[특허]Topography reduction and control by selective accelerator removal

Novellus Systems, Inc.

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내보내기 페이스북 공유 트위터 공유 카카오톡 공유

Topography reduction and control by selective accelerator removal

특허상세정보
국가/구분	United States(US) Patent 등록
국제특허분류(IPC7판)	H01L-021/302
미국특허분류(USC)	438/754; 438/692; 438/745; 438/759; 216/105
출원번호	US-0602128 (2006-11-20)
등록번호	US-8158532 (2012-04-17)
발명자 / 주소	Mayer, Steven T. Rea, Mark L. Hill, Richard S. Kepten, Avishai Stowell, R. Marshall Webb, Eric G.
출원인 / 주소	Novellus Systems, Inc.
대리인 / 주소	Weaver Austin Villeneuve & Sampson LLP
인용정보	피인용 횟수 : 25 인용 특허 : 70

초록
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Plating accelerator is applied selectively to a substantially-unfilled wide (e.g., low-aspect-ratio feature cavity. Then, plating of metal is conducted to fill the wide feature cavity and to form an embossed structure in which the height of a wide-feature metal protrusion over the metal-filled wide-feature cavity is higher than the height of metal over field regions. Most of the overburden metal is removed using non-contact techniques, such as chemical wet etching. Metal above the wide feature cavity protects the metal-filled wide-feature interconnect against dishing, and improved planarization techniques avoid erosion of the metal interconnect and dielectric insulating layer. In some embodiments, plating of metal onto a substrate is conducted to fill narrow (e.g., high-aspect-ratio feature cavities) in the dielectric layer before selective application of plating accelerator and filling of the wide feature cavity.

