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A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer and a first electrode are formed at the one surface side. After bonding the first electrode and a supporting substrate, the sin

A fragile layer is formed in a region at a depth of less than 1000 nm from one surface of a single crystal semiconductor substrate, and a first impurity semiconductor layer and a first electrode are formed at the one surface side. After bonding the first electrode and a supporting substrate, the single crystal semiconductor substrate is separated using the fragile layer or the vicinity as a separation plane, thereby forming a first single crystal semiconductor layer over the supporting substrate. An amorphous semiconductor layer is formed on the first single crystal semiconductor layer, and a second single crystal semiconductor layer is formed by heat treatment for solid phase growth of the amorphous semiconductor layer. A second impurity semiconductor layer having a conductivity type opposite to that of the first impurity semiconductor layer and a second electrode are formed over the second single crystal semiconductor layer.

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1. A method of manufacturing a photoelectric conversion device, comprising the steps of: irradiating a first single crystal semiconductor layer with a laser beam to form an unevenness on a surface of the first single crystal semiconductor layer, wherein the first single crystal semiconductor layer i

1. A method of manufacturing a photoelectric conversion device, comprising the steps of: irradiating a first single crystal semiconductor layer with a laser beam to form an unevenness on a surface of the first single crystal semiconductor layer, wherein the first single crystal semiconductor layer is provided over a first electrode with a first impurity semiconductor layer interposed therebetween;forming an amorphous semiconductor layer on the first single crystal semiconductor layer after irradiating the first single crystal semiconductor layer with the laser beam;performing heat treatment for solid phase growth of the amorphous semiconductor layer so that a second single crystal semiconductor layer is formed;forming a second impurity semiconductor layer having a conductivity type opposite to a conductivity type of the first impurity semiconductor layer at a surface side of the second single crystal semiconductor layer; andforming a second electrode over the second impurity semiconductor layer. 2. The method of manufacturing a photoelectric conversion device, according to claim 1, wherein the irradiating step is performed by using a phase shift mask. 3. The method of manufacturing a photoelectric conversion device, according to claim 1, wherein the unevenness on the surface of the first single crystal semiconductor layer is a periodic unevenness. 4. The method of manufacturing a photoelectric conversion device, according to claim 1, wherein the unevenness has an average surface roughness of 7 nm to 10 nm and a maximum peak-to-valley height of 300 nm to 400 nm. 5. The method of manufacturing a photoelectric conversion device, according to claim 1, wherein a total thickness of the first single crystal semiconductor layer and the second single crystal semiconductor layer is 800 nm or more. 6. The method of manufacturing a photoelectric conversion device, according to claim 1, wherein the first single crystal semiconductor layer is formed to be of p type by using a p type single crystal semiconductor substrate, andwherein the second single crystal semiconductor layer is formed to be intrinsic by using an intrinsic semiconductor as the amorphous semiconductor layer. 7. The method of manufacturing a photoelectric conversion device, according to claim 1, wherein the first impurity semiconductor layer is of p type while the second impurity semiconductor layer is of n type. 8. A method of manufacturing a photoelectric conversion device, comprising the steps of: providing a single crystal semiconductor substrate wherein the single crystal semiconductor substrate includes a fragile layer therein and a first impurity semiconductor layer at one surface side thereof and the single crystal semiconductor substrate is provided with a first electrode on the one surface side thereof;bonding the first electrode and a supporting substrate to each other;separating the single crystal semiconductor substrate using the fragile layer or vicinity of the fragile layer as a separation plane so that a first single crystal semiconductor layer is formed over the supporting substrate;irradiating the first single crystal semiconductor layer with a laser beam to form an unevenness on a surface of the first single crystal semiconductor layer;forming an amorphous semiconductor layer on the first single crystal semiconductor layer after irradiating the first single crystal semiconductor layer with the laser beam, wherein the first single crystal semiconductor layer is located between the amorphous semiconductor layer and the first electrode;performing heat treatment for solid phase growth of the amorphous semiconductor layer so that a second single crystal semiconductor layer is formed;forming a second impurity semiconductor layer having a conductivity type opposite to a conductivity type of the first impurity semiconductor layer at a surface side of the second single crystal semiconductor layer; andforming a second electrode over the second impurity semiconductor layer. 9. The method of manufacturing a photoelectric conversion device, according to claim 8, wherein the irradiating step is performed by using a phase shift mask. 10. The method of manufacturing a photoelectric conversion device, according to claim 8, wherein the unevenness on the surface of the first single crystal semiconductor layer is a periodic unevenness. 11. The method of manufacturing a photoelectric conversion device, according to claim 8, wherein the unevenness has an average surface roughness of 7 nm to 10 nm and a maximum peak-to-valley height of 300 nm to 400 nm. 12. The method of manufacturing a photoelectric conversion device, according to claim 8, wherein the fragile layer is formed in a region at a depth of less than 1000 nm from the one surface thereof. 13. The method of manufacturing a photoelectric conversion device, according to claim 8, wherein an insulating layer is formed over the first electrode, and the first electrode and the supporting substrate are bonded to each other with the insulating layer interposed therebetween. 