Method for manufacturing semiconductor device
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IPC분류정보
국가/구분
United States(US) Patent
등록
국제특허분류(IPC7판)
H01L-021/00
H01L-021/336
H01L-021/30
출원번호
US-0024360
(2011-02-10)
등록번호
US-8173496
(2012-05-08)
우선권정보
JP-2008-149716 (2008-06-06)
발명자
/ 주소
Kato, Sho
Toriumi, Satoshi
Isaka, Fumito
Ohnuma, Hideto
출원인 / 주소
Semiconductor Energy Laboratory Co., Ltd.
대리인 / 주소
Robinson, Eric J.
인용정보
피인용 횟수 :
0인용 특허 :
16
초록▼
A stack including at least an insulating layer, a first electrode, and a first impurity semiconductor layer is provided over a supporting substrate; a first semiconductor layer to which an impurity element imparting one conductivity type is added is formed over the first impurity semiconductor layer
A stack including at least an insulating layer, a first electrode, and a first impurity semiconductor layer is provided over a supporting substrate; a first semiconductor layer to which an impurity element imparting one conductivity type is added is formed over the first impurity semiconductor layer; a second semiconductor layer to which an impurity element imparting the one conductivity type is added is formed over the first semiconductor layer under a condition different from that of the first semiconductor layer; crystallinity of the first semiconductor layer and crystallinity of the second semiconductor layer are improved by a solid-phase growth method to form a second impurity semiconductor layer; an impurity element imparting the one conductivity type and an impurity element imparting a conductivity type different from the one conductivity type are added to the second impurity semiconductor layer; and a gate electrode layer is formed via a gate insulating layer.
대표청구항▼
1. A method for manufacturing a semiconductor device, comprising: irradiating ions to a single crystal semiconductor substrate in which a first impurity semiconductor layer is formed by adding an impurity of a first element imparting one conductivity type to the single crystal semiconductor substrat
1. A method for manufacturing a semiconductor device, comprising: irradiating ions to a single crystal semiconductor substrate in which a first impurity semiconductor layer is formed by adding an impurity of a first element imparting one conductivity type to the single crystal semiconductor substrate wherein a damaged region is formed in the single crystal semiconductor substrate by the irradiation of the ions;forming an insulating layer over a surface of the single crystal semiconductor substrate;closely attaching the insulating layer and a supporting substrate to each other to bond the single crystal semiconductor substrate and the supporting substrate together;separating the single crystal semiconductor substrate at the damaged region to provide a stack including at least the insulating layer and the first impurity semiconductor layer over the supporting substrate;forming a second semiconductor layer to which an impurity of the first element imparting the one conductivity type is added over the first impurity semiconductor layer;improving crystallinity of the second semiconductor layer by a solid-phase growth method to form a second impurity semiconductor layer;adding an impurity of the first element imparting the one conductivity type to the second impurity semiconductor layer to form a source region and a drain region;adding an impurity of a second element imparting a conductivity type different from the one conductivity type to the second impurity semiconductor layer to form a channel region; andforming a gate electrode layer over the channel region with a gate insulating layer interposed therebetween. 2. A method for manufacturing a semiconductor device, according to claim 1, wherein ions generated using a source gas including hydrogen are used as the ions. 3. A method for manufacturing a semiconductor device, comprising: irradiating ions to a single crystal semiconductor substrate in which a first impurity semiconductor layer is formed by adding an impurity of a first element imparting one conductivity type to the single crystal semiconductor substrate wherein a damaged region is formed in the single crystal semiconductor substrate by the irradiation of the ions;forming an insulating layer over a surface of the single crystal semiconductor substrate;closely attaching the insulating layer and a supporting substrate to each other to bond the single crystal semiconductor substrate and the supporting substrate together;separating the single crystal semiconductor substrate at the damaged region to provide a stack including at least the insulating layer and the first impurity semiconductor layer over the supporting substrate;forming a first semiconductor layer to which an impurity of the first element imparting the one conductivity type is added over the first impurity semiconductor layer;forming a second semiconductor layer to which an impurity of the first element imparting the one conductivity type is added over the first semiconductor layer under a condition different from that of the first semiconductor layer;improving crystallinity of the first semiconductor layer and crystallinity of the second semiconductor layer by a solid-phase growth method to form a second impurity semiconductor layer;adding an impurity of the first element imparting the one conductivity type to the second impurity semiconductor layer to form a source region and a drain region;adding an impurity of a second element imparting a conductivity type different from the one conductivity type to the second impurity semiconductor layer to form a channel region; andforming a gate electrode layer over the channel region with a gate insulating layer interposed therebetween. 4. A method for manufacturing a semiconductor device, according to claim 3, wherein an impurity concentration of the second impurity semiconductor layer is lower than an impurity concentration of the first impurity semiconductor layer. 