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Manufacturing method for light emitting device

IPC분류정보
국가/구분 United States(US) Patent 등록
국제특허분류(IPC7판)
  • H01L-021/84
출원번호 US-0108128 (2011-05-16)
등록번호 US-8168483 (2012-05-01)
우선권정보 JP-2002-276216 (2002-09-20)
발명자 / 주소
  • Yamazaki, Shunpei
  • Kuwabara, Hideaki
  • Murakami, Masakazu
출원인 / 주소
  • Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
    Husch Blackwell LLP
인용정보 피인용 횟수 : 4  인용 특허 : 83

초록

The present invention provides a vapor deposition method and a vapor deposition system of film formation systems by which EL materials can be used more efficiently and EL materials having superior uniformity with high throughput rate are formed. According to the present invention, inside a film form

대표청구항

1. A manufacturing method for a light emitting device comprising the steps of: forming a semiconductor film over a substrate having an insulating surface;irradiating the semiconductor film with a laser beam from a laser by relatively moving at least one of the substrate and the laser beam in a first

이 특허에 인용된 특허 (83)

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이 특허를 인용한 특허 (4)

  1. Yamazaki, Shunpei; Koyama, Jun, Lighting device.
  2. Yamazaki, Shunpei; Koyama, Jun, Lighting device having variable current source.
  3. Yamazaki, Shunpei, Manufacturing apparatus and manufacturing method of lighting device.
  4. Gregory, Haydn, Molecular electronic device fabrication methods and structures.
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