14. The method of manufacturing a photoelectric conversion device, according to claim 8, wherein the fragile layer is formed by irradiating the single crystal semiconductor substrate with ions or cluster ions generated from a source gas containing hydrogen. 15. The method of manufacturing a photoelectric conversion device, according to claim 14, wherein the single crystal semiconductor substrate is irradiated with the ions or cluster ions in such a manner that the ions or cluster ions which are generated are accelerated by voltage without mass separation. 16. The method of manufacturing a photoelectric conversion device, according to claim 14, wherein the ions or cluster ions contain a larger proportion of H3+ ions with respect to total amount of the ions or cluster ions with which irradiation is performed. 17. The method of manufacturing a photoelectric conversion device, according to claim 8, wherein a total thickness of the first single crystal semiconductor layer and the second single crystal semiconductor layer is 800 nm or more. 18. The method of manufacturing a photoelectric conversion device, according to claim 8, wherein the first single crystal semiconductor layer is formed to be of p type by using a p type single crystal semiconductor substrate as the single crystal semiconductor substrate, andwherein the second single crystal semiconductor layer is formed to be intrinsic by using an intrinsic semiconductor as the amorphous semiconductor layer. 19. The method of manufacturing a photoelectric conversion device, according to claim 8, wherein the first impurity semiconductor layer is of p type while the second impurity semiconductor layer is of n type. 20. The method of manufacturing a photoelectric conversion device, according to claim 8, wherein the first impurity semiconductor layer is formed at the one surface side of the single crystal semiconductor substrate by adding an impurity element imparting one conductivity type to the single crystal semiconductor substrate. 21. A method of manufacturing a photoelectric conversion device, comprising the steps of: providing a single crystal semiconductor substrate wherein the single crystal semiconductor substrate includes a fragile layer therein and a first impurity semiconductor layer at one surface side thereof and the single crystal semiconductor substrate is provided with a first electrode on the one surface side thereof;bonding the first electrode and a supporting substrate to each other;separating the single crystal semiconductor substrate using the fragile layer or vicinity of the fragile layer as a separation plane so that a first single crystal semiconductor layer is formed over the supporting substrate;irradiating the first single crystal semiconductor layer with a laser beam to form an unevenness on a surface of the first single crystal semiconductor layer;forming a first amorphous semiconductor layer on the first single crystal semiconductor layer after irradiating the first single crystal semiconductor layer with the laser beam, wherein the first single crystal semiconductor layer is located between the first amorphous semiconductor layer and the first electrode;forming a second amorphous semiconductor layer having a conductivity type opposite to a conductivity type of the first impurity semiconductor layer on the first amorphous semiconductor layer;performing heat treatment for solid phase growth of the first amorphous semiconductor layer and the second amorphous semiconductor layer so that a second single crystal semiconductor layer and a second impurity semiconductor layer are formed; andforming a second electrode over the second impurity semiconductor layer. 22. The method of manufacturing a photoelectric conversion device, according to claim 21, wherein the irradiating step is performed by using a phase shift mask. 23. The method of manufacturing a photoelectric conversion device, according to claim 21, wherein the unevenness on the surface of the first single crystal semiconductor layer is a periodic unevenness. 24. The method of manufacturing a photoelectric conversion device, according to claim 21, wherein the unevenness has an average surface roughness of 7 nm to 10 nm and a maximum peak-to-valley height of 300 nm to 400 nm. 25. The method of manufacturing a photoelectric conversion device, according to claim 21, wherein the fragile layer is formed in a region at a depth of less than 1000 nm from the one surface thereof. 26. The method of manufacturing a photoelectric conversion device, according to claim 21, wherein an insulating layer is formed over the first electrode, and the first electrode and the supporting substrate are bonded to each other with the insulating layer interposed therebetween. 27. The method of manufacturing a photoelectric conversion device, according to claim 21, wherein the fragile layer is formed by irradiating the single crystal semiconductor substrate with ions or cluster ions generated from a source gas containing hydrogen. 28. The method of manufacturing a photoelectric conversion device, according to claim 27, wherein the single crystal semiconductor substrate is irradiated with the ions or cluster ions in such a manner that the ions or cluster ions which are generated are accelerated by voltage without mass separation. 29. The method of manufacturing a photoelectric conversion device, according to claim 27, wherein the ions or cluster ions contain a larger proportion of H3+ ions with respect to total amount of the ions or cluster ions with which irradiation is performed. 30. The method of manufacturing a photoelectric conversion device, according to claim 21, wherein a total thickness of the first single crystal semiconductor layer and the second single crystal semiconductor layer is 800 nm or more. 31. The method of manufacturing a photoelectric conversion device, according to claim 21, wherein the first single crystal semiconductor layer is formed to be of p type by using a p type single crystal semiconductor substrate as the single crystal semiconductor substrate, andwherein the second single crystal semiconductor layer is formed to be intrinsic by using an intrinsic semiconductor as the first amorphous semiconductor layer. 32. The method of manufacturing a photoelectric conversion device, according to claim 21, wherein the first impurity semiconductor layer is of p type while the second impurity semiconductor layer is of n type. 33. The method of manufacturing a photoelectric conversion device, according to claim 21, wherein the first impurity semiconductor layer is formed at the one surface side of the single crystal semiconductor substrate by adding an impurity element imparting one conductivity type to the single crystal semiconductor substrate.