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Heating device for heating semiconductor wafers in thermal processing chambers 원문보기

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • F27B-005/14
  • F26B-003/30
출원번호 US-0574441 (2009-10-06)
등록번호 US-8138451 (2012-03-20)
발명자 / 주소
  • Gat, Arnon
  • Bogart, Bob
출원인 / 주소
  • Mattson Technology, Inc.
대리인 / 주소
    Dority & Manning, P.A.
인용정보 피인용 횟수 : 3  인용 특허 : 212

초록

An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly of light energy sources for emitting light energy onto a wafer. The light energy sources can be placed in various configurations. In accordance with the present invent

대표청구항

1. An apparatus for heat treating semiconductor wafers comprising: a thermal processing chamber adapted to contain a semiconductor wafer;a heating device in communication with the thermal processing chamber for heating a semiconductor wafer in the chamber, the heating device comprising a plurality o

이 특허에 인용된 특허 (212)

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  169. Tatah Abdelkrim, Repair of dielectric-coated electrode or circuit defects.
  170. McDiarmid James (San Jose CA), Rotary/linear actuator for closed chamber, and reaction chamber utilizing same.
  171. Ries Michael J. ; Hellwig Lance G. ; Rossi Jon A., Secondary edge reflector for horizontal reactor.
  172. Wilson Ronald H. (Schenectady NY) Stoll Robert W. (Schenectady NY) Calacone Michael A. (Watervliet NY), Selective chemical vapor deposition apparatus.
  173. Burnham Robert D. (Wheaton IL) Johnson Noble M. (Menlo Park CA), Selective disordering of well structures by laser annealing.
  174. Anthony ; Thomas R. ; Cline ; Harvey E. ; Fielding ; John O. ; Erikson ; Carl A., Semiconductor body heater.
  175. Nishizawa, Jun-ichi; Ohmi, Tadahiro, Semiconductor fabricating apparatus.
  176. Tanabe, Hiroshi; Kaneko, Setsuo, Semiconductor manufacturing apparatus and manufacturing method for thin film semiconductor device.
  177. Kubodera Masao (Yamanashi JPX) Kasai Shigeru (Yamanashi JPX) Osada Hatsuo (Yamanashi JPX), Semiconductor processing apparatus.
  178. Fiory Anthony T. (Summit NJ), Semiconductor processing technique, including pyrometric measurement of radiantly heated bodies and an apparatus for pra.
  179. Oda Masao (Amagasaki JPX) Kobayashi Toshiyuki (Amagasaki JPX) Kinoshita Yoshimi (Amagasaki JPX), Semiconductor producing apparatus.
  180. Hara, Akito; Sasaki, Nobuo, Semiconductor thin film forming method.
  181. Imahashi Issei (Yamanashi JPX), Semiconductor wafer heat treatment apparatus.
  182. Najm Habib N. (Dallas TX) Huang Steve S. (Richardson TX) Davis Cecil J. (Greenville TX) Matthews Robert T. (Plano TX), Semiconductor wafer heater with infrared lamp module with light blocking means.
  183. Crowley John L. (1691 Olive Ave. Fremont CA 94539) DeBolski Thomas J. (412 - 34th Ave. Santa Cruz CA 95062) Kermani Ahmad (1293 Ayala Dr. ; #4 Sunnyvale CA 94086) Lassig Stephan E. (830 Terra Bella D, Semiconductor wafer heating chamber.
  184. Anderson Roger N. (San Jose CA) Hey H. Peter W. (San Jose CA) Beinglass Israel (Sunnyvale CA) Venkatesan Mahalingam (San Jose CA), Semiconductor wafer process chamber with susceptor back coating.
  185. Anderson Roger N. (San Jose CA) Hey H. Peter W. (San Jose CA) Beinglass Israel (Sunnyvale CA) Venkatesan Mahalingam (San Jose CA), Semiconductor wafer process chamber with suspector back coating.
  186. Tatsuya Shimoda JP; Satoshi Inoue JP; Wakao Miyazawa JP, Separating method, method for transferring thin film device, thin film device, thin film integrated circuit device, and liquid crystal display device manufactured by using the transferring method.
  187. Fujikawa Yuichiro (Yamanashi-ken JPX) Hatano Tatsuo (Yamanashi-ken JPX) Murakami Seishi (Yamanashi-ken JPX), Shower head and film forming apparatus using the same.
  188. Burt Curtis L. (Glendale AZ) Steele John W. (Chandler AZ), Silicon epitaxial reactor and control method.
