Process stability of NBDE using substituted phenol stabilizers
원문보기
IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
C09K-015/08
C10L-001/183
C23C-016/40
H01L-021/00
출원번호
US-0470002
(2009-05-21)
등록번호
US-8173213
(2012-05-08)
발명자
/ 주소
Mayorga, Steven Gerard
Haas, Mary Kathryn
O'Neill, Mark Leonard
Sinatore, Dino
출원인 / 주소
Air Products and Chemicals, Inc.
대리인 / 주소
Rossi, Joseph D.
인용정보
피인용 횟수 :
0인용 특허 :
24
초록▼
A stabilized cyclic alkene composition comprising one or more cyclic alkenes, and at least one stabilizer compound having the Formula (I), R1,R2,R3,R4,R5(C6)OH Formula (I)wherein R′ through R5 can each independently be H, OH, C1-C8 linear, branched, or cyclic alkyl, C1-C8 linear, branched, or cycli
A stabilized cyclic alkene composition comprising one or more cyclic alkenes, and at least one stabilizer compound having the Formula (I), R1,R2,R3,R4,R5(C6)OH Formula (I)wherein R′ through R5 can each independently be H, OH, C1-C8 linear, branched, or cyclic alkyl, C1-C8 linear, branched, or cyclic alkoxy or substituted or unsubstituted aryl, and wherein the stabilizer compound is present in an amount greater than 200 ppm up to 20,000 ppm and has a boiling point lower than 265° C. A method for forming a layer of carbon-doped silicon oxide on a substrate, which uses the stabilized alkene composition and a silicon containing compound.
대표청구항▼
1. A method of forming a layer of carbon-doped silicon oxide on a substrate, the method comprising the steps of: providing a cyclic alkene composition in a first container, wherein the cyclic alkene is at least one compound selected from the group consisting of: dipentene, phellandrene, dicyclopenta
1. A method of forming a layer of carbon-doped silicon oxide on a substrate, the method comprising the steps of: providing a cyclic alkene composition in a first container, wherein the cyclic alkene is at least one compound selected from the group consisting of: dipentene, phellandrene, dicyclopentadiene, alpha-terpinene, gamma-terpinene, limonene, alphapinene, 3-carene, terpinolene, norbornene, norbomadiene, 5-vinyl-2-norbornene, and 5-ethylidene-2-norbornene, a silicon containing compound in a second container, a film deposition tool, a film deposition chamber within said film deposition tool, and a stream of carrier gas to sweep said cyclic alkene composition and said silicon containing compound through a connection into the film deposition chamber, wherein said substrate is disposed within said film deposition chamber of said film deposition tool;connecting said first and second containers to said film deposition chamber within said film deposition tool;introducing vapors of said cyclic alkene composition and said silicon containing compound into said carrier gas stream;transporting said vapors of said cyclic alkene composition and said silicon containing compound into said film deposition chamber via the carrier gas stream; andforming the layer of the carbon-doped silicon oxide on the substrate, wherein said cyclic alkene composition further comprisesa stabilizer compound selected form the group consisting of: phenol, 4-methylphenol, 3-methylphenol, 2-methylphenol, 4-ethylphenol, 4-propylphenol, 4-iso-propylphenol, 4-butylphenol, 4-sec-butylphenol, 4-iso-butylphenol, 4-tertbutylphenol, 4-methoxyphenol, 3-methoxyphenol, 2-methoxyphenol, 4-ethoxyphenol, 2(1-methylbutyl)phenol, 2-tert-butyl-6-methylphenol, 1,2- dihydroxybenzene, 2,4-di-tert-butylphenol, 2,6-di-tert-butyl-4-methylphenol (BHT), 1,3-dihydroxybenzene, hydroquinone, 2-(benzyloxy)phenol, 3,4,5-trimethoxyphenol, 3-ethoxy-4-methylphenol, 4-benzyloxyphenol, 4-benzy1-2,6-di-tert-butylphenol, 2-(2-butenyl)phenol, 4-propoxyphenol, 4-butoxyphenol, 2-(4-methylbenzyl)phenol, 2,4,6-tris-benzyloxyphenol, 2,4-dicyclohexy1-5-methylphenol, 6-tert-butyl-1,2-dihydroxybenzene and mixtures thereof, wherein the stabilizer composition is present in a concentration of from 500 ppm up to 10,000 ppm, and wherein said stabilizer compound has a boiling point lower than 265° C. 2. The method of claim 1, wherein said stabilizer compound is 4-methoxyphenol. 3. The method of claim 1 wherein the stabilizer is present in the range of from 1000 to 5000 ppm. 4. The method of claim 1 wherein the stabilizer is present in the range of from 3000 to 5000 ppm.
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