5. A method for manufacturing a semiconductor device, according to claim 3, wherein the first semiconductor layer is formed so as to have a thickness of greater than or equal to 10 nm and less than or equal to 50 nm and the second semiconductor layer is formed so as to have a thickness of greater than or equal to 300 nm. 6. A method for manufacturing a semiconductor device, according to claim 3, wherein ions generated using a source gas including hydrogen are used as the ions. 7. A method for manufacturing a semiconductor device, according to claim 3, wherein formation of the first semiconductor layer is performed by a plasma chemical vapor deposition method in which a flow rate of a hydrogen gas is greater than or equal to 50 times that of a silane-based gas. 8. A method for manufacturing a semiconductor device, comprising: irradiating ions to a single crystal semiconductor substrate in which a first impurity semiconductor layer is formed by adding an impurity of a first element imparting one conductivity type to the single crystal semiconductor substrate wherein a damaged region is formed in the single crystal semiconductor substrate by the irradiation of the ions;forming an insulating layer over a surface of the single crystal semiconductor substrate;closely attaching the insulating layer and a supporting substrate to each other to bond the single crystal semiconductor substrate and the supporting substrate together;separating the single crystal semiconductor substrate at the damaged region to provide a stack including at least the insulating layer and the first impurity semiconductor layer over the supporting substrate;forming a first semiconductor layer to which an impurity of the first element imparting the one conductivity type is added over the first impurity semiconductor layer;forming a second semiconductor layer to which an impurity of the first element imparting the one conductivity type is added over the first semiconductor layer under a condition different from that of the first semiconductor layer;improving crystallinity of the first semiconductor layer and crystallinity of the second semiconductor layer by a solid-phase growth method to form a second impurity semiconductor layer;adding an impurity of the first element imparting the one conductivity type to the second impurity semiconductor layer to form a source region and a drain region;adding an impurity of a second element imparting a conductivity type different from the one conductivity type to the second impurity semiconductor layer to form a channel region; andforming a gate electrode layer over the channel region with a gate insulating layer interposed therebetween,wherein the first semiconductor layer and the second semiconductor layer are formed so that crystallinity of the first semiconductor layer is higher than that of the second semiconductor layer. 9. A method for manufacturing a semiconductor device, according to claim 8, wherein an impurity concentration of the second impurity semiconductor layer is lower than an impurity concentration of the first impurity semiconductor layer. 10. A method for manufacturing a semiconductor device, according to claim 8, wherein the first semiconductor layer is formed so as to have a thickness of greater than or equal to 10 nm and less than or equal to 50 nm and the second semiconductor layer is formed so as to have a thickness of greater than or equal to 300nm. 11. A method for manufacturing a semiconductor device, according to claim 8, wherein ions generated using a source gas including hydrogen are used as the ions. 12. A method for manufacturing a semiconductor device, according to claim 8, wherein formation of the first semiconductor layer is performed by a plasma chemical vapor deposition method in which a flow rate of a hydrogen gas is greater than or equal to 50 times that of a silane-based gas. 13. A method for manufacturing a semiconductor device, comprising: irradiating ions to a single crystal semiconductor substrate in which a first impurity semiconductor layer is formed by adding an impurity of a first element imparting one conductivity type to the single crystal semiconductor substrate wherein a damaged region is formed in the single crystal semiconductor substrate by the irradiation of the ions;forming an insulating layer over a surface of the single crystal semiconductor substrate;closely attaching the insulating layer and a supporting substrate to each other to bond the single crystal semiconductor substrate and the supporting substrate together;separating the single crystal semiconductor substrate at the damaged region to provide a stack including at least the insulating layer and the first impurity semiconductor layer over the supporting substrate;forming a first semiconductor layer to which an impurity of the first element imparting the one conductivity type is added over the first impurity semiconductor layer;forming a second semiconductor layer to which an impurity of the first element imparting the one conductivity type is added over the first semiconductor layer under a condition different from that of the first semiconductor layer;improving crystallinity of the first semiconductor layer and crystallinity of the second semiconductor layer by a solid-phase growth method to form a second impurity semiconductor layer;adding an impurity of the first element imparting the one conductivity type to the second impurity semiconductor layer to form a source region and a drain region;adding an impurity of a second element imparting a conductivity type different from the one conductivity type to the second impurity semiconductor layer to form a channel region; andforming a gate electrode layer over the channel region with a gate insulating layer interposed therebetween,wherein the first semiconductor layer and the second semiconductor layer are formed so that a hydrogen concentration of the first semiconductor layer is lower than that of the second semiconductor layer. 14. A method for manufacturing a semiconductor device, according to claim 13, wherein an impurity concentration of the second impurity semiconductor layer is lower than an impurity concentration of the first impurity semiconductor layer. 15. A method for manufacturing a semiconductor device, according to claim 13, wherein the first semiconductor layer is formed so as to have a thickness of greater than or equal to 10 nm and less than or equal to 50 nm and the second semiconductor layer is formed so as to have a thickness of greater than or equal to 300nm. 16. A method for manufacturing a semiconductor device, according to claim 13, wherein ions generated using a source gas including hydrogen are used as the ions. 17. A method for manufacturing a semiconductor device, according to claim 13, wherein formation of the first semiconductor layer is performed by a plasma chemical vapor deposition method in which a flow rate of a hydrogen gas is greater than or equal to 50 times that of a silane-based gas.
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