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A SOI substrate includes a silicon substrate, a silicon oxide layer arranged on the silicon substrate, a silicon layer arranged on the silicon oxide layer, a gettering layer arranged in the silicon substrate, and a damaged layer formed of an impurity-doped region arranged in the silicon oxide layer.

A SOI substrate includes a silicon substrate, a silicon oxide layer arranged on the silicon substrate, a silicon layer arranged on the silicon oxide layer, a gettering layer arranged in the silicon substrate, and a damaged layer formed of an impurity-doped region arranged in the silicon oxide layer.

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1. A SOI substrate comprising: a silicon substrate;a silicon oxide layer arranged on the silicon substrate;a silicon layer arranged on the silicon oxide layer;a gettering layer arranged in the silicon substrate; anda damaged layer formed of an impurity-doped region in the silicon oxide layer so that

1. A SOI substrate comprising: a silicon substrate;a silicon oxide layer arranged on the silicon substrate;a silicon layer arranged on the silicon oxide layer;a gettering layer arranged in the silicon substrate; anda damaged layer formed of an impurity-doped region in the silicon oxide layer so that a metal contaminant in the silicon layer can pass to the silicon substrate through the damaged layer in the silicon oxide layer. 2. The SOI substrate according to claim 1, wherein the damaged layer is arranged in at least part of the silicon oxide layer in the in-plane direction and through the entirety of the silicon oxide layer in the thickness direction. 3. A SOI substrate comprising: a silicon substrate;a silicon oxide layer arranged on the silicon substrate;a silicon layer arranged on the silicon oxide layer;a gettering layer arranged in the silicon substrate; anda damaged layer formed of an impurity-doped region in the silicon oxide layer,wherein the damaged layer is arranged through the entirety of the silicon oxide layer in the in-plane direction and in at least part of the silicon oxide layer in the thickness direction, andthe damaged layer is arranged over the entire surface of the silicon substrate and in a portion of the silicon substrate in the thickness direction, the portion being adjacent to the silicon oxide layer. 4. The SOI substrate according to any one of claims 1 to 3, wherein the damaged layer has the gettering ability of trapping an impurity metal in the silicon layer. 5. The SOI substrate according to any one of claims 1 to 3, wherein the gettering layer is formed of a region into which one element selected from carbon, oxygen, argon, silicon, helium, phosphorus, arsenic, antimony, and boron is implanted. 6. The SOI substrate according to any one of claims 1 to 3, wherein the damaged layer is formed of a region into which one element selected from carbon, silicon, germanium, tin, helium, neon, argon, krypton, xenon, boron, aluminum, gallium, indium, nitrogen, phosphorus, arsenic, antimony, hydrogen, and oxygen, a compound including one of the elements, or a cluster including one of the elements is implanted. 7. A method for producing a SOI substrate, comprising the steps of: forming a silicon oxide layer on a surface of a first substrate composed of silicon;ion-implanting hydrogen or a rare-gas element into the first substrate to form a split layer;implanting an impurity into the silicon oxide layer to form a damaged layer of an impurity-doped region;preparing a second substrate including a gettering layer arranged inside the second substrate;bonding the second substrate to a surface of the silicon oxide layer adjacent to the damaged layer;separating the first substrate at the split layer; andpolishing a surface of the silicon layer of a portion of the first substrate left on the second substrate. 8. A method for producing a SOI substrate, comprising the steps of: forming a first silicon oxide layer on a first substrate composed of silicon;ion-implanting hydrogen or a rare-earth element into the first substrate to form a split layer;forming a second silicon oxide layer on a surface of a second substrate;forming a gettering layer inside the second substrate;implanting an impurity into the second silicon oxide layer or the second silicon oxide layer and a portion of the second substrate adjacent to the second silicon oxide layer to form a damaged layer of an impurity-doped region;bonding a surface of the second silicon oxide layer adjacent to the damaged layer to a surface of the first silicon oxide layer;separating the first substrate at the split layer;removing the exposed first silicon oxide layer and the exposed second silicon oxide layer; andpolishing a surface of the silicon layer of the first substrate left on the second substrate. 9. A solid-state image pickup device comprising: a silicon layer including a photoelectric conversion unit, a pixel transistor, and a peripheral circuit;a color filter layer arranged on a portion of the silicon layer located in a path of light incident on the photoelectric conversion unit;a condenser lens arranged on the color filter layer and configured to guide incident light to the photoelectric conversion unit;a wiring layer including a plurality of sublayers of wirings and an interlayer insulating film configured to cover the wirings, the wiring layer being arranged on a surface of the silicon layer opposite the surface adjacent to an incident light side;a support substrate arranged on the wiring layer;a damaged layer formed of an impurity-doped region arranged on a portion of a surface of the silicon layer located on an incident light side and outside the path of light incident on the photoelectric conversion unit; andan opening configured to reach the wirings in the wiring layer. 10. A method for producing a solid-state image pickup device, comprising the steps of: preparing a SOI substrate including a silicon substrate,a silicon oxide layer arranged on the silicon substrate,a silicon layer arranged on the silicon oxide layer,a gettering layer arranged in the silicon substrate, anda damaged layer formed of an impurity-doped region arranged in the silicon oxide layer,forming a photoelectric conversion unit, a pixel transistor, and a peripheral circuit in the silicon layer;forming a wiring layer on the silicon layer;laminating the wiring layer and a support substrate;removing the silicon substrate and the silicon oxide layer to expose a surface of the silicon layer;forming a color filter layer on a portion of the silicon layer located in a path of light incident on the photoelectric conversion unit; andforming a condenser lens on the color filter, the condenser lens being configured to guide incident light to the photoelectric conversion unit. 11. The method according to claim 10, wherein the damaged layer formed of the impurity-doped region in the SOI substrate extends to a portion of the silicon layer adjacent to the silicon oxide layer, andthe removing step of the silicon substrate and the silicon oxide layer to expose the surface of the silicon layer is performed in such a manner that the impurity-doped region is partially left on the surface of the silicon layer. 12. An image pickup apparatus comprising: a light collector configured to collect incident light;an image pickup unit including a solid-state image pickup device configured to receive light collected through the light collector and photoelectrically convert the light into a signal; anda signal processing unit configured to process the signal,wherein the solid-state image pickup device includesa silicon layer having a photoelectric conversion unit, a pixel transistor, and a peripheral circuit,a color filter layer arranged on a portion of the silicon layer located in a path of light incident on the photoelectric conversion unit,a condenser lens arranged on the color filter layer and configured to guide incident light to the photoelectric conversion unit,a wiring layer arranged on a surface of the silicon layer opposite the surface adjacent to an incident light side,a support substrate arranged on the wiring layer,a damaged layer formed of an impurity-doped region arranged on a portion of the surface of the silicon layer located on an incident light side and outside the path of light incident on the photoelectric conversion unit, andan opening configured to reach the wirings in the wiring layer and be used for connection of electrodes.