IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0537910
(2009-08-07)
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등록번호 |
US-8109130
(2012-02-07)
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발명자
/ 주소 |
- Dimeo, Jr., Frank
- Chen, Philip S. H.
- Neuner, Jeffrey W.
- Welch, James
- Stawasz, Michele
- Baum, Thomas H.
- King, Mackenzie E.
- Chen, Ing-Shin
- Roeder, Jeffrey F.
|
출원인 / 주소 |
- Advanced Technology Materials, Inc.
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대리인 / 주소 |
|
인용정보 |
피인용 횟수 :
3 인용 특허 :
101 |
초록
▼
A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based de
A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package so that the package becomes a platform of the detector.
대표청구항
▼
1. A gas sensor device comprising: first and second metal-containing posts;at least one nickel-containing metal sensor wire supported between said first and second metal-containing posts to provide a gas sensing structure adapted for contacting gas susceptible to presence of one or more target speci
1. A gas sensor device comprising: first and second metal-containing posts;at least one nickel-containing metal sensor wire supported between said first and second metal-containing posts to provide a gas sensing structure adapted for contacting gas susceptible to presence of one or more target species therein with which the at least one nickel-containing metal sensor wire is interactive to produce a response indicative of the presence of said one or more target species;a polymeric block element intermediately arranged between ends of the first metal-containing post and ends of the second metal-containing post, with the first and second metal-containing posts extending through the polymeric block element; anda base including a proximal surface, wherein the at least one nickel-containing metal sensor wire is orthogonally arranged relative to the proximal surface, and the base comprises a KF flange. 2. The gas sensor device of claim 1, wherein the at least one nickel-containing metal sensor wire is bonded at anchoring points to said first and second posts. 3. The gas sensor device of claim 1, wherein at least an outer surface of the at least one nickel-containing metal sensor wire consists of nickel. 4. The gas sensor device of claim 1, operatively arranged to sense one or more target gas species in or downstream of a process chamber used for manufacture of semiconductor devices. 5. The gas sensor device of claim 1, wherein the polymeric block element comprises polyimide. 6. The gas sensor device of claim 1, further comprising a monitoring element operatively coupled with the at least on nickel-containing metal sensor wire and adapted to generate a signal that varies in relation to concentration of said target species sensed by the at least one nickel-containing metal sensor wire. 7. A method of monitoring a fluid locus for the presence or change in concentration of at least one target species therein utilizing the gas sensor device of claim 1, said method comprising: (a) exposing fluid from said fluid locus to the at least one nickel-containing metal sensor wire;(b) monitoring said at least one property of the at least one nickel-containing metal sensor wire during step (a); and(c) responsively generating an output signal when the at least one nickel-containing metal sensor wire exhibits said change in at least one property of the at least one nickel-containing metal sensor wire, indicating the presence or change in concentration of a target species in the fluid locus. 8. The method of claim 7, wherein the fluid locus is disposed in or downstream of a process chamber used for manufacture of semiconductor devices. 9. The method of claim 8, wherein the fluid locus comprises a fluid stream in a processing facility adapted to manufacture semiconductor devices. 10. The method of claim 8, wherein at least an exterior surface of the at least one nickel-containing metal sensor wire consists of nickel. 11. The method of claim 8, wherein the output signal generated in step (c) is employed for one of the following: to control a process in which the target species is generated, to control one or more valves, or to effect an operational change in a process having the target species generated as a chemical reaction product. 12. The method of claim 8, wherein the gas sensor device is used to monitor etch effluent species during chamber cleaning, and the output signal is used to determine end-point of chamber cleaning. 13. The method of claim 8, wherein the gas sensor device is adapted to exhibit a change in at least one property thereof upon contact with target species comprising at least one of NF3, SiF4, C2F6, HF, F2, COF2, CIF3, IF3, chamber etch gases, and etch by-products. 14. A gas sensor device adapted to detect target species in a gas environment, the gas sensor device including: a sensing element comprising a sensing wire supported by a plurality of metal posts sheathed with an insulating material at all areas except at points of electrical contact with the sensing wire, wherein the sensing wire has at least an outer surface comprising nickel or nickel alloy, is adapted to contact the gas environment, is adapted to interact with said target species in said gas environment, and is adapted to responsively exhibit a monitorable change upon exposure to said target species, said monitorable change being correlative of concentration of said target species; anda monitoring element operatively coupled with the sensing element and adapted to generate a signal that varies in relation to concentration of said target species sensed by the sensing element. 15. The gas sensor device of claim 14, operatively arranged to sense one or more target gas species in or downstream of a process chamber used for manufacture of semiconductor devices. 16. A method of monitoring a fluid locus for the presence or change in concentration of at least one target species therein utilizing the gas sensor device of claim 14, said method comprising: (a) exposing fluid from said fluid locus to the sensing wire;(b) monitoring said at least one property of the sensing wire during step (a); and(c) responsively generating an output signal when the sensing wire exhibits said monitorable change, indicating the presence or change in concentration of a target species in the fluid locus. 17. The method of claim 16, wherein the fluid locus is disposed in or downstream of a process chamber used for manufacture of semiconductor devices. 18. The method of claim 16, wherein the fluid locus comprises a fluid stream in a processing facility adapted to manufacture semiconductor devices. 19. The method of claim 16, wherein at least an exterior surface of the at least one nickel- containing metal sensor wire consists of nickel. 20. The method of claim 16, wherein the output signal generated in step (c) is employed for one of the following: to control a process in which the target species is generated, to control one or more valves, or to effect an operational change in a process having the target species generated as a chemical reaction product. 21. The method of claim 16, wherein the gas sensor device is used to monitor etch effluent species during chamber cleaning, and the output signal is used to determine end-point of chamber cleaning. 22. The method of claim 16, wherein the gas sensor device is adapted to exhibit a monitorable change upon exposure to target species comprising at least one of NF3, SiF4, C2F6, HF, F2, COF2, CIF3, IF3, chamber etch gases, and etch by-products.
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