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1. A method of forming a metal structure, comprising steps of: (a) providing a substrate having a base layer and a substrate surface, said base layer including a wide feature cavity and a field, said wide feature cavity defining a wide-feature region, said field being adjacent to said wide feature cavity and defining a field region;(b) exposing said substrate to a deposition accelerator so that both the field region and the wide-feature region are exposed to the deposition accelerator, without simultaneously depositing metal;(c) ceasing exposing said substrate to a deposition accelerator;(d) selectively removing at least a portion of said deposition accelerator from said field region using a spacially selective electrochemical reaction;(e) then after all of steps (b), (c) and (d), exposing said substrate to a metal deposition solution;(f) then conducting a wide-feature metal deposition, wherein said deposition accelerator increases a rate of metal deposition in said wide-feature region relative to a rate of metal deposition in said field region. 2. A method as in claim 1, characterized by: not removing metal from said substrate during said wide-feature metal deposition of step (f). 3. A method as in claim 1, wherein: said accelerator comprises accelerator species selected from the group consisting of 2-mercaptoethane sulfonic acid (MESA), 3-mercapto-1-propane sulfonic acid (MPSA), 3-mercaptopropionic acid, mercaptopyruvate, 3-mercapto-2-butanol, 2,3 dimercaptopropane sulphonic acid, 1-thioglycerol, salts thereof, and derivatives thereof. 4. A method as in claim 1 wherein said step (b) of exposing said substrate to the deposition accelerator comprises: contacting said substrate with a phase containing an accelerator species, said phase selected from the group consisting of a liquid, a solution, and a vapor. 5. A method as in claim 1 wherein: substantially no metal deposition occurs during said steps (b) and (d). 6. A method as in claim 1 further characterized in that: substantially no accelerator becomes attached to said substrate during said wide-feature metal deposition of step (f). 7. A method as in claim 1 wherein: said step (d) of causing an accelerator to become attached selectively to said substrate is conducted in a processing chamber in which metal deposition is not conducted. 8. A method as in claim 1, wherein: said step (f) of conducting said wide-feature metal deposition includes cathodizing said substrate surface; andsaid selectively removing at least a portion of said deposition accelerator is not conducted during cathodizing said substrate surface. 9. A method of claim 1 wherein said wide-feature metal deposition step (f) comprises: not simultaneously contacting said substrate with a rubbing pad. 10. A method of claim 1 wherein said wide-feature metal deposition step (f) comprises: simultaneously contacting said substrate with a rubbing pad. 11. A method as in claim 1 wherein: said base layer has a base field height; and further comprising: continuing said wide-feature metal deposition so that deposited metal in said wide-feature region comprises a wide-feature protrusion;removing metal substantially completely from said field region; andremoving deposited metal from said wide-feature region until a metal level in said wide-feature region is lower than said base field height. 12. A method as in claim 1 wherein said substrate comprises a barrier layer on said base layer and a metal seed layer on said barrier layer, and further comprising: continuing said wide-feature metal deposition so that said wide-feature region contains a wide-feature metal protrusion;then isotropically removing deposited metal and said metal seed layer from said field region;then removing said barrier film from said field region of said base layer. 13. The method as in claim 1, wherein said selectively removing at least a portion of said deposition accelerator comprises selective electrochemical accelerator removal. 14. The method as in claim 1, wherein said selectively removing at least a portion of said deposition accelerator comprises selective membrane-mediated accelerator removal. 15. A method as in claim 1 wherein said step (b) of exposing said substrate to a deposition accelerator comprises: contacting said substrate with an accelerator solution containing accelerator species. 16. A method as in claim 15, wherein: said precursor solution comprises an accelerator concentration substantially greater than an accelerator concentration in said deposition solution. 17. A method as in claim 1 wherein applying an accelerator film on said substrate comprises: contacting said substrate with a precursor solution containing accelerator precursor molecules; andtransforming said accelerator precursor molecules to accelerator species. 18. A method as in claim 17, wherein: said precursor solution comprises accelerator precursor species selected from the group consisting of dimercaptopropane sulfonic acid (DMPSA), dimercaptoethane sulfonic acid (DMESA), salts thereof, and derivatives thereof. 19. A method as in claim 17, wherein said transforming said accelerator precursor molecules to accelerator species comprises: applying sufficient electric current to said substrate to transform said accelerator precursor molecules to accelerator species. 20. A method as in claim 1, further comprising: continuing said wide-feature metal deposition so that deposited metal in said wide-feature region comprises a wide-feature protrusion;then isotropically removing deposited metal from said substrateuntil metal is substantially completely removed from said field region, and a wide-feature protrusion of metal remains in said wide-feature region. 21. A method as in claim 20, further comprising: performing chemical mechanical polishing (CMP) of said substrate surface to planarize said substrate surface. 22. A method as in claim 1, wherein said selectively removing at least a portion of said deposition accelerator comprises: contacting said substrate with a pad that selectively removes said accelerator film from at least said field region. 23. A method as in claim 22, wherein contacting said substrate with said pad is performed for a period of time and then stopped prior to conducting said wide-feature metal deposition. 24. A method as in claim 22, characterized in that said contacting said substrate with a pad further comprises contacting said substrate and said pad with a lubricant that is different from said metal deposition solution. 25. A method as in claim 1, wherein said selectively removing at least a portion of said deposition accelerator comprises: using a contact-less technique. 26. A method as in claim 25, wherein said selectively removing at least a portion of said deposition accelerator comprises: selective electrochemical accelerator removal. 