Epitaxial layers on oxidation-sensitive substrates and method of producing same
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
B32B-009/00
C30B-029/16
C23C-016/00
출원번호
US-0759327
(2010-04-13)
등록번호
US-8163403
(2012-04-24)
발명자
/ 주소
Zurbuchen, Mark A.
출원인 / 주소
Zurbuchen, Mark A.
대리인 / 주소
Ryndak & Suri LLP
인용정보
피인용 횟수 :
6인용 특허 :
8
초록▼
This invention disclosure describes methods for the fabrication of metal oxide films on surfaces by topotactic anion exchange, and laminate structures enabled by the method. A precursor metal-nonmetal film is deposited on the surface, and is subsequently oxidized via topotactic anion exchange to yie
This invention disclosure describes methods for the fabrication of metal oxide films on surfaces by topotactic anion exchange, and laminate structures enabled by the method. A precursor metal-nonmetal film is deposited on the surface, and is subsequently oxidized via topotactic anion exchange to yield a topotactic metal-oxide product film. The structures include a metal-oxide layer(s) and/or a metal-nonmetal layer(s).
대표청구항▼
1. A functional laminate structure comprising: an oxidizable substrate having a surface wherein the surface is not oxidized; anda crystalline layer comprising an oxide selected from the group consisting of A(O,X)y, doped substituents thereof, anion-deficient versions thereof, and anion-excess versio
1. A functional laminate structure comprising: an oxidizable substrate having a surface wherein the surface is not oxidized; anda crystalline layer comprising an oxide selected from the group consisting of A(O,X)y, doped substituents thereof, anion-deficient versions thereof, and anion-excess versions thereof, wherein A is a metal, O is oxygen, X is a nonmetal constituent comprising a nonmetal selected from the group consisting of H, C, F, S, Cl, Se, Br, Te and combinations thereof, y represents the stochiometry of O and X relative to A, and the crystalline layer is on the surface. 2. The structure of claim 1 wherein the surface is substantially single crystalline. 3. The structure of claim 2 wherein A comprises a an element selected from the group consisting of Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and combinations thereof. 4. The structure of claim 3 wherein the crystalline layer is epitaxial with the surface. 5. The structure of claim 4 wherein the surface is silicon. 6. The structure of claim 3 wherein A comprises Gd and X comprises F. 7. The structure of claim 1 wherein X comprises fluorine. 8. The structure of claim 1 wherein X further comprises nitrogen. 9. The structure of claim 1 wherein X comprises fluorine and nitrogen. 10. The structure of claim 1 wherein X comprises sulfur. 11. The structure of claim 1 wherein X comprises two nonmetals selected from the group consisting of N, F, S and combinations thereof. 12. The structure of claim 1 wherein X comprises a nonmetal selected from the group consisting of F, S, and combinations thereof. 13. The structure of claim 1 wherein the crystalline layer has the structure of fluorite, bixbyite, pyrochlore, perovskite, layered perovskite, or scheelite type crystals 14. The structure of claim 1 further comprising a metal-oxide layer present on the crystalline layer. 15. The structure of claim 1 wherein the oxygen content in the crystalline layer is less than 80%. 16. The structure of claim 1 wherein the oxygen content in the crystalline layer is less than 50%. 17. The structure of claim 1 wherein the oxygen content in the crystalline layer is less than 20%. 18. The structure of claim 1 wherein y is selected from the group of 0.33, 1, 1.5 and 2. 19. The structure of claim 1 wherein the substrate is biaxially textured. 20. The structure of claim 19 wherein A comprises a lanthanide element selected from the group consisting of Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and combinations thereof. 21. The structure of claim 19 wherein the substrate is nickel. 22. The structure of claim 1 further comprising a functional layer deposited on the crystalline layer. 23. The structure of claim 1 wherein the constituents of X have an average anionic charge that approximates that of oxygen. 24. A method of fabricating an epitaxial layer on an oxidation-sensitive substrate comprising: providing an oxidizable substrate having a surface;heating the substrate; anddepositing a crystalline film on the surface via vapor deposition comprising delivering to the substrate a gas bearing a metal (A), oxygen (O) and a nonmetal (X), the oxygen content of the gas being such that the substrate does not oxidize at the temperature of deposition; wherein the deposited crystalline film comprises an oxide selected from the group consisting of A(O,X)y, doped substituents thereof, anion-deficient versions thereof, and anion-excess versions thereof, wherein y represents the stochiometry of O and X relative to A and X comprises a nonmetal selected from the group consisting of H, C, F, S, Cl, Se, Br, Te and combinations thereof. 