초록 ▼

A Lorentz Magnetoresistive sensor having an extremely small lead width and lead spacing is disclosed. The sensor can be constructed by a novel fabrication method that allows the leads to be deposited in such a manner that lead width and spacing between the leads is determined by the as deposited thi

A Lorentz Magnetoresistive sensor having an extremely small lead width and lead spacing is disclosed. The sensor can be constructed by a novel fabrication method that allows the leads to be deposited in such a manner that lead width and spacing between the leads is determined by the as deposited thicknesses of the lead layers and electrically insulating spacer layers between the leads rather than by photolithography. Because the lead thicknesses and lead spacings are not defined photolithograhically, the lead thickness and lead spacing are not limited by photolithographic resolution limits.

대표청구항 ▼

1. A Lorentz magnetoresistive sensor, comprising: a magnetically active structure having first and second sides and having an air bearing surface, the magnetically active structure comprising a quantum well formed in a semiconductor heterostructure;a plurality of electrically conductive leads, elect

1. A Lorentz magnetoresistive sensor, comprising: a magnetically active structure having first and second sides and having an air bearing surface, the magnetically active structure comprising a quantum well formed in a semiconductor heterostructure;a plurality of electrically conductive leads, electrically connected with the second side of the magnetically active structure, each of the electrically conductive leads comprising a layer of electrically conductive material formed along a plane oriented perpendicular to the air bearing surface. 2. A sensor as in claim 1 having electrically insulating layers formed adjacent to each of the plurality of electrically conductive lead layers, the electrically insulating layers being formed along a plane perpendicular to the air bearing surface. 3. A sensor as in claim 2 wherein the electrically insulating layer comprises an oxide. 4. A sensor as in claim 2 wherein the electrically insulating layer comprises a nitride. 5. A sensor as in claim 1 wherein each of the electrically conductive leads comprises a material selected from the group consisting of: polysilicon, Au, TiSi2, and AuGe. 6. A sensor as in claim 1 wherein the magnetically active layer comprises a semiconductor. 7. A sensor as in claim 1 wherein the magnetically active layer comprises a material selected from the group consisting of Si, GaAs, InAs, InSb or an alloy of In, As and Sb. 8. A Lorentz magnetoresistive sensor, comprising: a magnetically active structure having first and second sides and having an air bearing surface extending between the first and second sides;an electrically conductive shunt structure electrically connected with the first side of the magnetically active layer; anda plurality of electrically conductive leads, electrically connected with the second side of the magnetically active structure, each of the electrically conductive leads comprising a layer of electrically conductive material formed along a plane oriented perpendicular to the air bearing surface. 9. A Hall magnetoresistive sensor, comprising: a magnetically active structure having first and second sides and having an air bearing surface extending between the first and second sides, the magnetically active structure comprising a quantum well formed in a semiconductor heterostructure;a plurality of electrically conductive leads, electrically connected with the second side of the magnetically active structure, each of the electrically conductive leads comprising a layer of electrically conductive material formed along a plane oriented perpendicular to the air bearing surface. 10. A Lorentz magnetoresistive sensor, comprising: a magnetically active structure having an electrical resistance that varies in response to an applied magnetic field;a plurality of electrically conductive lead layers connected with the magnetically active structure; anda plurality of electrically insulating layers, each of the electrically conductive lead layers being separated from an adjacent electrically conductive lead layer by one of the plurality of electrically insulating layers; and whereinthe spacing between the electrically conductive leads is determined by the thickness of the electrically insulating layer;wherein each of the electrically conductive lead layers comprises a layer of polysilicon formed alone a plane that is perpendicular to an air bearing surface of the EMR sensor. 11. A Lorentz magnetoresistive sensor as in claim 10 wherein each of the electrically conductive leads has a lead width that is defined by a thickness of that electrically conductive lead layer. 12. A Lorentz magnetoresistive sensor as in claim 10 wherein each of the electrically conductive lead layers comprises a layer of electrically conductive material formed along a plane that is perpendicular to an air bearing surface of the EMR sensor. 13. A Lorentz magnetoresistive sensor as in claim 10 wherein each of the electrically insulating layers comprises a layer of electrically insulating material formed along a plane that is perpendicular to an air bearing surface of the sensor. 14. A Lorentz magnetoresisive sensor as in claim 10 wherein each of the electrically insulating layers comprises a layer of oxide formed along a plane that is perpendicular to an air bearing surface of the sensor. 15. A Lorentz magnetoresistive sensor as in claim 10 wherein each of the electrically insulating layers comprises a layer of nitride formed along a plane that is perpendicular to an air bearing surface of the sensor.