IPC분류정보
국가/구분 |
United States(US) Patent
등록
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국제특허분류(IPC7판) |
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출원번호 |
US-0846253
(2010-07-29)
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등록번호 |
US-8114789
(2012-02-14)
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발명자
/ 주소 |
- Seutter, Sean M.
- Yang, Michael X.
- Xi, Ming
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출원인 / 주소 |
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대리인 / 주소 |
Patterson & Sheridan, L.L.P.
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인용정보 |
피인용 횟수 :
0 인용 특허 :
188 |
초록
▼
A method of forming a material on a substrate is disclosed. In one embodiment, the method includes forming a tantalum nitride layer on a substrate disposed in a plasma process chamber by sequentially exposing the substrate to a tantalum precursor and a nitrogen precursor, followed by reducing a nitr
A method of forming a material on a substrate is disclosed. In one embodiment, the method includes forming a tantalum nitride layer on a substrate disposed in a plasma process chamber by sequentially exposing the substrate to a tantalum precursor and a nitrogen precursor, followed by reducing a nitrogen concentration of the tantalum nitride layer by exposing the substrate to a plasma annealing process. A metal-containing layer is subsequently deposited on the tantalum nitride layer.
대표청구항
▼
1. A method of forming a tantalum nitride film, comprising: forming a tantalum nitride layer on a substrate in a processing chamber by simultaneously pulsing a tantalum containing precursor and a nitrogen containing precursor in the processing chamber. 2. The method of claim 1, further comprising: r
1. A method of forming a tantalum nitride film, comprising: forming a tantalum nitride layer on a substrate in a processing chamber by simultaneously pulsing a tantalum containing precursor and a nitrogen containing precursor in the processing chamber. 2. The method of claim 1, further comprising: reducing a nitrogen concentration of the tantalum nitride layer by exposing the substrate to a plasma annealing process in the processing chamber. 3. The method of claim 2, wherein the plasma annealing process is performed with a plasma source material chemically non-reactive to the tantalum-nitride layer and having an atomic mass closer to nitrogen than tantalum. 4. The method of claim 2, wherein the plasma annealing process is performed with a plasma source material selected from argon (Ar), xenon (Xe), helium (He), neon (Ne), hydrogen (H2), nitrogen (N2), and combinations thereof. 5. The method of claim 2, wherein the plasma generated in the plasma annealing process is ignited by a radio frequency field. 6. The method of claim 1, further comprising: depositing a metal-containing layer on the tantalum nitride layer. 7. The method of claim 6, wherein the metal-containing layer comprises a metal selected from the group consisting of aluminum, copper, tungsten, tantalum and alloys thereof. 8. The method of claim 1, wherein the tantalum nitride layer has a thickness within a range from about 10 Å and about 50 Å. 9. The method of claim 1, wherein the nitrogen precursor contains a compound selected from the group consisting of nitrogen, ammonia, hydrazine, plasmas thereof, derivatives thereof and combinations thereof. 10. The method of claim 1, wherein the tantalum containing precursor is a tantalum based organo-metallic precursor selected from pentakis(ethylmethylamino) tantalum (PEMAT), pentakis(diethylamino) tantalum (PDEAT), pentakis(dimethylamino) tantalum (PDMAT) and derivatives thereof. 11. The method of claim 1, wherein the tantalum containing precursor is a tantalum based organo-metallic precursor selected from Ta(NMe2)5, Ta(NEt2)5, TBTDET and tantalum halides. 12. A method of forming a tantalum nitride film, comprising: simultaneously pulsing tantalum and nitrogen containing precursors into a processing chamber;forming a tantalum nitride layer on a substrate in the processing chamber from the pulsed tantalum containing and nitrogen containing precursors;reducing a nitrogen concentration of the formed tantalum nitride layer by exposing the substrate to a plasma annealing process in the processing chamber; anddepositing a metal-containing layer on the annealed tantalum nitride layer. 13. The method of claim 12, wherein the plasma annealing process is performed with a plasma source material chemically non-reactive to the tantalum-nitride layer and having an atomic mass closer to nitrogen than tantalum. 14. The method of claim 12, wherein the plasma annealing process is performed with a plasma source material selected from argon (Ar), xenon (Xe), helium (He), neon (Ne), hydrogen (H2), nitrogen (N2), and combinations thereof. 15. The method of claim 12, wherein the plasma generated in the plasma annealing process is ignited by a radio frequency field. 16. The method of claim 12, wherein the metal-containing layer comprises a metal selected from the group consisting of aluminum, copper, tungsten, tantalum and alloys thereof. 17. The method of claim 12, wherein the nitrogen precursor contains a compound selected from the group consisting of nitrogen, ammonia, hydrazine, plasmas thereof, derivatives thereof and combinations thereof. 18. The method of claim 12, wherein the tantalum containing precursor is a tantalum based organo-metallic precursor selected from pentakis(ethylmethylamino) tantalum (PEMAT), pentakis(diethylamino) tantalum (PDEAT), pentakis(dimethylamino) tantalum (PDMAT) and derivatives thereof. 19. The method of claim 1, wherein the tantalum containing precursor is a tantalum based organo-metallic precursor selected from Ta(NMe2)5, Ta(NEt2)5, TBTDET and tantalum halides. 20. A method of forming a tantalum nitride film, comprising: simultaneously flowing tantalum and nitrogen containing precursors into a processing chamber in pulses;forming a tantalum nitride layer on a substrate in the processing chamber from the pulsed tantalum containing and nitrogen containing precursors by reacting the tantalum containing precursor with the nitrogen containing precursor.
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