초록 ▼

An SOI substrate and a manufacturing method of the SOI substrate, by which enlargement of the substrate is possible and its productivity can be increased, are provided. A step (A) of cutting a first single crystal silicon substrate to form a second single crystal silicon substrate which has a chip s

An SOI substrate and a manufacturing method of the SOI substrate, by which enlargement of the substrate is possible and its productivity can be increased, are provided. A step (A) of cutting a first single crystal silicon substrate to form a second single crystal silicon substrate which has a chip size; a step (B) of forming an insulating layer on one surface of the second single crystal silicon substrate, and forming an embrittlement layer in the second single crystal substrate; and a step (C) of bonding a substrate having an insulating surface and the second single crystal silicon substrate with the insulating layer therebetween, and conducting heat treatment to separate the second single crystal silicon substrate along the embrittlement layer, and forming a single crystal silicon thin film on the substrate having an insulating surface, are conducted.

대표청구항 ▼

1. A manufacturing method of an SOI substrate, comprising the steps of: (A) cutting a first single crystal silicon substrate to form a plurality of second single crystal silicon substrates each of which has a chip size;(B) forming an insulating layer on one surface of each of the plurality of second

1. A manufacturing method of an SOI substrate, comprising the steps of: (A) cutting a first single crystal silicon substrate to form a plurality of second single crystal silicon substrates each of which has a chip size;(B) forming an insulating layer on one surface of each of the plurality of second single crystal silicon substrates, and forming an embrittlement layer in each of the plurality of second single crystal silicon substrates; and(C) bonding a substrate having an insulating surface and the plurality of second single crystal silicon substrates with the insulating layer therebetween, and conducting heat treatment to separate the plurality of second single crystal silicon substrates along the embrittlement layer, and forming a plurality of single crystal silicon thin films over the substrate having an insulating surface,wherein each of the plurality of second single crystal silicon substrates is bonded to the substrate having an insulating surface so as to be separated from an adjacent second single crystal silicon substrate with a gap. 2. The manufacturing method of an SOI substrate according to claim 1, wherein each of the plurality of second single crystal silicon substrates is formed such that the chip size is in a range of from 10 mm square to 20 mm square. 3. The manufacturing method of an SOI substrate according to claim 1, wherein the substrate having an insulating surface is a glass substrate. 4. The manufacturing method of an SOI substrate according to claim 1, wherein a size of each of the plurality of single crystal silicon thin films corresponds to a size of a semiconductor chip including a wireless communication semiconductor device. 5. The manufacturing method of an SOI substrate according to claim 1, wherein a size of each of the plurality of single crystal silicon thin films corresponds to a size of a semiconductor chip including a semiconductor integrated circuit.