초록 ▼

A metal line in a semiconductor device includes an insulation layer having trenches formed therein, a barrier metal layer formed over the insulation layer and the trenches, a metal layer formed over the barrier metal layer, wherein the metal layer fills the trenches, and an anti-galvanic corrosion l

A metal line in a semiconductor device includes an insulation layer having trenches formed therein, a barrier metal layer formed over the insulation layer and the trenches, a metal layer formed over the barrier metal layer, wherein the metal layer fills the trenches, and an anti-galvanic corrosion layer formed on an interface between the metal layer and the barrier metal layer.

대표청구항 ▼

1. A metal line in a semiconductor device, the metal line comprising: an insulation layer having trenches formed therein;a barrier metal layer formed over the insulation layer and the trenches;a metal layer formed over the barrier metal layer, wherein the metal layer fills the trenches; andan anti-g

1. A metal line in a semiconductor device, the metal line comprising: an insulation layer having trenches formed therein;a barrier metal layer formed over the insulation layer and the trenches;a metal layer formed over the barrier metal layer, wherein the metal layer fills the trenches; andan anti-galvanic corrosion layer formed on an interface between the metal layer and the barrier metal layer,wherein the anti-galvanic corrosion layer comprises an alloy layer including a material of the metal layer migrated from the metal layer. 2. The metal line of claim 1, wherein the anti-galvanic corrosion layer comprises an alloy layer including the material of the metal layer. 3. The metal line of claim 2, wherein the material of the metal layer comprises aluminum (Al). 4. The metal line of claim 2, wherein the alloy layer comprises an AlCu alloy layer. 5. The metal line of claim 1, wherein the barrier metal layer comprises a stack structure selected from a group consisting of titanium (Ti)/titanium nitride (TiN), Ti/TiN/Ti, tantalum (Ta)/tantalum nitride (TaN), Ta/TaN/Ta, Ti/titanium silicon nitride (TiSiN), and Ti/TiSiN/Ti.