Bonded intermediate substrate and method of making same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/30
H01L-021/46
출원번호
US-0408239
(2006-04-21)
등록번호
US-8101498
(2012-01-24)
발명자
/ 주소
Pinnington, Thomas Henry
Zahler, James M.
Park, Young-Bae
Tsai, Charles
Ladous, Corinne
Atwater, Jr., Harry A.
Olson, Sean
출원인 / 주소
Pinnington, Thomas Henry
인용정보
피인용 횟수 :
13인용 특허 :
51
초록▼
An intermediate substrate includes a handle substrate bonded to a thin layer suitable for epitaxial growth of a compound semiconductor layer, such as a III-nitride semiconductor layer. The handle substrate may be a metal or metal alloy substrate, such as a molybdenum or molybdenum alloy substrate, w
An intermediate substrate includes a handle substrate bonded to a thin layer suitable for epitaxial growth of a compound semiconductor layer, such as a III-nitride semiconductor layer. The handle substrate may be a metal or metal alloy substrate, such as a molybdenum or molybdenum alloy substrate, while the thin layer may be a sapphire layer. A method of making the intermediate substrate includes forming a weak interface in the source substrate, bonding the source substrate to the handle substrate, and exfoliating the thin layer from the source substrate such that the thin layer remains bonded to the handle substrate.
대표청구항▼
1. A method of making a substrate, comprising: providing a sintered polycrystalline material handle substrate comprising a diffusion barrier layer which prevents diffusion of a sintering material out of the sintered polycrystalline material of the handle substrate, wherein the diffusion barrier laye
1. A method of making a substrate, comprising: providing a sintered polycrystalline material handle substrate comprising a diffusion barrier layer which prevents diffusion of a sintering material out of the sintered polycrystalline material of the handle substrate, wherein the diffusion barrier layer of silicon nitride or amorphous silicon carbide substantially encapsulates a top surface and a side surface of the handle substrate;transferring a thin single crystal layer of a first material which is suitable for epitaxial growth of a single crystal III-nitride semiconductor layer onto the handle substrate having a CTE which is closely CTE matched to a CTE of the III-nitride semiconductor layer;epitaxially growing a thick single crystal III-nitride semiconductor layer on the thin single crystal layer of the first material; andremoving the handle substrate. 2. The method of claim 1, further comprising removing the thin single crystal layer of the first material such that the thick single crystal III-nitride semiconductor layer forms a free-standing single crystal III-nitride substrate having a thickness of greater than 100 microns. 3. The method of claim 1, wherein the transferring a thin single crystal layer comprises: forming a weak interface in a GaN source substrate by implanting ions into an N-terminated surface of the GaN source substrate;bonding the N-terminated surface of the GaN source substrate to the handle substrate; andexfoliating a thin GaN single crystal layer from the source substrate such that the thin GaN exfoliated single crystal layer remains bonded to the handle substrate and a Ga-terminated surface of the thin GaN single crystal layer is exposed. 4. The method of claim 1, wherein the handle substrate comprises polycrystalline aluminum nitride. 5. The method of claim 1, wherein the thin single crystal layer comprises a single crystal GaN, SiC, or Si(111) layer. 6. The method of claim 1, wherein the handle substrate comprises polycrystalline aluminum nitride and the sintering material comprises yttria. 7. The method of claim 1, wherein the handle substrate comprises polycrystalline aluminum nitride and wherein the diffusion barrier layer comprises a layer of silicon nitride or amorphous silicon carbide located between the polycrystalline aluminum nitride and the thin single crystal layer of a first material. 8. The method of claim 1, wherein the handle substrate further comprises a bonding layer such that the diffusion barrier layer is located between the bonding layer and the sintered polycrystalline material. 9. The method of claim 1, wherein during the step of epitaxially growing a thick single crystal III-nitride semiconductor layer on the thin single crystal layer of the first material, the diffusion barrier covers all exposed surfaces of the handle substrate. 10. A method of making a substrate, comprising: providing a sintered polycrystalline material handle substrate comprising a diffusion barrier layer of silicon nitride, silicon oxi-nitride, aluminum nitride, aluminum oxi-nitride, alumina or silicon carbide substantially encapsulates a bonding surface of the handle substrate and a side surface or a bottom surface of the handle substrate which prevents diffusion of a sintering material out of the sintered polycrystalline material of the handle substrate;transferring a thin single crystal layer of a first material which is suitable for epitaxial growth of a single crystal III-nitride semiconductor layer onto the handle substrate having a CTE which is closely CTE matched to a CTE of the III-nitride semiconductor layer;epitaxially growing a thick single crystal III-nitride semiconductor layer on the thin single crystal layer of the first material; andremoving the handle substrate,wherein, prior to the step of transferring the single crystal layer, the handle substrate further comprises a bonding layer such that the diffusion barrier layer is located between the bonding layer and the sintered polycrystalline material. 11. The method of claim 10, wherein: the step of transferring the single crystal layer comprises: forming a weak interface in a source substrate;contacting the source substrate to the handle substrate;bonding the source substrate to the handle substrate; andexfoliating the thin single crystal layer from the source substrate such that the thin exfoliated single crystal layer remains bonded to the handle substrate;wherein, prior to contacting the source substrate to the handle substrate, the handle substrate comprises a bonding layer such that the diffusion barrier layer is located between the bonding layer and the sintered polycrystalline material. 12. A method of making a substrate, comprising: providing a sintered polycrystalline material handle substrate comprising a diffusion barrier layer of silicon nitride, amorphous silicon carbide, alumina, aluminum nitride, or titanium nitride substantially encapsulating a top surface and at least a portion of a side surface or a bottom surface of the handle substrate which prevents diffusion of a sintering material out of the sintered polycrystalline material of the handle substrate;transferring a thin single crystal layer of a first material which is suitable for epitaxial growth of a single crystal III-nitride semiconductor layer onto the handle substrate having a CTE which is closely CTE matched to a CTE of the III-nitride semiconductor layer;epitaxially growing a thick single crystal III-nitride semiconductor layer on the thin single crystal layer of the first material; andremoving the handle substrate. 13. The method of making a substrate of claim 12, wherein the diffusion barrier layer substantially encapsulates the top surface, the side surface and the bottom surface of the handle substrate.
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