Methods for optically enhanced holographic interferometric testing for test and evaluation of semiconductor devices and materials
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
G01B-011/02
G01B-009/021
출원번호
US-0779749
(2010-05-13)
등록번호
US-8139228
(2012-03-20)
발명자
/ 주소
Pfaff, Paul L.
출원인 / 주소
Attofemto, Inc.
대리인 / 주소
Davis Wright Tremaine LLP
인용정보
피인용 횟수 :
6인용 특허 :
98
초록▼
Improved methods and systems for inspection imaging for holographic or interferometric semiconductor test and evaluation through all phases of manufacture. Specifically, systems and methods are disclosed for extending the range of optical holographic interferometric inspection for evaluating microel
Improved methods and systems for inspection imaging for holographic or interferometric semiconductor test and evaluation through all phases of manufacture. Specifically, systems and methods are disclosed for extending the range of optical holographic interferometric inspection for evaluating microelectronic devices and determining the interplay of electromagnetic signals and dynamic stresses to the semiconductor material are provided in which an enhanced imaging method provides continuous and varying of the magnification of the optical holographic interferometric images over a plurality of interleaved optical pathways and imaging devices. Analysis of one or more holographic interference patterns displays internal and external stresses and the various effects of such stresses upon the operating characteristics of features within the features, interior structures, or internal surfaces of the semiconductor material or wafer under test.
대표청구항▼
1. A method for optically testing and displaying internal stresses of semiconductor devices or wafers while being manufactured, the device or wafer under test being comprised a semiconductor conductor material having an interior surface and interior structures, comprising: using a holographic optica
1. A method for optically testing and displaying internal stresses of semiconductor devices or wafers while being manufactured, the device or wafer under test being comprised a semiconductor conductor material having an interior surface and interior structures, comprising: using a holographic optical interference system with at least one light source providing at least one light beam of coherent wavelength with a wavelength to which the semiconductor material is at least semi-transparent or transparent, splitting the light beam into a pair of beams, comprising a reference beam and an object beam, imposing the object beam on the exterior surface of the semiconductor material to generate a reflected object beam reflected from the interior structures of the semiconductor material, and interior surfaces of the semiconductor material to generate a reflected beam reflected from the interior structures of the semiconductor material, adjusting the angle of incidence of the reference beam relative to the object beam between a plurality of angles with the semiconductor material being in a different state for each angle of the reference beam, imposing the reflected object beam and the reference beam onto one or more detection devices to create a plurality of interference patterns of the reflected object beam with the reflected reference beam, one interference pattern at each of the plurality of angles of the reference beam, varying the magnification of the reference beam relative to the magnification of the object beam, and wherein one or more detection devices physically records or digitally stores the plurality of interference patterns, and comparing the plurality of interference patterns to one another to determine and display stress or the effects of such stress and interior structure characteristics within the semiconductor material, device or wafer. 2. The method of claim 1, wherein at least one of the states of the semiconductor material is an external stress, the external stress or the effects of said stress being produced by imposing incident electric or electromagnetic field or signals upon the semiconductor material or device. 3. The method of claim 1, wherein at least one of the states of the semiconductor material is an external stress, the external stress or the effects of said stress being produced by imposing incident voltages or chemical solutions upon the semiconductor material or device. 4. The method of claim 1, wherein at least one of the states of the semiconductor material is an external stress, the external stress or the effects of said stress being produced by imposing incident radio waves upon the semiconductor material or device. 5. The method of claim 1, wherein at least one or more detector devices records a plurality of interference patterns of a plurality of one or more external stresses or the effects of said stresses which produce a change in the state of the refractive indexes or birefringence states of the semiconductor material or device. 6. The method of claim 5, wherein at least one of the states of the semiconductor material is a plurality of one or more external stresses or the effects of said stresses produced by imposing a plurality of electromagnetic radiation stresses or the effects of said stresses of one or more beams of differing wavelengths shorter than the characteristic threshold for the semiconductor material or device. 7. The method of claim 5, wherein at least one of the states of the semiconductor material is an external stress or the effects of said stress detected or displayed by means of triggering the recording or storage device of a plurality of interference patterns in synchrony with the imposition of a plurality of one or more external or internal stresses or the effects of said stresses or electromagnetic signals or the effects of said signals or external stresses acting upon the semiconductor material or device. 8. The method of claim 7, wherein one or more recording devices simultaneously detect the plurality of interference patterns of one or more external or internal stresses. 9. The method of claim 5, wherein one or more beams incident to the semiconductor material or device and the interference pattern of each beam are recorded or detected by one or more recording or detector devices. 10. The method of claim 9, wherein the interference pattern of one or more beams are recorded independently of each other and combined together to enhance and display the visibility or contrast of the interference pattern with respect to a feature of the semiconductor material or device. 11. The method of claim 1, wherein the magnification of the reference beam is adjusted to be converging or diverging to the object beam to enhance the visibility or contrast of the interference pattern with respect to a feature of the semiconductor material or device. 12. The method of claim 1, wherein the angles of the reference beam are adjusted to be converging or diverging to the object beam to enhance the visibility or contrast of the interference pattern with respect to a feature of the semiconductor material or device. 13. The method of claim 12, wherein automatic digital signal or image processing displays the plurality of one or more image detection devices simultaneously monitoring the feature or internal surface. 