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Bonded semiconductor structure and method of making the same 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/30
출원번호 US-0470344 (2009-05-21)
등록번호 US8058142 (2011-11-01)
우선권정보 KR-2003-0-2003-0040920(2003-06-24)
발명자 / 주소
  • Lee, Sang-Yun
출원인 / 주소
  • BeSang Inc.
대리인 / 주소
    Schmeiser Olsen & Watts LLP
인용정보 피인용 횟수 : 3  인용 특허 : 100

초록 ▼

A bonded semiconductor structure static random access memory circuit includes a support substrate which carries a first horizontally oriented transistor, and an interconnect region which includes a conductive line. The memory circuit includes a donor substrate which includes a semiconductor layer st

대표청구항 ▼

The invention claimed is: 1. A bonded semiconductor structure static random access memory circuit, comprising:a support substrate which carries a first horizontally oriented transistor, and an interconnect region which includes a conductive line; anda donor substrate which includes a semiconductor l

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