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특허 상세정보

Topography reduction and control by selective accelerator removal

특허상세정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판) H01L-021/302   
미국특허분류(USC) 438/754; 438/692; 438/745; 438/759; 216/105
출원번호 US-0602128 (2006-11-20)
등록번호 US-8158532 (2012-04-17)
발명자 / 주소
출원인 / 주소
대리인 / 주소
    Weaver Austin Villeneuve & Sampson LLP
인용정보 피인용 횟수 : 25  인용 특허 : 70
초록

Plating accelerator is applied selectively to a substantially-unfilled wide (e.g., low-aspect-ratio feature cavity. Then, plating of metal is conducted to fill the wide feature cavity and to form an embossed structure in which the height of a wide-feature metal protrusion over the metal-filled wide-feature cavity is higher than the height of metal over field regions. Most of the overburden metal is removed using non-contact techniques, such as chemical wet etching. Metal above the wide feature cavity protects the metal-filled wide-feature interconnect ag...

대표
청구항

1. A method of forming a metal structure, comprising steps of: (a) providing a substrate having a base layer and a substrate surface, said base layer including a wide feature cavity and a field, said wide feature cavity defining a wide-feature region, said field being adjacent to said wide feature cavity and defining a field region;(b) exposing said substrate to a deposition accelerator so that both the field region and the wide-feature region are exposed to the deposition accelerator, without simultaneously depositing metal;(c) ceasing exposing said sub...

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이 특허를 인용한 특허 피인용횟수: 25

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  8. Reid, Jonathan; Varadarajan, Sesha; Emekli, Ugur. Methods and apparatus for depositing copper on tungsten. USP2013028377824.
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