin layer over the semiconductor element;dissolving the separation layer by usi

What is claimed is: 1. A method for manufacturing a flexible semiconductor device, comprising the steps of:forming a separation layer over a substrate;forming a semiconductor element over the separation layer;forming a resin layer over the semiconductor element;dissolving the separation layer by using an etchant;inserting a film into a region where the separation layer is dissolved; andseparating the semiconductor element from the substrate by moving the film in a direction toward a region where the separation layer is not dissolved.