27. A method as in claim 25, wherein said selectively removing at least a portion of said deposition accelerator comprises: conducting selective membrane-mediated accelerator removal. 28. A method as in claim 25, wherein said selectively removing at least a portion of said deposition accelerator comprises: electropolishing. 29. A method as in claim 1, wherein: said wide feature cavity has a width at least three times greater than its depth, so that said wide feature cavity has an aspect ratio not exceeding about 0.33. 30. A method as in claim 29, further comprising: continuing depositing metal on said substrate until deposited metal in said wide-feature region comprises a wide-feature protrusion having a wide-feature protrusion height above said base layer that is greater than a thickness of deposited field metal in said field region, thereby forming an embossed structure. 31. A method as in claim 30, wherein: said deposited field metal in said field region has a thickness less than one-half of the width of said wide feature cavity. 32. A method as in claim 30, wherein: said deposited field metal in said field region has a thickness less than ⅕ of the width of said wide feature cavity. 33. A method as in claim 30, further comprising: after said forming an embossed structure, removing deposited metal from said field region. 34. A method as in claim 33 wherein said removing deposited metal from said substrate comprises removing deposited metal from said substrate at a uniform removal rate. 35. A method as in claim 34 wherein said removing deposited metal from said substrate at a uniform removal rate comprises: removing deposited metal from said wide-feature protrusion at a metal removal rate and removing deposited metal from said field region substantially at said metal removal rate. 36. A method as in claim 35 wherein said removing deposited metal from said wide-feature region and from said field region selectively removes deposited metal at a removal rate greater than removing other substrate material from said substrate. 37. A method as in claim 35 wherein said removing deposited metal from said substrate comprises: isotropically removing deposited metal from said substrate until deposited metal in said field region is substantially completely removed and a wide-feature protrusion of deposited metal remains in said wide-feature region. 38. A method as in claim 37 wherein said isotropically removing deposited metal from said substrate comprises: isotropically removing deposited metal from said substrate until a thin conductive metal seed layer in said field region is substantially completely removed and a wide-feature protrusion of deposited metal is located in said wide-feature region. 39. A method as in claim 33 wherein: said removing deposited metal comprises isotropic wet etching said substrate. 40. A method of forming a metal structure, comprising: (a) providing a substrate having a base layer and a substrate surface, said base layer including a wide feature cavity and a field, said wide feature cavity defining a wide-feature region, said field being adjacent to said wide feature cavity and defining a field region;(b) exposing at least said wide-feature region of said substrate to a deposition accelerator, without simultaneously depositing metal;(c) ceasing exposing said substrate to the deposition accelerator;(d) causing said deposition accelerator to become attached selectively to said substrate in said wide-feature region relative to said field region, without simultaneously depositing metal in said wide-feature region;(e) then after all of steps (b), (c) and (d), exposing said substrate to a metal deposition solution;(f) then conducting a wide-feature metal deposition, wherein said accelerator increases a rate of metal deposition in said wide-feature region relative to a rate of metal deposition in said field region;(g) continuing said wide-feature metal deposition so that deposited metal in said wide-feature region comprises a wide-feature protrusion;(h) isotropically removing deposited metal from said substrate until metal is substantially completely removed from said field region, and a wide-feature protrusion of metal remains in said wide-feature region;(i) performing chemical mechanical polishing (CMP) of said substrate surface to planarize said substrate surface; and, wherein said base layer has a base field height of metal; and(j) after said CMP, isotropically removing deposited metal from said substrate until deposited metal in said wide-feature region is lower than said base field height, thereby forming a recess in said wide feature cavity. 41. A method as in claim 40, further comprising: forming a metal capping layer in said wide-feature region to cover deposited metal in said wide feature cavity. 42. A method as in claim 41, further comprising: after forming said metal capping layer, performing chemical mechanical polishing (CMP) of said substrate surface to remove a small amount of capping layer metal from said capping layer. 43. A method of forming a metal structure, comprising: (a) providing a substrate having a base layer and a substrate surface, said base layer including a wide feature cavity and a field, said wide feature cavity defining a wide-feature region, said field being adjacent to said wide feature cavity and defining a field region;(b) exposing at least said wide-feature region of said substrate to a deposition accelerator, without simultaneously depositing metal;(c) ceasing exposing said substrate to the deposition accelerator;(d) causing said deposition accelerator to become attached selectively to said substrate in said wide-feature region relative to said field region, without simultaneously depositing metal in said wide-feature region;(e) then after all of steps (b), (c) and (d), exposing said substrate to a metal deposition solution;(f) then conducting a wide-feature metal deposition, wherein said accelerator increases a rate of metal deposition in said wide-feature region relative to a rate of metal deposition in said field region; wherein:said base layer further includes a narrow feature cavity defining a narrow-feature region, said narrow feature cavity having a higher aspect ratio than said wide feature cavity; and further comprising: before said step (b), exposing said substrate to a narrow-feature deposition solution;then before said step (b), conducting a narrow-feature metal deposition using said narrow-feature deposition solution to deposit metal on said substrate in at least said narrow feature cavity; andthen before said step (b), ceasing exposure of said substrate to said narrow-feature deposition solution. 44. A method as in claim 43 wherein said removing deposited metal from said substrate comprises: removing deposited metal from said substrate until deposited metal in said field region is substantially completely removed and a protrusion of deposited metal remains in each of said narrow-feature region and said wide-feature region. 