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The present invention describes a method of CVI densification in which particular arrangements and mixtures of undensified porous substrates and partially densified porous substrates are arranged in particular ways in order to use the thermal characteristics of the partially densified porous substra

The present invention describes a method of CVI densification in which particular arrangements and mixtures of undensified porous substrates and partially densified porous substrates are arranged in particular ways in order to use the thermal characteristics of the partially densified porous substrates to better distribute heat throughout a CVI furnace and thereby improve densification.

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1. A method of densifying porous substrates using chemical vapour infiltration (“CVI”) in a CVI furnace, wherein the CVI furnace comprises a precursor gas preheating zone and a reaction chamber in which the porous substrates are densified, the CVI furnace comprising a bottom wall separating the prec

1. A method of densifying porous substrates using chemical vapour infiltration (“CVI”) in a CVI furnace, wherein the CVI furnace comprises a precursor gas preheating zone and a reaction chamber in which the porous substrates are densified, the CVI furnace comprising a bottom wall separating the precursor gas preheating zone and the reaction chamber, the bottom wall having a plurality of openings formed therethrough corresponding to a plurality of locations at which stacks of the porous substrates are positioned, the method of densifying comprising: arranging at least a first plurality of stacks of porous substrates in the reaction chamber, wherein stacks of porous substrates located at a periphery of the reaction chamber are undensified porous substrates, partially densified porous substrates, or a combination of undensified and partially densified porous substrates, and one or more stacks of partially densified substrates are located at a central location among the first plurality of stacks of porous substrates so that the porous substrates that are arranged at the periphery and at the central location of the reaction chamber have different densified states,and densifying the at least first plurality of stacks of porous substrates using a chemical vapour infiltration process. 2. The method of claim 1, wherein the undensified porous substrates have a bulk density range of 0.35 g/cc to 0.60 g/cc. 3. The method of claim 2, wherein the partially densified porous substrates have a bulk density range of 1.25 g/cc to 1.77 g/cc;the one or more stacks of partially densified substrates located at the central location among the first plurality of stacks of porous substrates has a total mass of about 1600 kg to about 8000 kg;a step is provided of spacing apart adjacent porous substrates in a given stack using a spacer or a shim;a step is provided of spacing apart adjacent porous substrates in a given stack using a unitary shim made from a woven wire mesh material;the unitary shim has an effective thickness of about 1 mm to about 6 mm;a step is provided of arranging a plurality of stacks of porous substrates on a respective one of a plurality of loading trays, and disposing the plurality of loading trays having a plurality of porous substrates arranged thereon in the reaction chamber. 4. The method of claim 3 wherein the partially densified porous substrates have been previously machined to reduce their thickness. 5. The method of claim 1, wherein the partially densified porous substrates have a bulk density range of 1.25 g/cc to 1.77 g/cc. 6. The method of claim 1, wherein the one or more stacks of partially densified substrates located at the central location among the first plurality of stacks of porous substrates has a total mass of about 1600 kg to about 8000 kg. 7. The method of claim 1, comprising spacing apart adjacent porous substrates in a given stack using a spacer or a shim. 8. The method of claim 7, comprising spacing apart adjacent porous substrates in a given stack using a unitary shim made from a woven wire mesh material. 9. The method of claim 8, wherein the unitary shim has an effective thickness of about 1 mm to about 6 mm. 10. The method of claim 1, comprising arranging a plurality of stacks of porous substrates on a respective one of a plurality of loading trays, and disposing the plurality of loading trays having a plurality of porous substrates arranged thereon in the reaction chamber. 11. The method of claim 1, wherein at least some of the stacks of porous substrates comprise alternating stacked undensified and partially densified substrates. 12. The method of claim 1 wherein the partially densified porous substrates have been previously machined to reduce their thickness. 13. The method of claim 1, wherein the substrates that are arranged at the center of the reaction chamber are more densified than the substrates that are arranged at the periphery of the reaction chamber. 14. The method of claim 1, wherein the partially densified substrates are arranged in the reaction chamber so that, during densification of the porous substrates, said partially densified substrates enable reduction of a temperature gradient in the reaction chamber. 15. The method of claim 14, wherein, during densification, said partially densified substrates radiate heat to surrounding porous substrates to reduce the temperature gradient in the reaction chamber.