IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0240186
(2008-09-29)
|
등록번호 |
US-8101501
(2012-01-24)
|
우선권정보 |
JP-2007-264051 (2007-10-10) |
발명자
/ 주소 |
- Ohnuma, Hideto
- Iikubo, Yoichi
- Yamazaki, Shunpei
|
출원인 / 주소 |
- Semiconductor Energy Laboratory Co., Ltd.
|
대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
5 인용 특허 :
32 |
초록
▼
To provide a method of manufacturing a semiconductor device, which prevents impurities from entering an SOI substrate. A source gas including one or plural kinds selected from a hydrogen gas, a helium gas, or halogen gas are excited to generate ions, and the ions are added to a bonding substrate to
To provide a method of manufacturing a semiconductor device, which prevents impurities from entering an SOI substrate. A source gas including one or plural kinds selected from a hydrogen gas, a helium gas, or halogen gas are excited to generate ions, and the ions are added to a bonding substrate to thereby form a fragile layer in the bonding substrate. Then, a region of the bonding substrate that is on and near the surface thereof, i.e., a region ranging from a shallower position than the fragile layer to the surface is removed by etching, polishing, or the like. Next, after attaching the bonding substrate to a base substrate, the bonding substrate is separated at the fragile layer to thereby form a semiconductor film over the base substrate. After forming the semiconductor film over the base substrate, a semiconductor element is formed using the semiconductor film.
대표청구항
▼
1. A method of manufacturing a semiconductor device comprising: forming a fragile layer in a semiconductor substrate by adding ions to the semiconductor substrate;removing a region of the semiconductor substrate, the region ranging from a shallower position than the fragile layer to a surface of the
1. A method of manufacturing a semiconductor device comprising: forming a fragile layer in a semiconductor substrate by adding ions to the semiconductor substrate;removing a region of the semiconductor substrate, the region ranging from a shallower position than the fragile layer to a surface of the semiconductor substrate; andattaching the semiconductor substrate to a base substrate and then separating the semiconductor substrate at the fragile layer, thereby, forming a semiconductor film over the base substrate. 2. The method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor substrate is a single crystal silicon substrate. 3. The method of manufacturing a semiconductor device according to claim 1, wherein the ions are added to the semiconductor substrate by an ion doping method. 4. The method of manufacturing a semiconductor device according to claim 1, wherein the removing step is performed by etching or polishing. 5. The method of manufacturing a semiconductor device according to claim 1, wherein the removed region of the semiconductor substrate is 1 nm to 5 nm. 6. A method of manufacturing a semiconductor device comprising: forming a fragile layer in a semiconductor substrate by adding ions to the semiconductor substrate;removing a region of the semiconductor substrate, the region ranging from a shallower position than the fragile layer to a surface of the semiconductor substrate;forming one or more insulating films over a surface of the semiconductor substrate that is exposed by the removing step; andattaching the semiconductor substrate to a base substrate with the one or more insulating films interposed therebetween and then separating the semiconductor substrate at the fragile layer, thereby, forming a semiconductor film over the base substrate. 7. The method of manufacturing a semiconductor device according to claim 6, wherein the semiconductor substrate is a single crystal silicon substrate. 8. The method of manufacturing a semiconductor device according to claim 6, wherein the ions are added to the semiconductor substrate by an ion doping method. 9. The method of manufacturing a semiconductor device according to claim 6, wherein the removing step is performed by etching or polishing. 10. The method of manufacturing a semiconductor device according to claim 6, wherein the removed region of the semiconductor substrate is 1 nm to 5 nm. 11. A method of manufacturing a semiconductor device comprising: forming an insulating film over a bonding substrate;forming a fragile layer in the bonding substrate by adding ions to the bonding substrate through the insulating film;removing a region of the insulating film after forming the fragile layer, the region ranging from a surface of the insulating film to a predetermined depth;attaching the insulating film directly to a base substrate after removing the region of the insulating film and then separating the bonding substrate at the fragile layer, thereby, forming a semiconductor film over the base substrate. 12. The method of manufacturing a semiconductor device according to claim 11, wherein the bonding substrate is a single crystal silicon substrate. 13. The method of manufacturing a semiconductor device according to claim 11, wherein the ions are added to the bonding substrate by an ion doping method. 14. The method of manufacturing a semiconductor device according to claim 11, wherein the removing step is performed by etching or polishing. 15. The method of manufacturing a semiconductor device according to claim 11, wherein the removed region of the insulating film is 1 nm to 5 nm. 16. A method of manufacturing a semiconductor device comprising: forming a first insulating film over a bonding substrate;forming a fragile layer in the bonding substrate by adding ions to the bonding substrate through the first insulating film;removing a region of the first insulating film after forming the fragile layer, the region ranging from a surface of the first insulating film to a predetermined depth;forming a second insulating film by a chemical vapor reaction over a surface of the first insulating film that is exposed by the removing step; andattaching the bonding substrate to a base substrate with the first insulating film and the second insulating film interposed therebetween and then separating the bonding substrate at the fragile layer, thereby, forming a semiconductor film over the base substrate. 17. The method of manufacturing a semiconductor device according to claim 16, wherein the bonding substrate is a single crystal silicon substrate. 18. The method of manufacturing a semiconductor device according to claim 16, wherein the ions are added to the bonding substrate by an ion doping method. 19. The method of manufacturing a semiconductor device according to claim 16, wherein the removing step is performed by etching or polishing. 20. The method of manufacturing a semiconductor device according to claim 16, wherein the removed region of the first insulating film is 1 nm to 5 nm.
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