Flexible substrates having a thin-film barrier
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-023/29
B32B-001/04
출원번호
US-0980264
(2007-10-30)
등록번호
US-8115326
(2012-02-14)
발명자
/ 주소
Aitken, Bruce Gardiner
Bookbinder, Dana Craig
Garner, Sean Matthew
Quesada, Mark Alejandro
출원인 / 주소
Corning Incorporated
대리인 / 주소
Able, Kevin M.
인용정보
피인용 횟수 :
7인용 특허 :
73
초록▼
Methods and apparatus provide for: applying an inorganic barrier layer to at least a portion of a flexible substrate, the barrier layer being formed from a low liquidus temperature (LLT) material; and sintering the inorganic barrier layer while maintaining the flexible substrate below a critical tem
Methods and apparatus provide for: applying an inorganic barrier layer to at least a portion of a flexible substrate, the barrier layer being formed from a low liquidus temperature (LLT) material; and sintering the inorganic barrier layer while maintaining the flexible substrate below a critical temperature.
대표청구항▼
1. An apparatus, comprising: a flexible substrate;an inorganic barrier layer covering at least a portion of the flexible substrate, wherein the inorganic barrier layer comprises at least one of a tin fluorophosphate material, chalcogenide material, phosphate material, borate material, bismuth zinc b
1. An apparatus, comprising: a flexible substrate;an inorganic barrier layer covering at least a portion of the flexible substrate, wherein the inorganic barrier layer comprises at least one of a tin fluorophosphate material, chalcogenide material, phosphate material, borate material, bismuth zinc borate material, glass, borosilicate glass, a tellurite material, and a material including a composition of about 72 parts SiO2, about 1 part Al2O3, about 25 parts B2O3, about 0.5 parts Li2O, about 0.5 parts Na2O, and about 1 part K2O,wherein at least one of: (i) a modulus of the barrier layer is about 30 GPa to about 120 GPa; and (ii) a thickness of the barrier layer is less than about 10 um. 2. The apparatus of claim 1, wherein a liquidus temperature of the barrier layer is below about 1000 degrees C. 3. The apparatus of claim 1, wherein a liquidus temperature of the barrier layer is below about 600 degrees C. 4. The apparatus of claim 1, wherein a liquidus temperature of the barrier layer is below about 400 degrees C. 5. The apparatus of claim 1, further comprising: a device disposed on the barrier layer; andan encapsulation layer covering the device and terminating on the barrier layer, thereby forming an hermetic seal for the device. 6. The apparatus of claim 5, wherein the device is at least one of an electronic device, an optoelectronic device, an optical device, a light-emitting device, an OLED device, an organic semiconductor device, an LCD display device, a photovoltaic device, a thin-film sensor, an evanescent waveguide sensor, a food container, and a medicine container. 7. The apparatus of claim 1, wherein the flexible substrate and the inorganic barrier layer are capable of a bend radius less than at least one of: about 20 cm, about 10 cm, or about 1 cm. 8. The apparatus of claim 1, wherein the substrate comprises least one of a, polyimide, polyethylene naphthalate (PEN), polyethylene terephthalate (PET), polycarbonate (PC), polypropylene (PP), oriented polypropylene (OPP), polyethersulfone (PES), silicone, amorphous or crystalline polymer films, or silicone composites. 9. The apparatus of claim 1, wherein the inorganic barrier layer is patterned on the substrate. 10. The apparatus of claim 1, wherein the inorganic barrier layer does not cover an edge of the substrate.
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