  189. Bowman Russell (San Jose CA) Anderson Roger N. (San Jose CA), Spoked susceptor support for enhanced thermal uniformity of susceptor in semiconductor wafer processing apparatus.
  190. Okamura Nobuyuki (Kawasaki JPX), Substrate heating mechanism.
  191. Kubodera Masao (Yamanashi JPX) Narushima Masaki (Yamanashi JPX) Ozawa Masahito (Yamanashi JPX) Kumagai Hiromi (Tokyo JPX) Yonenaga Tomihiro (Yamanashi JPX) Tanaka Sumi (Yamanashi JPX), Surface processing apparatus.
  192. Hellwig Lance G. (Jennings MO), Susceptor and baffle therefor.
  193. Kusmierz Marvin A. (Bay City MI) Pijaszek Robert F. (Bay City MI), Susceptor assembly.
  194. Singh Rajendra ; Sharangpani Rahul, System for depositing a material on a substrate using light energy.
  195. Tay Sing Pin ; Hu Yao Zhi, System for measuring the temperature of a semiconductor wafer during thermal processing.
  196. Higashira Hideki (Ikoma JPX), Temperature control system for lamp annealer.
  197. Nakagawa Toshiyuki (Fuchu JPX) Takahashi Nobuyuki (Fuchu JPX) Akimoto Takashi (Fuchu JPX), Temperature control system for semiconductor wafer or substrate.
  198. Boah John K. (Auburn NY), Temperature gradient zone melting utilizing infrared radiation.
  199. Wang David N. (Cupertino) White John M. (Hayward) Law Kam S. (Union City) Leung Cissy (Union City) Umotoy Salvador P. (Pittsburg) Collins Kenneth S. (San Jose) Adamik John A. (San Ramon) Perlov Ilya , Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planar.
  200. Moslehi Mehrdad M. (Palo Alto CA) Saraswat Krishna C. (Santa Clara County CA), Thermal/microwave remote plasma multiprocessing reactor and method of use.
  201. Adams David V. (San Jose) Anderson Roger N. (Santa Clara) Deacon Thomas E. (San Jose CA), Thermally processing semiconductor wafers at non-ambient pressures.
  202. Inoue, Satoshi; Shimoda, Tatsuya; Miyazawa, Wakao, Thin film device transfer method, thin film device, thin film integrated circuit device, active matrix board, liquid crystal display, and electronic apparatus.
  203. Itoh Hitoshi (Tokyo JPX), Thin-film depositing apparatus.
  204. Hauser John R. (Raleigh NC) Sorrell Furman Y. (Cary NC) Wortman Jimmie J. (Chapel Hill NC), Three-zone rapid thermal processing system utilizing wafer edge heating means.
  205. Nakai Satoshi (Kawasaki JPX), Uniform gas flow CVD apparatus.
  206. Nishizawa Junichi (6-16 ; Komegafukuro 1-chome Sendai-shi ; Miyagi-ken JPX) Abe Hitoshi (22-11 ; Midorigaoka 1-chome Sendai-shi ; Miyagi-ken JPX) Suzuki Soubei (1-3 ; Otamayashita Sendai-shi ; Miyagi, Use of infrared radiation and an ellipsoidal reflection mirror.
  207. Kato Susumu (Isawa-Cho JPX) Yamaguchi Hirofumi (Sudama-Cho JPX), Vacuum process apparaus.
  208. Anderson Roger N. (San Jose CA) Lindstrom Paul R. (Aptos CA) Johnson Wayne (Phoenix AZ), Variable rate distribution gas flow reaction chamber.
  209. Edwards Richard C. (Ringwood NJ) Kolesa Michael S. (Suffern NY) Ishikawa Hiroichi (Mahwah NJ), Wafer processing cluster tool batch preheating and degassing apparatus.
  210. Edwards Richard C. (Ringwood NJ) Kolesa Michael S. (Suffern NY) Ishikawa Hiroichi (Mahwah NJ), Wafer processing cluster tool batch preheating and degassing method.
  211. Adams David V. (San Jose CA) Anderson Roger N. (San Jose CA), Wafer reactor vessel window with pressure-thermal compensation.
  212. Nishimura Tadashi (Itami JPX) Sugahara Kazuyuki (Itami JPX) Kusunoki Shigeru (Itami JPX) Inoue Yasuo (Itami JPX), Zone melting apparatus for monocrystallizing semiconductor layer on insulator layer.

이 특허를 인용한 특허 (3)

  1. Ranish, Joseph M.; Hunter, Aaron Muir; Soules, Thomas F.; Rubenchik, Alexander M., Apparatus and methods for rapid thermal processing.
  2. Brendel, Gerhard, Device for coating parts including a movable receiver in which a dispenser device and an IR emitter device are located.
  3. Kim, Young-Hoo; Lee, Il-Sang; Ko, Yong-sun; Ryu, Chang-Gil; Lee, Kun-Tack; Lee, Hyo-San, Spot heater and device for cleaning wafer using the same.

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