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Fluid bed reactor 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • C23C-016/455
출원번호 US-0948557 (2010-11-17)
등록번호 US8075692 (2011-11-29)
발명자 / 주소
  • Osborne, E. Wayne
  • Spangler, Michael V.
  • Allen, Levi C.
  • Geertsen, Robert J.
  • Ege, Paul E.
  • Stupin, Walter J.
  • Zeininger, Gerald
출원인 / 주소
  • Rec Silicon Inc
대리인 / 주소
    Klarquist Sparkman, LLP
인용정보 피인용 횟수 : 15  인용 특허 : 38

초록

Fluidized bed reactor systems for producing high purity silicon-coated particles are disclosed. A vessel has an outer wall, an insulation layer inwardly of the outer wall, at least one heater positioned inwardly of the insulation layer, a removable concentric liner inwardly of the heater, a central

대표청구항

We claim: 1. A heated silicon deposition reactor system, comprising:a plurality of seed particles;a vessel having an outer wall;an insulation layer facing an inner surface of the outer wall;at least one heater positioned inwardly of the insulation layer;a removable concentric liner positioned inward

이 특허에 인용된 특허 (38)

  1. Conger Darrell R. (Portland OR) Posa John G. (Lake Oswego OR) Wickenden Dennis K. (Lake Oswego OR), Apparatus for depositing material on a substrate.
  2. Ohkusa T.,JPX ; Ramamurthi Ram K., Apparatus for fabricating spherical shaped semiconductor integrated circuits.
  3. Zirinsky Stanley (Dobbs Ferry NY) Irene Eugene A. (Wappingers Falls NY) Silvestri Victor J. (Mount Kisco NY), Chemical vapor deposition of dielectric films containing Al, N, and Si.
  4. Watanabe Atsushi (Nijigaoka-higashidanchi Room No. 19-103 ; No. 21 ; Kamioka-machi 2-chome ; Meitou-ku Tsurugashima JPX) Amano Hiroshi (Nijigaoka-higashidanchi Room No. 19-103 ; No. 21 ; Kamioka-mach, Compound semiconductor vapor phase epitaxial device.
  5. Kordina Olle,SEX ; Hallin Christer,SEX ; Janzen Erik,SEX, Device and a method for epitaxially growing objects by CVD.
  6. Janz��n,Erik; R��back,Peter; Ellison,Alexandre, Device and method for producing single crystals by vapor deposition.
  7. Ellison Alex,SEX ; Kordina Olle,SEX ; Gu Chun-Yuan,SEX ; Hallin Christer,SEX ; Janzen Erik,SEX ; Tuominen Marko,SEX, Device for epitaxially growing objects and method for such a growth.
  8. Kordina Olle,SEX ; Hermansson Willy,SEX ; Tuominen Marko,SEX, Device for heat treatment of objects and a method for producing a susceptor.
  9. Flagella Robert N. (Ridgefield WA), Fluidized bed for production of polycrystalline silicon.
  10. Kim Hee Y. (Daejeon KRX) Song Yong M. (Daejeon KRX) Jeon Jong Y. (Daejeon KRX) Kwon Dae H. (Daejeon KRX) Lee Kang M. (Daejeon KRX) Lee Jae S. (Daejeon KRX) Park Dong S. (Daejeon KRX), Fluidized bed reactor heated by microwaves.
  11. Dixon Robert E., Gas inlet apparatus and method for chemical vapor deposition reactors.
  12. Takeshita Kazuhiro,JPX ; Nagashima Shinji,JPX ; Mizutani Yoji,JPX ; Katayama Kyoshige,JPX, Gas treatment apparatus.
  13. Kim Hee Y. (Daejeon KRX) Song Yong M. (Daejeon KRX) Jeon Jong Y. (Daejeon KRX) Kwon Dae H. (Daejeon KRX) Lee Kang M. (Daejeon KRX) Lee Jae S. (Daejeon KRX) Park Dong S. (Daejeon KRX), Heating of fluidized bed reactor by microwaves.
  14. Motakef,Shariar; Worlikar,Aniruddha S., High-purity crystal growth.
  15. Motakef,Shariar; Worlikar,Aniruddha S., High-purity crystal growth.
  16. Fujikawa Takao (Kobe JPX) Ishii Takahiko (Kobe JPX), Impregnating carbonizing process and apparatus.
  17. Christensen Robert W. (Monte Sereno CA), Induction heated pancake epitaxial reactor.
  18. Gadgil Prasad N. (Burnaby CAX), Inverted diffuser stagnation point flow reactor for vapor deposition of thin films.
  19. Parsons James D. (Newbury Park CA), Inverted positive vertical flow chemical vapor deposition reactor chamber.
  20. Lord, Stephen M, Machine for production of granular silicon.
  21. Kim, Young Hee; Park, Yong-Ki, Method and apparatus for preparing polysilicon granules.
  22. Posa John G. (Lake Oswego OR), Method and apparatus for producing a constant flow, constant pressure chemical vapor deposition.
  23. Rupp Roland,DEX ; Voelkl Johannes,DEX, Method and apparatus for the production of SiC by means of CVD with improved gas utilization.
  24. Keller Klaus,CHX, Method for CVD surface coating and CVD reactor system.
  25. Yanashima Katsunori,JPX ; Ikeda Masao,JPX ; Tomioka Satoshi,JPX, Method for growing nitride III-V compound semiconductor layers and method for fabricating a nitride III-V compound semi.
  26. Kim, Hee Young; Yoon, Kyung Koo; Park, Yong Ki; Choi, Won Choon, Method for preparing granular polycrystalline silicon using fluidized bed reactor.
  27. Herold, Heiko; Holdenried, H. Günter; Mleczko, Leslaw; Pfaffelhuber, Matthias; König, Karl Theodor, Method for producing highly pure, granular silicon in a fluidised bed.
  28. Lord Stephen M. ; Milligan Robert J., Method for silicon deposition.
  29. Sumakeris,Joseph John; Paisley,Michael James; O'Loughlin,Michael John, Methods for controlling formation of deposits in a deposition system and deposition methods including the same.
  30. Poepken, Tim; Sonnenschein, Raymund, Process for producing silicon.
  31. Manabe Katsuhide (Ichinomiya JPX) Okazaki Nobuo (Konan JPX) Akazaki Isamu (Machida JPX) Hiramatsu Kazumasa (Yokkaichi JPX) Amano Hiroshi (Hamamatsu JPX), Process of vapor growth of gallium nitride and its apparatus.
  32. Ogura Mototsugu (Nara JPX) Ban Yuzaburoh (Osaka JPX) Hase Nobuyasu (Hyogo JPX), Process of vapor phase epitaxy of compound semiconductors.
  33. Weidhaus,Dieter; Hayduk,Alexander, Radiation-heated fluidized-bed reactor.
  34. Berthold, Rico; Beyer, Christian; Müller, Armin; Pätzold, Carsten; Sill, Torsten; Singliar, Ute; Sonnenschein, Raymund; Ziegenbalg, Gerald, Reactor and process for the preparation of silicon.
  35. Lord Stephen M. ; Milligan Robert J., Silicon deposition reactor apparatus.
  36. Padovani Francois A. (Dallas TX), Silicon seed production process.
  37. Ishikawa Akira, Spherical shaped semiconductor integrated circuit.
  38. Cleaver Mark P. ; Wilson Gregory J. ; McHugh Paul R. ; Funk Larry J., Thermal processor and components thereof.