25. The method of claim 24 wherein the delivering to the substrate comprises delivering to the substrate the gas bearing the metal, the metal selected from the group of lanthanide elements consisting of Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and combinations thereof. 26. The method of claim 25 wherein the providing an oxidizable substrate comprises providing the substrate such that the corresponding lanthanide oxide cannot be directly deposited on the surface without oxidizing the substrate. 27. The method of claim 24 wherein the delivering to the substrate comprises delivering to the substrate the gas bearing the nonmetal X, the nonmetal X selected from the group consisting of F, S, and combinations thereof. 28. The method of claim 24 wherein the delivering to the substrate comprises delivering to the substrate the gas, the gas bearing the nonmetal X, the nonmetal X selected from the group consisting of N, F, S, and combinations thereof. 29. The method of claim 24 wherein delivering to the substrate comprises delivering to the substrate the gas, the gas having a partial pressure of oxygen such that the substrate does not oxidize. 30. The method of claim 24 wherein delivering to the substrate comprises delivering to the substrate the gas, the gas bearing hydrogen and water such that the ratio of hydrogen to water in the gas is such that the substrate does not oxidize. 31. The method of claim 24 wherein the depositing a crystalline film comprises depositing the crystalline film epitaxial to the surface. 32. The method of claim 24 further comprising exchanging the majority of the nonmetal X for oxygen. 33. The method of claim 32 wherein the exchanging is topotactic. 34. The method of claim 24 further comprising depositing a functional layer on the crystalline film. 35. The method of claim 24 wherein the providing an oxidizable substrate comprises providing the oxidizable substrate, the oxidizable substrate being biaxially-textured. 36. The structure of claim 1 wherein A comprises an element selected from the group consisting of Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and combinations thereof. 37. A functional laminate structure comprising: an oxidizable substrate having a surface wherein the surface is not oxidized; anda crystalline layer comprising an oxide selected from the group consisting of A(O,X)y, doped substituents thereof, anion-deficient versions thereof, and anion-excess versions thereof, wherein A is a metal, O is oxygen, X is a nonmetal constituent, y represents the stochiometry of O and X relative to A, the crystalline layer is on the surface, and the constituents of X have an average anionic charge that approximates that of oxygen. 38. The structure of claim 37 wherein the surface is substantially single crystalline. 39. The structure of claim 38 wherein A comprises an element selected from the group consisting of Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu and combinations thereof. 40. The structure of claim 39 wherein the crystalline layer is epitaxial with the surface. 41. The structure of claim 40 wherein the surface is silicon. 42. The structure of claim 38 wherein X comprises a nonmetal selected from the group consisting of H, C, N, F, P, S, Cl, Se, Br, Te and combinations thereof. 43. A method of fabricating an epitaxial layer on an oxidation-sensitive substrate comprising: providing an oxidizable substrate having a surface;heating the substrate; and depositing a crystalline film on the surface via vapor deposition comprising delivering to the substrate a gas bearing a metal (A), oxygen (O) and a nonmetal (X), the oxygen content of the gas being such that the substrate does not oxidize at the temperature of deposition; wherein the deposited crystalline film comprises an oxide selected from the group consisting of A(O,X)y, doped substituents thereof, anion-deficient versions thereof, and anion-excess versions thereof, wherein y represents the stochiometry of O and X relative to A and the constituents of X have an average anionic charge that approximates that of oxygen. 44. The method of claim 43 further comprising exchanging the majority of the nonmetal X for oxygen. 45. The method of claim 44 wherein the exchanging is topotactic.
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