IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0219978
(2008-07-31)
|
등록번호 |
US-8109288
(2012-02-07)
|
우선권정보 |
JP-2003-163696 (2003-06-09) |
발명자
/ 주소 |
- Nagaoka, Hideki
- Koizumi, Hiroshi
- Ooyabu, Jun
- Shimazu, Tsuyoshi
- Endo, Hiroki
- Ito, Keiki
- Hayashi, Daisuke
|
출원인 / 주소 |
|
대리인 / 주소 |
Finnegan, Henderson, Farabow, Garrett & Dunner
|
인용정보 |
피인용 횟수 :
3 인용 특허 :
13 |
초록
▼
A partial pressure control system 45 includes two valves 2 which are branched from an operation gas supply pipe 44 and which variably control operation gas, pressure sensors 3 which are respectively connected to the each valves 2 in series and which detect pressure of the operation gas, and a contro
A partial pressure control system 45 includes two valves 2 which are branched from an operation gas supply pipe 44 and which variably control operation gas, pressure sensors 3 which are respectively connected to the each valves 2 in series and which detect pressure of the operation gas, and a controller 25 which proportionally controls the operation of the valves 2 based on detection result of the pressure sensors 3, thereby relatively controlling pressures P1 and P2 of the two valves. With this configuration, it is possible to reduce wastefull consumption of the operation gas, and to enhance the responsivity with respect to change of setting and the like.
대표청구항
▼
1. A shower plate which is formed into a disk-like shape for injecting an operation gas to a supply subject, wherein adjacent gas holes for injecting the operation gas are arranged at substantially equal space, and the gas holes are arranged in a form of a hexagon from a center to a periphery of the
1. A shower plate which is formed into a disk-like shape for injecting an operation gas to a supply subject, wherein adjacent gas holes for injecting the operation gas are arranged at substantially equal space, and the gas holes are arranged in a form of a hexagon from a center to a periphery of the shower plate corresponding to the supply subject, wherein the shower plate is used for a partial pressure control system which comprises: a plurality of pressure control units which is branched from an operation gas supply pipe and which controls a pressure of the operation gas;a plurality of pressure detecting units which is respectively connected to the plurality of pressure control units in series and which detects the pressure of the operation gas; anda control unit which proportionally controls an operation of the plurality of pressure control units based on a detection result of the plurality of pressure detecting units and which relatively controls an output pressure of the plurality of pressure control units. 2. The shower plate according to claim 1, wherein the shower plate is partitioned by a perfectly circular partition wall member and divided into a plurality of areas, the areas are respectively connected to the pressure control units of the partial pressure control system. 3. A semiconductor producing apparatus comprising: a chamber in which a supply subject is processed;a shower plate which includes a center shower and an edge shower and supplies an operation gas from the center shower and the edge shower to the chamber;an operation gas supply pipe which supplies the operation gas to the shower plate; anda partial pressure control system which is provided to control the operation gas supply pipe, and to introduce the operation gas to the center shower and the edge shower at a predetermined partial pressure ratio, wherein:the partial pressure control system includes: a plurality of pressure control units which are branched from the operation gas supply pipe for controlling a pressure of the operation gas;a plurality of pressure detecting units which are connected to each of the plurality of the pressure control units in series for respectively detecting a plurality of pressures of the operation gas; anda control unit which proportionally controls operation of the pressure control units based on detection results of the pressure detecting units and which relatively controls output pressures of the plurality of pressure control units. 4. The semiconductor producing apparatus according to claim 3, wherein the control unit specifies one of the plurality of the pressure control units as a control subject, and controls only the specified pressure control unit. 5. The semiconductor producing apparatus according to claim 4, wherein the control unit specifies one of the plurality of the pressure control units as the control unit based on a pressure ratio which is input to the partial pressure control system. 6. The semiconductor producing apparatus according to claim 5, wherein the plurality of pressure control units include a first pressure control unit and a second pressure control unit, andthe control unit specifies either the first pressure control unit or the second pressure control unit as the control subject depending upon whether the pressure ratio which is input to the partial pressure control system is equal to or greater than 1. 7. The semiconductor producing apparatus according to claim 6, wherein when the pressure ratio is obtained by dividing a pressure in the first pressure control unit by a pressure in the second pressure control unit,a target pressure of the first pressure control unit is expressed as a multiplication of the pressure ratio and the pressure of the second pressure control unit,a target pressure of the second pressure control unit is expressed as a quotient obtained by dividing the pressure in the first pressure control unit by the pressure ratio, andwhen the pressure ratio is smaller than 1, only the target pressure in the first pressure control unit is controlled, and when the pressure ratio is equal to or greater than 1, only the target pressure of the second pressure control unit is controlled. 8. The semiconductor producing apparatus according to claim 4, wherein the control unit specifies one of the plurality of pressure control units as the control subject based on the plurality of pressures detected by the plurality of pressure detecting units. 9. The semiconductor producing apparatus according to claim 3, further comprising: a zero point confirming unit,wherein when all of the pressure control units are fully opened, and supply of the operation gas is stopped, the zero point confirming unit confirms whether a pressure detected by at least one of the pressure detecting units is within a tolerance with respect to a zero point. 10. The semiconductor producing apparatus according to claim 3, wherein the shower plate includes a plurality of gas holes, adjacent gas holes being arranged at substantially regular intervals, and each of the plurality of gas holes being arranged in a form of hexagon from a center to a periphery of the shower plate corresponding to the supply subject. 11. The semiconductor producing apparatus according to claim 3, wherein the center shower and the edge shower are partitioned by a circular partition wall member and divided into a plurality of areas, andthe plurality of areas are respectively connected to the pressure control units. 12. The semiconductor producing apparatus according to claim 10, wherein the adjacent gas holes are arranged substantially in a form of triangle. 13. A shower plate which introduces an operation gas and is used for a semiconductor producing apparatus, the semiconductor producing apparatus comprising: a chamber in which a supply subject is processed;an operation gas supply pipe which supplies the operation gas to the chamber; anda partial pressure control system which is provided to control the operation gas supply pipe, and to introduce the operation gas to a gas leading section having a plurality of areas at a predetermined partial pressure ratio, wherein:the partial pressure control system includes: a plurality of pressure control units which are branched from an operation gas supply pipe for controlling a pressure of the operation gas;a plurality of pressure detecting units which are connected to each of the plurality of the pressure control units in series for respectively detecting a plurality of pressures of the operation gas; anda control unit which proportionally controls operation of the pressure control units based on detection results of the pressure detecting units and which relatively controls output pressures of the plurality of pressure control units;wherein the shower plate includes a plurality of gas holes, adjacent gas holes being arranged at substantially regular intervals, and each of the plurality of gas holes being arranged in a form of hexagon from a center to a periphery of the shower plate corresponding to the supply subject. 14. The shower plate according to claim 13, wherein the shower plate includes the center shower and the edge shower and are partitioned by a circular partition wall member and divided into a plurality of areas of the center shower and the edge shower. 15. The shower plate according to claim 13, wherein the adjacent gas holes are arranged substantially in a form of triangle.
※ AI-Helper는 부적절한 답변을 할 수 있습니다.