이 특허를 인용한 특허 (15)

  1. Geertsen, Robert J., Apparatus and method for silicon powder management.
  2. Yang, Cheol-Kyu; Lee, Seog-Min; Jang, Chul-Young; Son, Dong-Min; Ahn, Byung-Ho; Jeon, Du-Han; Joo, Yong-Kyu; Ha, Sang-Cheol, Batch type apparatus for manufacturing semiconductor devices.
  3. Sansegundo-Sanchez, Javier; Benavides-Rel, Xavier; Vales-Canle, Manuel; Tomas-Martinez, Maria, Cooled gas distribution plate, thermal bridge breaking system, and related methods.
  4. Suzuki, Kunihiko; Mitani, Shinichi, Deposition apparatus and method.
  5. Morisaki, Eisuke; Kobayashi, Hirokatsu; Yoshikawa, Jun; Sawada, Ikuo; Kimoto, Tsunenobu; Kawamoto, Noriaki; Aketa, Masatoshi, Film deposition apparatus and film deposition method.
  6. Ito, Hideki; Suzuki, Kunihiko; Tsuchida, Hidekazu; Kamata, Isaho; Ito, Masahiko; Fujibayashi, Hiroaki; Naito, Masami; Adachi, Ayumu; Nishikawa, Koichi, Film formation apparatus and film formation method.
  7. Miller, Matthew J.; Spangler, Michael V.; Zeininger, Gerald A.; Onstot, William J.; Stupin, Walter J., Joint design for segmented silicon carbide liner in a fluidized bed reactor.
  8. Geertsen, Robert J., Method and apparatus for separating fine particulate material from a mixture of coarse particulate material and fine particulate material.
  9. Miller, Matthew J.; Spangler, Michael V., Method and apparatus to reduce contamination of particles in a fluidized bed reactor.
  10. Yilmaz, Sefa; Miller, Matthew J.; Spangler, Michael V.; Wemp, Barry; Julsrud, Stein, Non-contaminating bonding material for segmented silicon carbide liner in a fluidized bed reactor.
  11. Spangler, Michael V.; Miller, Matthew J., Obstructing member for a fluidized bed reactor.
  12. Miller, Matthew; Spangler, Michael V.; Wemp, Barry; Osborne, E. Wayne, Probe assembly for a fluid bed reactor.
  13. Miller, Matthew J., Reactor component placement inside liner wall.
  14. Spangler, Michael V., Segmented liner and transition support ring for use in a fluidized bed reactor.
  15. Osborne, E. Wayne; Miller, Matthew J.; Spangler, Michael V.; Zeininger, Gerald A.; Onstot, William J.; Stupin, Walter J., Segmented silicon carbide liner.
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