45. A method as in claim 43 further characterized in that: substantially no accelerator becomes attached to said substrate during said narrow-feature metal deposition. 46. A method as in claim 43, wherein: said step of conducting said narrow-feature metal deposition and said step (f) of conducting said wide-feature metal deposition include cathodizing said substrate surface; andsaid selectively removing at least a portion of said accelerator film is not conducted during cathodizing said substrate surface. 47. A method as in claim 43, wherein: said base layer has a base field height; and further comprising: continuing said wide-feature metal deposition so that deposited metal in said narrow-feature region comprises a narrow-feature protrusion and deposited metal in said wide-feature region comprises a wide-feature protrusion;removing metal substantially completely from said field region; andremoving deposited metal from said narrow-feature region and from said wide-feature region until a metal level in said narrow-feature region and a metal level in said wide-feature region are lower than said base field height. 48. A method as in claim 43 wherein said substrate comprises a barrier layer on said base layer and a metal seed layer on said barrier layer, and further comprising: continuing said wide-feature metal deposition so that said narrow-feature region contains a narrow-feature metal protrusion and said wide-feature region contains a wide-feature metal protrusion;then isotropically removing deposited metal and said metal seed layer from said field region;then removing said barrier film from said field region of said base layer. 49. A method as in claim 43, further comprising: conducting edge accelerator removal (EAR) processes after said exposing at least said wide-feature region of said substrate to the deposition accelerator in step (b). 50. A method as in claim 43, further comprising: applying an initial accelerator to said substrate at least in said narrow-feature region before said step of exposing said substrate to a narrow-feature deposition solution. 51. A method as in claim 50, further comprising: deactivating said initial accelerator before said step (d) of causing an accelerator to become attached selectively in said wide feature cavity. 52. A method as in claim 43, further comprising: removing deposited metal from said substrate after said step (f). 53. A method as in claim 52 wherein: said removing deposited metal initially is substantially uniform. 54. A method as in claim 52 wherein: said removing deposited metal comprises isotropic wet etching said substrate. 55. A method as in claim 43, further comprising: conducting a surface and edge treatment (SET) operation after ceasing exposure to narrow-feature deposition solution and before said exposing at least said wide-feature region of said substrate to the deposition accelerator in step (b). 56. A method as in claim 55 wherein said SET operation comprises: deactivating accelerator that is present in said narrow-feature region to avoid excessive overplating in said narrow-feature region during said wide-feature deposition in step (f). 57. A method as in claim 55 wherein said SET operation comprises: cleaning said substrate surface. 58. A method as in claim 57 wherein said wherein said cleaning comprises: removing a thin layer of metal from metal deposited during said narrow-feature metal deposition; and wherein removing a thin layer of metal comprises: removing a thin layer having a thickness in a range of about from 1 nm to 10 nm; and wherein said removing a thin layer of metal comprises:conducting a chemical wet etch. 59. A method as in claim 43, further comprising: continuing said narrow-feature metal deposition until deposited metal in said narrow feature cavity has an adjusted aspect ratio less than 1. 60. A method as in claim 59, further comprising: continuing said narrow-feature metal deposition until deposited metal in said narrow-feature region comprises a narrow-feature protrusion. 61. A method as in claim 60, further comprising: continuing said wide-feature metal deposition of step (f) until deposited metal in said wide-feature region comprises a wide-feature protrusion. 62. A method as in claim 61, further comprising: continuing said wide-feature metal deposition until a narrow-feature protrusion height of said narrow-feature protrusion and a wide-feature protrusion height of said wide-feature protrusion are substantially equal. 63. A method as in claim 59, further comprising: continuing said wide-feature metal deposition so that deposited metal in said narrow-feature region comprises a narrow-feature protrusion. 64. A method as in claim 63, further comprising: continuing said wide-feature metal deposition until deposited metal in said wide-feature region comprises a wide-feature protrusion. 65. A method as in claim 64, further comprising: continuing said wide-feature metal deposition until a narrow-feature protrusion height of said narrow-feature protrusion and a wide-feature protrusion height of said wide-feature protrusion are substantially equal. 66. A method as in claim 43, further comprising: continuing said wide-feature metal deposition so that deposited metal in said narrow-feature region comprises a narrow-feature protrusion and deposited metal in said wide-feature region comprises a wide-feature protrusion;then isotropically removing deposited metal from said substrateuntil metal is substantially completely removed from said field region, and a narrow-feature protrusion of metal remains in said narrow-feature region and a wide-feature protrusion of metal remains in said wide-feature region. 67. A method as in claim 66, further comprising: performing chemical mechanical polishing (CMP) of said substrate surface to planarize said substrate surface. 68. A method as in claim 67, wherein: said base layer has a base field height; and further comprising:after said CMP, isotropically removing deposited metal from said substrate until deposited metal in said narrow-feature region and in said wide-feature region is lower than said base field height, thereby forming a recess in said narrow feature cavity and a recess in said wide feature cavity. 69. A method as in claim 68, further comprising: forming a metal capping layer in said recess in said narrow-feature cavity to cover deposited metal in said narrow feature cavity and a metal capping layer in said recess in said wide-feature cavity to cover deposited metal in said wide feature cavity. 70. A method as in claim 69, further comprising: after forming metal capping layers, performing chemical mechanical polishing (CMP) of said substrate surface to remove a small amount of capping layer metal from said capping layers.

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