IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0502057
(2009-07-13)
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등록번호 |
US-8097179
(2012-01-17)
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발명자
/ 주소 |
- Williams, Michael
- Barthman, Michael
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출원인 / 주소 |
|
대리인 / 주소 |
Cochran Freund & Young LLP
|
인용정보 |
피인용 횟수 :
3 인용 특허 :
17 |
초록
▼
A method for abating effluent from an etching process in one embodiment includes advancing etch gas product into a passageway of a gas connector in direct fluid communication with a first chamber of an interior void of an apparatus, advancing a gas from a gas source into said passageway of said gas
A method for abating effluent from an etching process in one embodiment includes advancing etch gas product into a passageway of a gas connector in direct fluid communication with a first chamber of an interior void of an apparatus, advancing a gas from a gas source into said passageway of said gas connector at the same time said etch gas product is being advanced into said passageway, and advancing humidified gas from a humidified gas source into a second chamber of said interior void.
대표청구항
▼
1. A method of abating an etch gas product generated from an etch apparatus, comprising: (a) placing said etch apparatus in fluid communication with an apparatus which includes (i) an enclosure which defines an interior void, (ii) a first partition having a first orifice defined therein, said first
1. A method of abating an etch gas product generated from an etch apparatus, comprising: (a) placing said etch apparatus in fluid communication with an apparatus which includes (i) an enclosure which defines an interior void, (ii) a first partition having a first orifice defined therein, said first partition being positioned within said interior void of said enclosure such that (A) said first partition divides said interior void into a first chamber and a second chamber and (B) said first orifice is in fluid communication with said first chamber and said second chamber, (iii) a gas connector which has (A) a passageway defined therethrough, said passageway having an inlet and an outlet and being in direct fluid communication with said first chamber of said interior void and (B) a gas port in fluid communication with said passageway, (iv) a gas dispenser in direct fluid communication with said second chamber of said interior void, (v) an exit port in fluid communication with said interior void of said enclosure, (vi) a gas source containing a gas, said gas source being in fluid communication with said gas port of said gas connector such that said gas contained by said gas source is advanced into said passageway of said gas connector, and (vii) a humidified gas source for providing a humidified gas, said humidified gas source being in fluid communication with said gas dispenser such that said humidified gas is advanced into said gas dispenser and directly into said second chamber of said interior void;(b) advancing said etch gas product into said passageway of said gas connector;(c) advancing said gas from said gas source into said passageway of said gas connector at the same time said etch gas product is being advanced into said passageway; and(d) advancing said humidified gas from said humidified gas source into said second chamber of said interior void. 2. The method of claim 1, further comprising: (e) placing an electrical heating element in thermal communication with said gas provided by said gas source; and(f) heating said gas provided by said gas source. 3. The method of claim 1, wherein: said apparatus further includes a second partition having a second orifice defined therein;said second partition is positioned within said second chamber;said first orifice has a first central axis;said second orifice has a second central axis; andsaid second central axis of said second orifice is offset relative to said first central axis of said first orifice. 4. The method of claim 1, further comprising: (g) removing said apparatus from said etch apparatus so that said apparatus is no longer in fluid communication with said etch apparatus; and(h) placing said etch apparatus in fluid communication with a replacement apparatus which includes (i) an enclosure which defines an interior void, (ii) a first partition having a first orifice defined therein, said first partition being positioned within said interior void of said enclosure such that (A) said first partition divides said interior void into a first chamber and a second chamber and (B) said first orifice is in fluid communication with said first chamber and said second chamber, (iii) a gas connector which has (A) a passageway defined therethrough, said passageway having an inlet and an outlet and being in direct fluid communication with said first chamber of said interior void and (B) a gas port in fluid communication with said passageway, (iv) a gas dispenser in direct fluid communication with said second chamber of said interior void, (v) an exit port in fluid communication with said interior void of said enclosure, (vi) a gas source containing a gas, said gas source being in fluid communication with said gas port of said gas connector such that said gas contained by said gas source is advanced into said passageway of said gas connector, and (vii) a humidified gas source for providing a humidified gas, said humidified gas source being in fluid communication with said gas dispenser such that said humidified gas is advanced into said gas dispenser and directly into said second chamber of said interior void. 5. The method of claim 1, wherein said etch gas product includes a first gaseous component, further comprising: (i) precipitating said first gaseous component in said first chamber of said interior void. 6. The method of claim 5, wherein said etch gas product also includes a second gaseous component, further comprising: (j) advancing said second gaseous component through said first orifice of said first partition; and(k) precipitating said second gaseous component in said second chamber of said interior void. 7. A method of abating effluent comprising: generating an etch gas product in an etching apparatus;advancing the etch gas product along a gas connector in fluid communication with the etching apparatus and in fluid communication with an abatement apparatus;introducing a first gas into the advancing etch gas product within the gas connector;mixing the introduced first gas and the advancing etch gas product within the gas connector;advancing the mixed first gas and etch gas product into an interior void of the abatement apparatus;precipitating a first portion of the mixed first gas and etch gas product within the interior void; andmixing a second gas with the mixed first gas and etch gas product within the interior void after the first portion has been precipitated. 8. The method of claim 7, further comprising: heating the first gas prior to introducing the first gas into the advancing etch gas product. 9. The method of claim 7, further comprising: humidifying the second gas prior to mixing the second gas with the mixed first gas and etch gas product within the interior void. 10. The method of claim 7, wherein: the interior void of the abatement apparatus comprises a first chamber and a second chamber;precipitating a first portion of the mixed first gas and etch gas product comprises precipitating the first portion of the mixed first gas and etch gas product within the first chamber; andmixing a second gas with the mixed first gas and etch gas product comprises mixing the second gas with the mixed first gas and etch gas product within the second chamber. 11. The method of claim 7, wherein the interior void of the abatement apparatus comprises a first chamber, a second chamber, and a third chamber, the method further comprising: advancing all but the first portion of the mixed first gas and etch gas product from the first chamber to the second chamber through a first orifice having a first central axis;precipitating a second portion of the mixed second gas, first gas and etch gas within the second chamber; andadvancing all but the first portion of the mixed first gas and etch gas product and the second portion of the mixed second gas, first gas and etch gas from the second chamber to the third chamber through a second orifice having a second central axis, wherein the first axis is not aligned with the second axis. 12. The method of claim 11, wherein the first central axis is aligned with a central longitudinal axis of the abatement apparatus. 13. A method of abating effluent comprising: generating an etch gas product in an etching apparatus;advancing the etch gas product along a gas connector in fluid communication with the etching apparatus and in fluid communication with an abatement apparatus;introducing a first gas into the advancing etch gas product within the gas connector;mixing the introduced first gas and the advancing etch gas product within the gas connector;advancing the mixed first gas and etch gas product into a first chamber of the abatement apparatus;precipitating all but a first remainder of the mixed first gas and etch gas product within the first chamber;advancing the first remainder from the first chamber to a second chamber of the abatement apparatus through a first orifice having a first central axis;humidifying a second gas;mixing the humidified second gas with the first remainder within the second chamber;precipitating all but a second remainder of the mixed humidified second gas and first remainder within the second chamber; andadvancing the second remainder from the second chamber to a third chamber of the abatement apparatus through a second orifice having a second central axis. 14. The method of claim 13, further comprising: heating the first gas prior to introducing the first gas into the advancing etch gas product. 15. The method of claim 13, wherein the first central axis and the second central axis are not aligned. 16. The method of claim 15, wherein the first central axis is aligned with a central longitudinal axis of the abatement apparatus.
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