최소 단어 이상 선택하여야 합니다.
최대 10 단어까지만 선택 가능합니다.
다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
NTIS 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
DataON 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Edison 바로가기다음과 같은 기능을 한번의 로그인으로 사용 할 수 있습니다.
Kafe 바로가기국가/구분 | United States(US) Patent 등록 |
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국제특허분류(IPC7판) |
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출원번호 | US-0840571 (2004-05-06) |
등록번호 | US-8133554 (2012-03-13) |
발명자 / 주소 |
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출원인 / 주소 |
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대리인 / 주소 |
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인용정보 | 피인용 횟수 : 1 인용 특허 : 332 |
Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces are disclosed herein. In one embodiment, a method includes depositing molecules of a gas onto a microfeature workpiece in the reaction chamber and selec
Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces are disclosed herein. In one embodiment, a method includes depositing molecules of a gas onto a microfeature workpiece in the reaction chamber and selectively irradiating a first portion of the molecules on the microfeature workpiece in the reaction chamber with a selected radiation without irradiating a second portion of the molecules on the workpiece with the selected radiation. The first portion of the molecules can be irradiated to activate the portion of the molecules or desorb the portion of the molecules from the workpiece. The first portion of the molecules can be selectively irradiated by impinging the first portion of the molecules with a laser beam or other energy source.
1. A method of forming features on a workpiece by depositing material onto the workpiece in a reaction chamber, the method comprising: depositing a monolayer or approximately a monolayer of molecules of a gas onto the workpiece in the reaction chamber, wherein the molecules of the gas comprise a plu
1. A method of forming features on a workpiece by depositing material onto the workpiece in a reaction chamber, the method comprising: depositing a monolayer or approximately a monolayer of molecules of a gas onto the workpiece in the reaction chamber, wherein the molecules of the gas comprise a plurality of first molecules of a first gas;selectively irradiating a first portion of the first molecules on the workpiece in the reaction chamber with a laser beam having a selected radiation without irradiating a second portion of the first molecules on the workpiece with the selected radiation, wherein selectively irradiating the first portion comprises desorbing the first portion of the first molecules from the workpiece;depositing second molecules of a second gas onto the second portion of the first molecules, the first and second gases having a different composition; andrepeating the depositing and the selectively irradiating to form a feature on the workpiece. 2. The method of claim 1 wherein: depositing the second molecules of the second gas comprises forming a layer of the second molecules on the second portion of the first molecules after desorbing the first portion of the first molecules. 3. The method of claim 1 wherein: depositing the second molecules of the second gas comprises forming a layer of the second molecules on the first molecules before selectively irradiating the first portion of the first molecules; andselectively irradiating the first portion of the first molecules comprises desorbing the first portion of the first molecules and a first portion of the second molecules from the workpiece. 4. The method of claim 1 wherein the first gas comprises a first precursor and a second precursor different than the first precursor, and wherein the method further comprises: flowing the first precursor into the reaction chamber;flowing the second precursor into the reaction chamber; andmixing the first and second precursors before depositing the first molecules of the first gas onto the workpiece. 5. The method of claim 1, further comprising exposing a first portion of the second molecules to the selected radiation without exposing a second portion of the second molecules. 6. The method of claim 1 wherein depositing the second molecules of the second gas occurs after selectively irradiating the first portion of the first molecules. 7. The method of claim 1 wherein: depositing the second molecules of the second gas comprises depositing the second molecules of the second gas onto the first and second portions of the first molecules before selectively irradiating the first portion of the first molecules; andthe method further comprises selectively irradiating a first portion of the second molecules on the workpiece with the selected radiation without selectively irradiating a second portion of the second molecules on the workpiece. 8. The method of claim 1 wherein depositing a monolayer or approximately a monolayer of molecules of a gas onto the workpiece includes adsorbing the molecules to a surface of the workpiece. 9. The method of claim 8 wherein the second portion of the molecules remain adsorbed to the surface of the workpiece after selectively irradiating the first portion of the molecules. 10. A method of forming features on a workpiece by depositing material onto the workpiece in a reaction chamber, the method comprising: depositing a monolayer of first molecules of a first gas onto the workpiece in the reaction chamber;selectively altering a first portion of the first molecules on the workpiece in a pattern using a laser beam, wherein selectively altering the first portion of the first molecules comprises desorbing the first portion of the first molecules from the workpiece;depositing second molecules of a second gas onto the second portion of the first molecules on the workpiece to form material with the first molecules, wherein the first and second gases have different compositions andrepeating the depositing and the selectively altering to form a feature on the workpiece. 11. The method of claim 10 wherein selectively altering the first portion of the first molecules comprises selectively irradiating the first portion of the first molecules. 12. A method of forming features on a workpiece by depositing material onto the workpiece in a reaction chamber, the method comprising: depositing a monolayer or approximately a monolayer of first molecules of a first gas onto the workpiece in the reaction chamber;directing a laser beam toward a first portion of the first molecules on the workpiece in the reaction chamber to desorb the first portion of the first molecules without desorbing a second portion of the first molecules;depositing second molecules of a second gas onto the second portion of the first molecules, wherein the first and second gases have different compositions; andrepeating the depositing and the directing to form a feature on the workpiece. 13. The method of claim 12, further comprising directing the laser beam toward a first portion of the second molecules to desorb the first portion of the second molecules without directing the laser beam toward a second portion of the second molecules. 14. The method of claim 12 wherein the first gas comprises a first precursor and a second precursor different than the first precursor, and wherein the method further comprises: flowing the first precursor into the reaction chamber;flowing the second precursor into the reaction chamber; andmixing the first and second precursors before depositing the first molecules of the first gas onto the workpiece. 15. The method of claim 12, further comprising removing the desorbed first portion of the first molecules from the reaction chamber before depositing the second molecules of the second gas. 16. The method of claim 12, further comprising removing the desorbed first portion of the first molecules from the reaction chamber while depositing the second molecules of the second gas. 17. The method of claim 12 wherein directing the laser beam occurs before depositing the second molecules of the second gas.
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