초록

Provided are methods for conditioning a getter material, comprising subjecting the getter material to microwave radiation. Electronic devices uses the conditioned getter materials and methods of making such electronic devices are also provided.

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1. A method for conditioning a getter material comprising heating the getter material with microwave radiation wherein the getter material is exposed to a temperature of 300° C. or less and exposed to the microwave radiation for three minutes or fewer. 2. The method of claim 1 wherein the getter mat

1. A method for conditioning a getter material comprising heating the getter material with microwave radiation wherein the getter material is exposed to a temperature of 300° C. or less and exposed to the microwave radiation for three minutes or fewer. 2. The method of claim 1 wherein the getter material comprises a molecular sieve. 3. The method of claim 2 wherein the molecular sieve comprises zeolite. 4. A method of making an electronic device comprising conditioning a getter material by heating the getter material using microwave radiation wherein the getter material is exposed to a temperature of 300° C. or less and exposed to the microwave radiation for three minutes or fewer; and encapsulating the getter material within the electronic device. 5. The method of claim 4 further comprising cooling the getter material prior to encapsulating the getter material. 6. The method of claim 4 wherein the getter material comprises a molecular sieve. 7. The method of claim 6 wherein the molecular sieve comprises a zeolite. 8. The method of claim 4 further comprising layering the getter material directly on a substrate. 9. The method of claim 8 wherein a thickness of the getter material is less than or equal to 100 μm. 10. The method of claim 9 wherein the thickness is less than or equal to 1 μm. 11. The method of claim 4 wherein the electronic device comprises a substrate, an anode layer, a cathode layer, and an active layer. 12. A method of assembling an electronic device comprising providing a substrate comprising a layer of getter material; providing an anode layer, a cathode layer, and an active layer; and conditioning the getter material by exposing the substrate and the getter material to microwave radiation wherein the getter material is exposed to a temperature of 300° C. or less and wherein the substrate and the getter material are exposed to the microwave radiation for three minutes or fewer. 13. The method of claim 12 further comprising layering the getter material directly on a substrate. 14. The method of claim 12 wherein a thickness of the getter material is less than or equal to 100 μm. 15. The method of claim 14 wherein the thickness is less than or equal to 1 μm.