초록 ▼

Provided are resistive random access memories (RRAMs) and methods of manufacturing the same. A RRAM includes a storage node including a variable resistance layer, a switching device connected to the storage node, and a protective layer covering an exposed part of the variable resistance layer. The p

Provided are resistive random access memories (RRAMs) and methods of manufacturing the same. A RRAM includes a storage node including a variable resistance layer, a switching device connected to the storage node, and a protective layer covering an exposed part of the variable resistance layer. The protective layer includes at least one of aluminum oxide and titanium oxide. The variable resistance layer is a metal oxide layer.

대표청구항 ▼

1. A resistive random access memory comprising: a first electrode on a substrate;a stacked stricture including a variable resistance layer, an intermediate electrode and a switching device on the first electrode, the variable resistance layer, the intermediate electrode and the switching device bein

1. A resistive random access memory comprising: a first electrode on a substrate;a stacked stricture including a variable resistance layer, an intermediate electrode and a switching device on the first electrode, the variable resistance layer, the intermediate electrode and the switching device being sequentially stacked on the first electrode, or the switching device, the intermediate electrode and the variable resistance layer being sequentially stacked on the first electrode;a protective layer surrounding the stacked structure and having an opening to expose an upper surface portion of the stacked structure, wherein the protective layer is formed of a material that does not cause a silicide reaction with the variable resistance layer;an interlayer insulating layer on the protective layer, an upper surface portion of the stacked structure not covered by the interlayer insulating layer; anda second electrode contacting the upper surface portion of the stacked structure. 2. The resistive random access memory of claim 1, wherein the protective layer is a material layer for preventing the permeation of hydrogen. 3. The resistive random access memory of claim 1, wherein the protective layer includes at least one of aluminum oxide and titanium oxide. 4. The resistive random access memory of claim 1, wherein the variable resistance layer is a metal oxide layer. 5. The resistive random access memory of claim 1, wherein the switching device is a diode. 6. The resistive random access memory of claim 5, wherein the protective layer covers at least a part of the diode. 7. The resistive random access memory of claim 1, wherein the protective layer covers side surfaces of the variable resistance layer, the intermediate electrode, and the switching device. 8. The resistive random access memory of claim 1, wherein the first electrode and the second electrode have wiring shapes and cross each other. 9. The resistive random access memory of claim 8, wherein the resistive random access memory is a multi-layer crosspoint memory device having a 1 diode-1 resistance (1D-1R) cell structure. 10. A method of manufacturing a resistive random access memory having a storage node including a variable resistance layer and a protective layer covering an exposed part of the variable resistance layer, the method comprising: forming a first electrode on a substrate;forming a stacked structure including the variable resistance layer, an intermediate electrode and a switching device on the first electrode, wherein the variable resistance layer, the intermediate electrode and the switching device are sequentially stacked on the first electrode, or the switching device, the intermediate electrode and the variable resistance layer are sequentially stacked on the first electrode,forming the protective layer to cover the first electrode and the stacked structure,forming an interlayer insulating layer on the protective layer,etching the interlayer insulating layer to expose the protective layer on an upper surface of the stacked structure,exposing the stacked structure by etching the exposed protective layer, and forming a second electrode contacting the stacked structure. 11. The method of claim 10, wherein the protective layer is formed of a material that does not cause a silicide reaction with the variable resistance layer. 12. The method of claim 10, wherein the protective layer is a material layer for preventing the permeation of hydrogen. 13. The method of claim 10, wherein the protective layer includes at least one of aluminum oxide and titanium oxide. 14. The method of claim 10, wherein the variable resistance layer is formed of metal oxide.