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An optoelectronic semiconductor component, comprising a carrier substrate, and an interlayer that mediates adhesion between the carrier substrate and a component structure. The component structure comprises an active layer provided for generating radiation, and a useful layer arranged between the in

An optoelectronic semiconductor component, comprising a carrier substrate, and an interlayer that mediates adhesion between the carrier substrate and a component structure. The component structure comprises an active layer provided for generating radiation, and a useful layer arranged between the interlayer and the active layer. The useful layer has a separating area remote from the carrier substrate.

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1. An optoelectronic semiconductor component, comprising: a carrier substrate;an interlayer that mediates adhesion between the carrier substrate and a component structure, wherein the component structure comprises an active layer provided for generating radiation;a useful layer arranged between the

1. An optoelectronic semiconductor component, comprising: a carrier substrate;an interlayer that mediates adhesion between the carrier substrate and a component structure, wherein the component structure comprises an active layer provided for generating radiation;a useful layer arranged between the interlayer and the active layer, wherein the useful layer has a separating area remote from the carrier substrate;a coupling-out mirror arranged on that side of the component structure which is remote from the interlayer; anda contact layer comprising a transparent conductive oxide that is arranged between the component structure and the coupling-out mirror, wherein the following relationship is fulfilled: d=(mλ/2)/nKS,wherein d is the thickness of the contact layer, λ is the wavelength of the electromagnetic radiation generated in the active layer, nKS is the refractive index of the material of the contact layer, and m is a natural number. 2. The optoelectronic component as claim in claim 1, wherein the interlayer is at least partly transmissive to the electromagnetic radiation generated in the active layer. 3. The optoelectronic semiconductor component as claimed in claim 2, wherein the interlayer contains a transparent conductive oxide. 4. The optoelectronic semiconductor component as claimed in claim 1, wherein the refractive index of the interlayer is approximately equal to the refractive index of the material from which the useful layer is formed, and/or approximately equal to the refractive index of the material from which the carrier substrate is formed. 5. The optoelectronic semiconductor component as claimed in claim 1, wherein the interlayer has a refractive index that is lower than the refractive index of the material from which the useful layer is formed. 6. The optoelectronic semiconductor component as claimed in claim 1, wherein the interlayer contains at least one of the following materials: SiO2, Al2O3, Ta2O5, HfO2. 7. The optoelectronic semiconductor component as claimed in claim 1, wherein the interlayer is electrically insulating. 8. The optoelectronic semiconductor component as claimed in claim 1, wherein the interlayer comprises or is a dielectric mirror. 9. The optoelectronic semiconductor component as claimed in claim 1, wherein the interlayer comprises or is a Bragg mirror. 10. The optoelectronic semiconductor component as claimed in claim 1, wherein the interlayer is a bonding layer. 11. The optoelectronic semiconductor component as claimed in claim 1, wherein the interlayer mediates an electrical contact between the carrier substrate and the component structure. 12. The optoelectronic semiconductor component as claimed in claim 1, wherein the distance between the interlayer and the coupling-out mirror is at most 10 μm.