14. The method of claim 12, wherein automatic digital signal or image processing processes the plurality of interference patterns and displays the plurality of internal stresses or the effects of said stresses within the semiconductor material or feature or wafer at a desired stage of manufacture. 15. The method of claim 12, wherein the detection device records or digitally stores changes in the plurality of interference patterns to characterize and display at least one internal stress or the effects of said stress. 16. The method of claim 12, wherein the interference patterns are compared by digital signal or image processing with an electronic circuit coordinate map to determine and display at least one internal stress or the effects of said stress of a feature or an interior surface or structures within the semiconductor material or external stress or stresses or the effects of said stress or stresses acting upon the semiconductor material or wafer. 17. The method of claim 16, wherein the comparison of one or more interference patterns displays internal stresses or the effects of said stresses or the effect of electromagnetic signals and operating characteristics of features within the feature or interior structures or internal surfaces of the semiconductor material or wafer. 18. The method of claim 16, wherein by recording or comparing the interference pattern of at least one or more stresses or the effects of said stresses acting upon the semiconductor material or wafer the interferometric pattern or patterns of differing stress states is determined or displayed. 19. The method of claim 16, wherein by recording at least one or more interference patterns of at least one or a plurality of internal stresses or the effects of said stresses recorded at one or more different angle, for the same object beam, a plurality of interference patterns is obtained or displayed of at least one or a plurality of internal stresses or the effects of said stresses within the semiconductor material or wafer. 20. The method of claim 19, wherein analysis of the plurality of interference patterns detected or recorded at different angles generates two- or three-dimensional information of at least one internal stress acting upon an exterior surface or interior structure or feature within the semiconductor material or wafer. 21. The method of claim 20, wherein analysis of the plurality of interference patterns detected or recorded at different magnifications at each angle generates two- or three-dimensional information of at least one internal stress or the effects of said stress acting upon an exterior surface or interior structure or feature within the semiconductor material or wafer. 22. The method of claim 1, wherein the diameter of the object beam is selected to produce a spatial region on the exterior surface of the semiconductor larger than the focal or spot size of a single wavelength of the object beam. 23. The method of claim 1, wherein at least one or more detection devices physically records or digitally stores the plurality of interference patterns. 24. The method of claim 1, wherein at least one of the states of the semiconductor material is an external stress, the external stress or the effects of said stress being produced by imposing incident radio waves acting upon the semiconductor material. 25. The method of claim 1, wherein at least one of the states of the semiconductor material is an external stress, the external stress or the effects of said stress being produced by imposing incident x-rays acting upon the semiconductor material. 26. The method of claim 1, wherein at least one of the states of the semiconductor material is an external stress, the external stress or the effects of said stress being produced by incident magnetic fields acting upon the semiconductor material. 27. The method of claim 1, wherein at least one of the states of the semiconductor material is an external stress, the external stress or the effects of said stress being produced by incident chemical solutions acting upon the semiconductor material. 28. The method of claim 1, wherein the magnification of the reference beam is adjusted to be converging or diverging to the object beam to enhance the visibility or contrast of the interference pattern with respect to a feature of the semiconductor material or device, and wherein automatic digital signal or image processing displays the plurality of one or more image detection devices simultaneously monitoring the feature or internal surface. 29. The method of claim 1, wherein the magnification of the reference beam is adjusted to be converging or diverging to the object beam to enhance the visibility or contrast of the interference pattern with respect to a feature of the semiconductor material or device, and wherein automatic digital signal or image processing processes the plurality of interference patterns and displays the plurality of internal stresses or the effects of said stresses within the semiconductor material or feature or wafer at any desired stage of manufacture. 30. The method of claim 1, wherein the magnification of the reference beam is adjusted to be converging or diverging to the object beam to enhance the visibility or contrast of the interference pattern with respect to a feature of the semiconductor material or device, and wherein the detection device records or digitally stores changes in the plurality of interference patterns to characterize and display at least one internal stress or the effects of said stress. 31. The method of claim 1, wherein the magnification of the reference beam is adjusted to be converging or diverging to the object beam to enhance the visibility or contrast of the interference pattern with respect to a feature of the semiconductor material or device, and wherein the interference patterns are compared by digital signal or image processing with an electronic circuit coordinate map to determine and display at least one internal stress or the effects of said stress of a feature or an interior surface or structures within the semiconductor material or external stress or stresses acting upon the semiconductor material or wafer. 32. A method for optically testing and displaying internal stresses of semiconductor devices or wafers while being manufactured, the device or wafer under test being comprised of a semiconductor material having an exterior surface and interior structures, the method comprising, imposing the object beam on the exterior surface of the semiconductor material to generate a reflected object beam from the interior structures of the semiconductor material, and interior surfaces of the semiconductor material to generate a reflected beam from the interior surfaces of the semiconductor material, adjusting the angle of a reference beam relative to an object beam between a plurality of angles with the semiconductor material being in a different state for each angle of the reference beam, imposing the reflected object beam and the reference beam onto a detection device to create a plurality of interference patterns of the reflected object beam with the reference beam, one at each of the plurality of angles of the reference beam, and comparing the plurality of interference patterns to one another to determine characteristics within the semiconductor material.
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