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A method for manufacturing a substrate of a semiconductor device is provided, which comprises a step of forming a fragile layer in a semiconductor substrate by irradiating the semiconductor substrate with ion species, a step of forming a bonding layer over the semiconductor substrate, a step of bond

A method for manufacturing a substrate of a semiconductor device is provided, which comprises a step of forming a fragile layer in a semiconductor substrate by irradiating the semiconductor substrate with ion species, a step of forming a bonding layer over the semiconductor substrate, a step of bonding the semiconductor substrate and a substrate having an insulating surface with the bonding layer interposed therebetween, a step of separating the semiconductor substrate with a semiconductor layer left over the substrate having the insulating surface by heating at least the semiconductor substrate, and a step of reprocessing the semiconductor substrate from which the semiconductor layer is separated.

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1. A method for manufacturing a substrate of a semiconductor device comprising the steps of: forming a fragile layer in a semiconductor substrate by irradiating the semiconductor substrate with ion species;forming a bonding layer over the semiconductor substrate;bonding the semiconductor substrate a

1. A method for manufacturing a substrate of a semiconductor device comprising the steps of: forming a fragile layer in a semiconductor substrate by irradiating the semiconductor substrate with ion species;forming a bonding layer over the semiconductor substrate;bonding the semiconductor substrate and a substrate having an insulating surface with the bonding layer interposed therebetween;separating the semiconductor substrate with a semiconductor layer left over the substrate having the insulating surface by heating at least the semiconductor substrate;thermally oxidizing the semiconductor substrate to form an oxide film over all surfaces of the semiconductor substrate after the separating step; andirradiating the semiconductor substrate with laser light after the separating step. 2. The method for manufacturing a substrate of a semiconductor device according to claim 1, wherein the ion species are generated by excitation of a source gas containing one or more selected from a hydrogen gas, a rare gas, a halogen gas, and a halogen compound gas. 3. The method for manufacturing a substrate of a semiconductor device according to claim 1, wherein the fragile layer is formed by irradiating with H3+ ions, and wherein the H3+ ions are mass-separated from hydrogen ions generated from a hydrogen gas. 4. The method for manufacturing a substrate of a semiconductor device according to claim 1, wherein the fragile layer is formed by irradiating with an ion beam containing H+ ions, H2+ ions, and H3+ ions,wherein the ion beam contains the H3+ ions with a proportion of 70% or more with respect to the total amount of the H+ ions, the H2+ ions, and the H3+ ions. 5. The method for manufacturing a substrate of a semiconductor device according to claim 1, wherein a silicon oxide film is formed as the bonding layer by a chemical vapor deposition method using an organic silane gas. 6. The method for manufacturing a substrate of a semiconductor device according to claim 1, further comprising a step of forming a barrier layer over the semiconductor substrate before the bonding layer is formed. 7. The method for manufacturing a substrate of a semiconductor device according to claim 1, further comprising a step of forming a second bonding layer over the substrate having the insulating surface before the semiconductor substrate and the substrate having the insulating surface are bonded. 8. The method for manufacturing a substrate of a semiconductor device according to claim 1, further comprising a step of thermally oxidizing the semiconductor substrate to form an oxide film over the semiconductor substrate after the semiconductor substrate is irradiated with laser light. 9. The method for manufacturing a substrate of a semiconductor device according to claim 1, wherein the semiconductor substrate is irradiated with laser light in an inert atmosphere. 10. The method for manufacturing a substrate of a semiconductor device according to claim 1, wherein the semiconductor substrate is irradiated with laser light in a nitrogen atmosphere. 11. The method for manufacturing a substrate of a semiconductor device according to claim 1, wherein the laser light is laser light oscillated from a pulsed laser. 12. A method for manufacturing a substrate of a semiconductor device comprising the steps of: forming a fragile layer in a semiconductor substrate by irradiating the semiconductor substrate with ion species;forming a bonding layer over the semiconductor substrate;bonding the semiconductor substrate and a substrate having an insulating surface with the bonding layer interposed therebetween;separating the semiconductor substrate with a semiconductor layer left over the substrate having the insulating surface by heating at least the semiconductor substrate; andthermally oxidizing the semiconductor substrate to form an oxide film over all surfaces of the semiconductor substrate after the separating step. 13. The method for manufacturing a substrate of a semiconductor device according to claim 12, wherein the ion species are generated by excitation of a source gas containing one or more selected from a hydrogen gas, a rare gas, a halogen gas, and a halogen compound gas. 14. The method for manufacturing a substrate of a semiconductor device according to claim 12, wherein the fragile layer is formed by irradiating with H3+ ions, and wherein the H3+ ions are mass-separated from hydrogen ions generated from a hydrogen gas. 15. The method for manufacturing a substrate of a semiconductor device according to claim 12, wherein the fragile layer is formed by irradiating with an ion beam containing H+ ions, H2+ ions, and H3+ ions,wherein the ion beam contains the H3+ ions with a proportion of 70% or more with respect to the total amount of the H+ ions, the H2+ ions, and the H3+ ions. 16. The method for manufacturing a substrate of a semiconductor device according to claim 12, wherein a silicon oxide film is formed as the bonding layer by a chemical vapor deposition method using an organic silane gas. 17. The method for manufacturing a substrate of a semiconductor device according to claim 12, further comprising a step of forming a barrier layer over the semiconductor substrate before the bonding layer is formed. 18. The method for manufacturing a substrate of a semiconductor device according to claim 12, further comprising a step of forming a second bonding layer over the substrate having the insulating surface before the semiconductor substrate and the substrate having the insulating surface are bonded. 19. The method for manufacturing a substrate of a semiconductor device according to claim 12, further comprising a step of irradiating with laser light through the oxide film after the semiconductor substrate is thermally oxidized. 20. The method for manufacturing a substrate of a semiconductor device according to claim 12, further comprising a step of removing the oxide film. 21. The method for manufacturing a substrate of a semiconductor device according to claim 12, wherein the semiconductor substrate is thermally oxidized in an atmosphere containing halogen. 22. The method for manufacturing a substrate of a semiconductor device according to claim 12, wherein the semiconductor substrate is thermally oxidized in an atmosphere containing hydrochloric acid.