IPC분류정보
국가/구분 |
United States(US) Patent
등록
|
국제특허분류(IPC7판) |
|
출원번호 |
US-0277866
(2008-11-25)
|
등록번호 |
US-8145172
(2012-03-27)
|
발명자
/ 주소 |
- Khoini-Poorfard, Ramin
- Piovaccari, Alessandro
- Rafi, Aslamali A.
- Koroglu, Mustafa H.
- Trager, David S.
|
출원인 / 주소 |
- Silicon Laboratories Inc.
|
대리인 / 주소 |
Polansky & Associates, P.L.L.C.
|
인용정보 |
피인용 횟수 :
7 인용 특허 :
22 |
초록
▼
A receiver (400) includes a tracking bandpass filter (420) and a signal processing circuit (430-480). The tracking bandpass filter (420) has a first input for receiving a radio frequency (RF) signal, and an output, and includes a first portion (731) on a semiconductor die (730), and at least one ind
A receiver (400) includes a tracking bandpass filter (420) and a signal processing circuit (430-480). The tracking bandpass filter (420) has a first input for receiving a radio frequency (RF) signal, and an output, and includes a first portion (731) on a semiconductor die (730), and at least one inductor (721). The at least one inductor (721) is operatively coupled to the first portion of the tracking bandpass filter (420). The signal processing circuit (430-480) has an input coupled to the output of the tracking bandpass filter (420), and an output for providing a processed signal. The semiconductor die (730) and the at least one inductor (721) are integrated into a single multi-chip module (MCM) (710).
대표청구항
▼
1. A receiver, comprising: a tracking bandpass filter having a first input for receiving a radio frequency (RF) input signal, and an output, wherein said tracking handpass filter comprises:a first portion disposed on a semiconductor die; andat least one inductor disposed on an integrated passive dev
1. A receiver, comprising: a tracking bandpass filter having a first input for receiving a radio frequency (RF) input signal, and an output, wherein said tracking handpass filter comprises:a first portion disposed on a semiconductor die; andat least one inductor disposed on an integrated passive device (IPD) die, said at least one inductor operatively coupled to said first portion of said tracking bandpass filter, anda signal processing circuit intergrated on said semiconductor die and having an input coupled to said output of said tracking bandpass filter, and an output for providing a processed signal,said semiconductor die and said IPD die integrated into a single multi-chip module (MCM). 2. The receiver of claim 1, wherein said tracking bandpass filter is characterized as being an L-C type bandpass filter. 3. The receiver of claim 2, wherein said first portion comprises a switched capacitor array. 4. The receiver of claim 3, wherein: said tracking bandpass filter further has a second input for receiving a center frequency adjustment signal; andthe receiver further comprises a microcontroller having an output operably coupled to said second input of said tracking bandpass filter for adjusting a center frequency of said tracking bandpass filter. 5. The receiver of claim 4, wherein: said microcontroller further has an input; andthe receiver further comprising a power detector having an input coupled to said output of said tracking bandpass filter, and an output coupled to said input of said microcontroller. 6. The receiver of claim 5, wherein said microcontroller is adapted to adjust said center frequency of said tracking bandpass filter based upon the power level at said output of said tracking bandpass filter, as measured by said power detector. 7. The receiver of claim 6, wherein said microcontroller is adapted to adjust said center frequency of said tracking bandpass filter by controlling said switched capacitor array. 8. The receiver of claim 1, wherein said tracking bandpass filter is characterized as being second order. 9. A receiver comprising: a tracking bandpass filter having a first input for receiving a radio frequency (RF) input signal, a second input for receiving a center frequency adjustment signal, and an output, wherein said tracking bandpass filter comprises:a first portion disposed on a semiconductor die; andat least one inductor disposed on an integrated passive device (IPD) die, said at least one inductor operatively coupled to said first portion of said tracking bandpass filter;a power detector having an input coupled to said output of said tracking bandpass filter, and an output;a signal processing circuit having an input coupled to said output of said tracking bandpass filter, and an output for providing a processed signal; anda microcontroller having an input coupled to said output of said power detector, and an output coupled to said second input of said tracking bandpass filter for adjusting a center frequency of said tracking bandpass filter; andwherein said semiconductor die and said (PD die integrated into a single multi-chip module (MCM). 10. The receiver of claim 9, wherein said tracking bandpass filter is characterized as being an L-C type bandpass filter. 11. The receiver of claim 10, wherein said first portion comprises a switched capacitor array. 12. The receiver of claim 11, wherein said microcontroller is adapted to adjust said center frequency of said tracking bandpass filter based upon the power level at said output of said tracking bandpass filter, as measured by said power detector. 13. The receiver of claim 12, wherein said microcontroller is adapted to adjust said center frequency of said tracking bandpass filter by controlling said switched capacitor array. 14. The receiver of claim 9, wherein said tracking bandpass filter is characterized as being second order. 15. A receiver, comprising: a low noise amplifier having a first input for receiving a radio frequency (RF) input signal, a second input for receiving a gain adjustment signal, and an output;a tracking bandpass filter having a first input coupled to said output of said low noise amplifier, a second input for receiving a center frequency adjustment signal, and an output, wherein said tracking bandpass filter comprises: a first portion disposed on a semiconductor die; andat least one inductor disposed on an integrated passive device (IPD) die, said at least one inductor operatively coupled to said first portion of said tracking bandpass;a local oscillator having an input for receiving a local oscillator frequency adjustment signal, and a first output for providing a first local oscillator signal at a frequency chosen to mix said output of said tracking bandpass filter to a desired intermediate frequency (IF);a mixer having a first input coupled to said output of said tracking bandpass filter, a second input coupled to said first output of said local oscillator, and a first output for providing a first IF signal at said desired intermediate frequency;a signal processing circuit having a first input coupled to said first output of said mixer, and an output for providing a processed signal; anda microcontroller having: a first output coupled to said second input of said low noise amplifier for adjusting said gain of said low noise amplifier;a second output coupled to said second input of said tracking bandpass filter for adjusting said center frequency of said tracking bandpass filter; anda third output coupled to said input of said local oscillator for adjusting said first local oscillator frequency of said local oscillator; and wherein said semiconductor die and said IPD die are integrated into a single package. 16. The receiver of claim 15, wherein said semiconductor die further comprises said low noise amplifier, said first portion of said tracking bandpass filter, said local oscillator, said mixer, said signal processing circuit, and said microcontroller. 17. The receiver of claim 16, wherein said first local oscillator signal is characterized as being a square wave signal. 18. The receiver of claim 16, further comprising: a lowpass filter having a first input coupled to said output of said tracking bandpass filter, a second input for receiving a corner frequency adjustment signal, and an output coupled to said input of said mixer; andsaid microcontroller further having a fourth output coupled to said second input of said lowpass filter for adjusting a corner frequency of said lowpass filter. 19. The receiver of claim 18, wherein said semiconductor die further comprises said lowpass filter. 20. The receiver of claim 16, wherein: said local oscillator further has a second output for providing a second local oscillator signal in quadrature with said first local oscillator signal;said mixer having a third input coupled to said second output of said local oscillator, and a second output for providing a second IF signal at said desired intermediate frequency; andsaid signal processing circuit having a second input coupled to said second output of said mixer.
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