초록

A photodetector containing a 2DEG layer is disclosed.

대표청구항 ▼

1. A photodetector comprising: an absorber layer formed on a substrate, the absorber layer having a first side and a second side opposite to the first side;a 2DEG layer containing at least one electrode formed on the substrate at the first side of the absorber layer;a tunneling junction layer formed

1. A photodetector comprising: an absorber layer formed on a substrate, the absorber layer having a first side and a second side opposite to the first side;a 2DEG layer containing at least one electrode formed on the substrate at the first side of the absorber layer;a tunneling junction layer formed on the substrate at the first or second side of the absorber layer; anda collector layer formed on the substrate at the second side of the absorber layer. 2. The photodetector of claim 1, wherein the tunneling junction layer is formed between the 2DEG layer and the absorber layer. 3. The photodetector of claim 1, wherein the absorber layer is formed between the 2DEG layer and the tunneling junction layer. 4. The photodetector of claim 1, further comprising a gate layer containing at least one electrode formed between the substrate and the 2DEG layer. 5. The photodetector of claim 4, wherein the photodetector is a phototransistor. 6. The photodetector of claim 1, wherein the absorber layer is configured to generate photo-excited carriers upon illumination without means to trap the photo-excited carriers therein. 7. A method for forming a photodetector, the method comprising: forming an absorber layer on a substrate, the absorber layer having a first side and a second side opposite to the first side;forming a 2DEG layer containing at least one electrode on the substrate at the first side of the absorber layer;forming a tunneling junction layer on the substrate at the first or second side of the 2DEG layer;forming a collector layer at the second side of the absorber layer on the substrate. 8. The method of claim 7, wherein forming the tunneling junction comprises forming the tunneling junction between the 2DEG layer and the absorber layer. 9. The method of claim 7, wherein forming the absorber layer comprises forming the absorber layer between the tunneling junction layer and the 2DEG layer. 10. A photodetector, comprising: an absorber layer operative to generate carriers when being photo-excited;a 2DEG layer adjacent to the absorber layer, the 2DEG layer comprising at least one electrode formed thereon;a collector layer formed of a heavily doped semiconductor adjacent to the absorber layer; anda tunneling junction layer near which the photo-excited carriers accumulate to shift a tunneling peak voltage of the photodetector. 11. The photodetector of claim 10, wherein the absorber layer is formed between the 2DEG layer and the collector layer. 12. The photodetector of claim 10, wherein the absorber layer, the 2DEG layer, the collector layer and the tunneling junction layer are so arranged that a negative photocurrent is detected when a negative biased is applied thereto, and a positive photocurrent is detected when a positive biased is applied.